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1.
Electron-electron scattering in quantum wires and its possible suppression due to spin effects.
Fasol G; Sakaki H.
Phys Rev Lett ; 70(23): 3643-3646, 1993 Jun 07.
Article in English | MEDLINE | ID: mdl-10053926
2.
Vibrational properties of Si/Ge superlattices incorporating biatomic sheets of silicon and germanium.
White JD; Fasol G; Ghanbari RA; Gell MA; Gibbings CJ; Tuppen CG.
Phys Rev B Condens Matter ; 43(2): 1685-1691, 1991 Jan 15.
Article in English | MEDLINE | ID: mdl-9997419
3.
Phonon frequencies for Si-Ge strained-layer superlattices calculated in a three-dimensional model.
Ghanbari RA; White JD; Fasol G; Gibbings CJ; Tuppen CG.
Phys Rev B Condens Matter ; 42(11): 7033-7041, 1990 Oct 15.
Article in English | MEDLINE | ID: mdl-9994827
4.
Continuous-wave spectroscopy of femtosecond carrier scattering in GaAs.
Fasol G; Hackenberg W; Hughes HP; Ploog K; Bauser E; Kano H.
Phys Rev B Condens Matter ; 41(3): 1461-1478, 1990 Jan 15.
Article in English | MEDLINE | ID: mdl-9993863
5.
Intrawell and interwell coupling of plasmons in multilayer modulation-doped GaAs/AlxGa1-xAs quantum wells.
Fasol G; King-Smith RD; Richards D; Ekenberg U; Mestres N; Ploog K.
Phys Rev B Condens Matter ; 39(17): 12695-12703, 1989 Jun 15.
Article in English | MEDLINE | ID: mdl-9948139
6.
Interface roughness and the dispersion of confined LO phonons in GaAs/AlAs quantum wells.
Fasol G; Tanaka M; Sakaki H; Horikoshi Y.
Phys Rev B Condens Matter ; 38(9): 6056-6065, 1988 Sep 15.
Article in English | MEDLINE | ID: mdl-9947064
7.
Relativistic band structure and spin-orbit splitting of zinc-blende-type semiconductors.
Cardona M; Christensen NE; Fasol G.
Phys Rev B Condens Matter ; 38(3): 1806-1827, 1988 Jul 15.
Article in English | MEDLINE | ID: mdl-9946466
8.
Conduction-band nonparabolicity in p-type quantum wells and Fourier determination of the hole wave functions by resonant Raman scattering.
Suemoto T; Fasol G; Ploog K.
Phys Rev B Condens Matter ; 37(11): 6397-6405, 1988 Apr 15.
Article in English | MEDLINE | ID: mdl-9943882
9.
Determination of single-particle relaxation time from light scattering spectra in modulation-doped quantum wells.
Fasol G; Mestres N; Dobers M; Fischer A; Ploog K.
Phys Rev B Condens Matter ; 36(3): 1565-1569, 1987 Jul 15.
Article in English | MEDLINE | ID: mdl-9942988
10.
Resonant Raman scattering in p-type GaAs-AlxGa1-xAs-AlAs quantum wells.
Suemoto T; Fasol G; Ploog K.
Phys Rev B Condens Matter ; 34(8): 6034-6037, 1986 Oct 15.
Article in English | MEDLINE | ID: mdl-9940472
11.
Raman scattering by coupled layer plasmons and in-plane two-dimensional single-particle excitations in multi-quantum-well structures.
Fasol G; Mestres N; Hughes HP; Fischer A; Ploog K.
Phys Rev Lett ; 56(23): 2517-2520, 1986 Jun 09.
Article in English | MEDLINE | ID: mdl-10033013
12.
Terms linear in k in the band structure of zinc-blende-type semiconductors.
Cardona M; Christensen NE; Fasol G.
Phys Rev Lett ; 56(26): 2831-2833, 1986 Jun 30.
Article in English | MEDLINE | ID: mdl-10033106
13.
Band-structure determination of GaAs from hot-electron luminescence.
Fasol G; Hughes HP.
Phys Rev B Condens Matter ; 33(4): 2953-2956, 1986 Feb 15.
Article in English | MEDLINE | ID: mdl-9938667
14.
New hydrostatic pressure cell to 90 kilobars for precise electrical and magnetic measurements at low temperatures.
Fasol, G; Schilling, J S.
Rev Sci Instrum ; 49(12): 1722, 1978 Dec.
Article in English | MEDLINE | ID: mdl-18699043

ABSTRACT

A new type of hydrostatic pressure cell is discussed. It is suitable for precise electrical and magnetic measurements on several samples simultaneously over a wide range of temperature and pressure. Pressures as high as 90 kilobars have thus far been reached in a four-point electrical resistivity measurement. These studies indicate minimal pressure changes upon cooling from 300 to 1 K, good pressure homogeneity, and absence of significant shear stresses.

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