ABSTRACT
For several years, scientists have been trying to understand the mechanisms that reduce the long-term stability of perovskite solar cells. In this work, we examined the effect of water and photon flux on the stability of CH3 NH3 PbI3 perovskite films and solar cells using inâ situ near-ambient pressure X-ray photoelectron spectroscopy (NAP-XPS), field emission scanning electron microscopy (FESEM), and current density-voltage (J-V) characterization. The used amount of water vapor (up to 1â mbar) had a negligible impact on the perovskite film. The higher the photon flux, the more prominent were the changes in the NAP-XPS and FESEM data; also, a faster decline in power conversion efficiency (PCE) and a more substantial hysteresis in the J-V characteristics were observed. Based on our results, it can be concluded that the PCE decrease originates from the creation of Frenkel pair defects in the perovskite film under illumination. The stronger the illumination, the higher the number of Frenkel defects, leading to a faster PCE decline and more substantial hysteresis in the J-V sweeps.
ABSTRACT
The complex structure and morphology of ultrathin praseodymia films deposited on a ruthenium(0001) single crystal substrate by reactive molecular beam epitaxy is analyzed by intensity-voltage low-energy electron microscopy in combination with theoretical calculations within an ab initio scattering theory. A rich coexistence of various nanoscale crystalline surface structures is identified for the as-grown samples, notably comprising two distinct oxygen-terminated hexagonal Pr2O3(0001) surface phases as well as a cubic Pr2O3(111) and a fluorite PrO2(111) surface component. Furthermore, scattering theory reveals a striking similarity between the electron reflectivity spectra of praseodymia and ceria due to very efficient screening of the nuclear charge by the extra 4f electron in the former case.
ABSTRACT
The growth of 3, 4, 9, 10-perylene tetracarboxylic dianhydride (PTCDA) on the Ga-polar GaN(0 0 0 1) surface has been studied by x-ray photoelectron spectroscopy (XPS), spot profile analysis low-energy electron diffraction (SPA-LEED), near edge x-ray absorption fine structure (NEXAFS), and scanning tunneling microscopy (STM). The stoichiometric ratios derived from XPS indicate that the molecules remain intact upon adsorption on the surface. Furthermore, no chemical shifts can be observed in the C 1s and O 1s core levels with progressing deposition of PTCDA, suggesting none or only weak interactions between the molecules and the substrate. NEXAFS data indicate the PTCDA molecules being oriented with their molecular plane parallel to the surface. High-resolution STM shows PTCDA islands of irregular shape on the sub-micron scale, and together with corresponding SPA-LEED data reveals a lateral ordering of the molecules that is compatible with the presence of (1 0 2) oriented PTCDA nano-crystals. SPA-LEED moreover clearly shows the presence of homogeneously distributed rotational domains of two-dimensionally isotropic PTCDA.
ABSTRACT
The reactive growth of cobalt germanide on Ge(001) was investigated by means of in situ x-ray absorption spectroscopy photoemission electron microscopy (XAS-PEEM), micro-illumination low-energy electron diffraction (µ-LEED), and ex situ atomic force microscopy (AFM). At a Co deposition temperature of 670 °C, a rich morphology with different island shapes and dimensions is observed, and a correlation between island morphology and stoichiometry is found. By combining XAS-PEEM and µ-LEED, we were able to identify a large part of the islands to consist of CoGe2, with many of them having an unusual epitaxial relationship: CoGe2 [Formula: see text] [Formula: see text] Ge [Formula: see text]. Side facets with (112) and (113) orientation have been found for such islands. However, two additional phases were observed, most likely Co5Ge7 and CoGe. Comparing growth on Ge(001) single crystals and on Ge(001)/Si(001) epilayer substrates, the occurrence of these intermediate phases seems to be promoted by defects or residual strain.
