Phosphorus Catalytic Doping on Intrinsic Silicon Thin Films for the Application in Silicon Heterojunction Solar Cells.

Parasitic absorption and limited fill factor (FF) brought in by the use of amorphous silicon layers are efficiency-limiting challenges for the silicon heterojunction (SHJ) solar cells. In this work, postdeposition phosphorus (P) catalytic doping (Cat-doping) on intrinsic amorphous silicon (a-Si:H(i)) at a low substrate temperature was carried out and a P concentration of up to 6 × 1021 cm-3 was reached. The influences of filament temperature, substrate temperature, and processing pressure on the P profiles were systemically studied by secondary-ion mass spectrometry. By replacing the a-Si:H(n+er with P Cat-doping of an a-Si:H(i) layer, the passivation quality was improved, reaching an iVOC of 741 mV, while the parasitic absorption was reduced, leading to an increase in JSC by ∼1 mA/cm2. On the other hand, the open-circuit voltage and the FF of a conventional SHJ solar cell (with the a-Si:H(n) layer) can be improved by adding a Cat-doping process on the a-Si:H(i) layer, resulting in an increase in FF by 4.7%abs and in efficiency by 1.5%abs.

Development of Conductive SiCx:H as a New Hydrogenation Technique for Tunnel Oxide Passivating Contacts.

Conductive hydrogenated silicon carbide (SiCx:H) is discovered as a promising hydrogenation material for tunnel oxide passivating contacts (TOPCon) solar cells. The proposed SiCx:H layer enables a good passivation quality and features a good electrical conductivity, which eliminates the need of etching back of SiNx:H and indium tin oxide (ITO)/Ag deposition for metallization and reduces the number of process steps. The SiCx:H is deposited by hot wire chemical vapor deposition (HWCVD) and the filament temperature (Tf) during deposition is systematically investigated. Via tuning the SiCx:H layer, implied open-circuit voltages (iVoc) up to 742 ± 0.5 mV and a contact resistivity (ρc) of 21.1 ± 5.4 mΩ·cm2 is achieved using SiCx:H on top of poly-Si(n)/SiOx/c-Si(n) stack at Tf of 2000 °C. Electrochemical capacitance-voltage (ECV) and secondary ion mass spectrometry (SIMS) measurements were conducted to investigate the passivation mechanism. Results show that the hydrogenation at the SiOx/c-Si(n) interface is responsible for the high passivation quality. To assess its validity, the TOPCon stack was incorporated as rear electron selective-contact in a proof-of-concept n-type solar cells featuring ITO/a-Si:H(p)/a-Si:H(i) as front hole selective-contact, which demonstrates a conversion efficiency up to 21.4%, a noticeable open-circuit voltage (Voc) of 724 mV and a fill factor (FF) of 80%.

In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/min.

Hot-wire chemical vapor deposition was used to deposit in situ-doped amorphous silicon layers for poly-Si/SiOx passivating contacts at a high deposition rate of 42 nm/min. We investigated the influence of a varied phosphine gas (PH3) concentration during deposition on (i) the silicon film properties and (ii) the passivating contact performances. The microstructural film properties were characterized before and after a high-temperature crystallization step to transform amorphous silicon films into polycrystalline silicon films. Before crystallization, the silicon layers become less dense as the PH3 concentrations increase. After crystallization, an increasing domain size is derived for higher PH3 concentrations. Sheet resistance is found to decrease as domain size increased, and the correlation between mobility and domain size was discussed. The performances of the passivating contact were measured, and a firing stable open circuit voltage of 732 mV, a contact resistivity of 8.1 mΩ·cm2, and a sheet resistance of 142 Ω/□ could be achieved with the optimized PH3 concentration. In addition, phosphorous doping tails into the crystalline silicon were extracted to evaluate the Auger recombination of the passivating contact.

Multilayered Hematite Nanowires with Thin-Film Silicon Photovoltaics in an All-Earth-Abundant Hybrid Tandem Device for Solar Water Splitting.

The concept of hybrid tandem device structures that combine metal oxides with thin-film semiconducting photoabsorbers holds great promise for large-scale, robust, and cost-effective bias-free photoelectrochemical water splitting (PEC-WS). This work highlights important steps toward the efficient coupling of high-performance hematite photoanodes with multijunction thin-film silicon photocathodes providing high bias-free photocurrent density. The hybrid PEC-WS device is optimized by testing three types of multijunction silicon photocathodes with the hematite photoanode: amorphous silicon (a-Si:H) tandem: a-Si:H/a-Si:H and triple junction with microcrystalline silicon (µc-Si:H): a-Si:H/a-Si:H/µc-Si:H and a-Si:H/µc-Si:H/µc-Si:H. The results provide evidence that the multijunction structures offer high flexibility for hybrid tandem devices with regard to tunable photovoltages and spectral matching. Furthermore, both photoanode and photocathode are tested under various electrolyte and light concentration conditions, respectively, with respect to their photoelectrochemical performance and stability. A 27 % enhancement in the solar-to-hydrogen conversion efficiency is observed upon concentrating light from 100 to 300 mW cm-2 . Ultimately, bias-free water splitting is demonstrated, with a photocurrent density of 4.6 mA cm-2 (under concentrated illumination) paired with excellent operation stability for more than 24 h of the all-earth-abundant and low-cost hematite/silicon tandem PEC-WS device.

Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (µc-SiC:H(n)), silicon tunnel oxide (SiO2) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the µc-SiC:H(n)/SiO2/c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO2, in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm2 were achieved using µc-SiC:H(n)/SiO2/c-Si as transparent passivated contacts.

Upscaling of integrated photoelectrochemical water-splitting devices to large areas.

Photoelectrochemical water splitting promises both sustainable energy generation and energy storage in the form of hydrogen. However, the realization of this vision requires laboratory experiments to be engineered into a large-scale technology. Up to now only few concepts for scalable devices have been proposed or realized. Here we introduce and realize a concept which, by design, is scalable to large areas and is compatible with multiple thin-film photovoltaic technologies. The scalability is achieved by continuous repetition of a base unit created by laser processing. The concept allows for independent optimization of photovoltaic and electrochemical part. We demonstrate a fully integrated, wireless device with stable and bias-free operation for 40 h. Furthermore, the concept is scaled to a device area of 64 cm(2) comprising 13 base units exhibiting a solar-to-hydrogen efficiency of 3.9%. The concept and its successful realization may be an important contribution towards the large-scale application of artificial photosynthesis.

Band engineering for efficient catalyst-substrate coupling for photoelectrochemical water splitting.

To achieve an overall efficient solar water splitting device, not only the efficiencies of photo-converter and catalyst are decisive, but also their appropriate coupling must be considered. In this report we explore the origin of a voltage loss occurring at the interface between a thin film amorphous silicon tandem cell and the TiO2 corrosion protection layer by means of XPS. We find that the overall device can be disassembled into its primary constituents and that they can be analyzed separately, giving insight into the device structure as a whole. Thus, a series of model experiments were conducted, each representing a part of the complete device. We finally arrive at the conclusion, that the formation of a SiO2 interfacial layer between the TiO2 protection layer and the silicon cell gives rise to the voltage loss observed for the whole device.

Impact of Light-Induced Degradation on the Performance of Multijunction Thin-Film Silicon-Based Photoelectrochemical Water-Splitting Devices.

The impact of light-induced degradation (LID) of silicon photoelectrodes on the solar-to-hydrogen efficiency of photoelectrochemical (PEC) devices is investigated. To evaluate the effect, stabilized state-of-the-art thin-film silicon solar cells (after 1000 h of light soaking) were used as photocathodes in photovoltaic-electrochemical (PV-EC) device assemblies and their performances were compared to the performances of the initial solar-cell-based PV-EC devices. A wide range of photoelectrode configurations (tandem, triple, quadruple) was addressed. With regard to the widespread use of multijunction-based photoelectrodes in the literature, the results presented herein will have a high impact and may serve as guidelines for the design of photovoltaic devices particularly tailored for PEC applications, with high stabilities and efficiencies. It is shown that LID affects the performances of PV and PV-EC devices in different ways and strongly depends on the photovoltage of the applied solar cell.

Photoelectrochemical and photovoltaic characteristics of amorphous-silicon-based tandem cells as photocathodes for water splitting.

In this study amorphous silicon tandem solar cells are successfully utilized as photoelectrodes in a photoelectrochemical cell for water electrolysis. The tandem cells are modified with various amounts of platinum and are combined with a ruthenium oxide counter electrode. In a two-electrode arrangement this system is capable of splitting water without external bias with a short-circuit current of 4.50 mA cm(-2). On the assumption that no faradaic losses occur, a solar-to-hydrogen efficiency of 5.54% is achieved. In order to identify the relevant loss processes, additional three-electrode measurements were performed for each involved half-cell.

The electrically detected magnetic resonance microscope: combining conductive atomic force microscopy with electrically detected magnetic resonance.

We present the design and implementation of a scanning probe microscope, which combines electrically detected magnetic resonance (EDMR) and (photo-)conductive atomic force microscopy ((p)cAFM). The integration of a 3-loop 2-gap X-band microwave resonator into an AFM allows the use of conductive AFM tips as a movable contact for EDMR experiments. The optical readout of the AFM cantilever is based on an infrared laser to avoid disturbances of current measurements by absorption of straylight of the detection laser. Using amorphous silicon thin film samples with varying defect densities, the capability to detect a spatial EDMR contrast is demonstrated. Resonant current changes as low as 20 fA can be detected, allowing the method to realize a spin sensitivity of 8×10(6)spins/√Hz at room temperature.