ABSTRACT
Electron scattering by oxygen monolayers on the Ru(0 0 0 1) surface is studied both experimentally and theoretically. Sharp transmission resonances at low energies are revealed and established to originate from critical points of a special kind in the complex band structure of the substrate. Electron reflection from the clean and oxidized Ru(0 0 0 1) is measured for kinetic energies up to 40 eV at normal incidence for oxygen coverages of 1/4, 1/2, 3/4, and one monolayer. The reflection spectra R(E) are analyzed using a Bloch-waves based ab initio scattering theory. In addition to the substrate-induced resonances the reconstructed (2 × 1) and (2 × 2) surfaces show surface resonances due to pre-emergent secondary diffraction beams. The R(E) spectra are shown to give unambiguous evidence of the hcp stacking of the oxygen layer.
ABSTRACT
The growth of cerium oxide on Ru(0001) by reactive molecular beam epitaxy has been investigated using low-energy electron microscopy (LEEM) and diffraction as well as local valence band photoemission. The oxide islands are found to adopt a carpet-like growth mode, which depending on the local substrate morphology and misorientation leads to deviations from the otherwise almost perfect equilateral shape at a growth temperature of 850 °C. Furthermore, although even at this high growth temperature the micron-sized CeO2(111) islands are found to exhibit different lattice registries with respect to the hexagonal substrate, the combination of dark-field LEEM and local intensity-voltage analysis reveals that the oxidation state of the islands is homogeneous down to the 10 nm scale.
ABSTRACT
The pre-adsorption of Ga on Si(112) leads to a drastic change of the morphology of subsequently grown Ge islands. In contrast to the case for Ge growth on bare Si(112), even nanowire growth can be achieved on Ga terminated Si(112). Employing low energy electron microscopy and low energy electron diffraction, the initial phase of Ge nucleation and Ge island growth was systematically analysed for growth temperatures between 420 and 610 °C, both on clean and on Ga terminated Si(112). In both cases the island density exhibits an Arrhenius-like behaviour, from which diffusion barrier heights of about 1.3 and 1.0 eV can be estimated for growth with and without Ga pre-adsorption, respectively. The Ge island shape on the bare Si(112) surface is found to be nearly circular over the whole temperature range, whereas the shapes of the Ge islands on the Ga terminated Si(112) become highly anisotropic for higher temperatures. Ge nanowires with sizes of up to 2 µm along the [Formula: see text] direction are observed.
ABSTRACT
CO oxidation over oxygen-rich Ru(0001) surfaces is one of the most studied catalytic oxidation reactions in surface science and of widespread interest as a model system for the redox chemistry of transition metal model catalysts. Here, we present an extensive low-energy electron microscopy (LEEM) and photoemission electron microscopy study of the oxidation of Ru(0001), which constitutes a crucial step in understanding the overall surface reaction. After characterizing the different surface nanoscale morphologies observed depending on the oxidation temperature, three distinct oxygen-rich phases are identified by dark-field microscopy and local valence-band spectroscopy. Furthermore, in situ LEEM allows us to follow the growth of single rutile oxide nuclei in real time and determine the relevant activation barriers that induce quasi-one-dimensional growth of oxide nanorods, whose growth rate is limited by O incorporation.
ABSTRACT
Liquid eutectic Pt-Si droplets, migrating across a Si(100) surface due to an applied temperature gradient, interact measurably with surface steps. An analysis of the interaction yields a critical size of hundreds of nanometers below which droplets are constrained to move parallel to monolayer steps. Bunches of closely spaced steps are capable of guiding larger, micron-sized droplets. This steering by steps or step bunches may be used for the controlled manipulation of liquid droplets on patterned surfaces, and affects fundamental surface processes such as coarsening.
ABSTRACT
A novel mechanism is described which enables the selective formation of three-dimensional Ge islands. Submonolayer adsorption of Ga on Si(111) at high temperature leads to a self-organized two-dimensional pattern formation by separation of the 7 x 7 substrate and Ga/Si(111)-(square root[3] x square root[3])-R30 degrees domains. The latter evolve at step edges and domain boundaries of the initial substrate reconstruction. Subsequent Ge deposition results in the growth of 3D islands which are aligned at the boundaries between bare and Ga-covered domains. This result is explained in terms of preferential nucleation conditions due to a modulation of the surface chemical potential.
ABSTRACT
The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.
