Fabrication and Characterization of Dielectric ZnCr2O4 Nanopowders and Thin Films for Parallel-Plate Capacitor Applications.

We report here the successful shape-controlled synthesis of dielectric spinel-type ZnCr2O4 nanoparticles by using a simple sol-gel auto-combustion method followed by successive heat treatment steps of the resulting powders at temperatures from 500 to 900 °C and from 5 to 11 h, in air. A systematic study of the dependence of the morphology of the nanoparticles on the annealing time and temperature was performed by using field effect scanning electron microscopy (FE-SEM), powder X-ray diffraction (PXRD) and structure refinement by the Rietveld method, dynamic lattice analysis and broadband dielectric spectrometry, respectively. It was observed for the first time that when the aerobic post-synthesis heat treatment temperature increases progressively from 500 to 900 °C, the ZnCr2O4 nanoparticles: (i) increase in size from 10 to 350 nm and (ii) develop well-defined facets, changing their shape from shapeless to truncated octahedrons and eventually pseudo-octahedra. The samples were found to exhibit high dielectric constant values and low dielectric losses with the best dielectric performance characteristics displayed by the 350 nm pseudo-octahedral nanoparticles whose permittivity reaches a value of ε = 1500 and a dielectric loss tan δ = 5 × 10-4 at a frequency of 1 Hz. Nanoparticulate ZnCr2O4-based thin films with a thickness varying from 0.5 to 2 µm were fabricated by the drop-casting method and subsequently incorporated into planar capacitors whose dielectric performance was characterized. This study undoubtedly shows that the dielectric properties of nanostructured zinc chromite powders can be engineered by the rational control of their morphology upon the variation of the post-synthesis heat treatment process.

Manifestation of Anomalous Weak Space-Charge-Density Acentricity for a Tl4HgBr6 Single Crystal.

Density functional theory (DFT) calculations within the concept of the MBJ+U+SO (modified Becke-Johnson potential + U + spin orbit) approach were performed for a Tl4HgBr6 single crystal for the first time assuming weak noncentrosymmetry (space group P4nc). Excellent agreement was achieved between the calculated and experimental band-gap-energy magnitudes as well as the density of electronic states measured by the X-ray photoelectron spectroscopy method. It is a very principal result because usually the DFT calculations underestimate the energy-gap values. In the present study, we carry out calculations of the optical properties (absorption coefficient, real and imaginary parts of the dielectric function, electron energy-loss spectrum, refractive index, extinction coefficient, and optical reflectivity dispersions). It has been established that the principal origin of the observed weak acentricity is determined by delocalized band states at the top of the valence band originating from the p states of the Br atoms.

Influence of the Shell Thickness and Ratio Between Core Elements on Photostability of the CdTe/CdS Core/Shell Quantum Dots Embedded in a Polymer Matrix.

This paper reports a study of photooxidation and photomodification processes of the CdTe/CdS quantum dots embedded in a polymer matrix under ambient condition. During the first few minutes of irradiation, the quasi-inverse increase in photoluminescence intensity has been observed indicating the passivation of the nanocrystal surface traps by water molecules. A prolonged irradiation of the polymer film containing CdTe/CdS quantum dots leads to a significant decrease in the photoluminescence intensity together with the "blue shift" of the photoluminescence peak energy associated with quantum dot photooxidation. The mechanisms of the CdTe/CdS core/shell quantum dot photooxidation and photomodification in a polymer matrix are discussed. We have found a correlation between the photostability of the quantum dots and the CdS shell thickness as well as the ratio of core elements.

Local and electronic structure around Ga in CdTe: evidence of DX- and A-centers.

The lattice relaxation around Ga in CdTe is investigated by means of extended X-ray absorption spectroscopy (EXAFS) and density functional theory (DFT) calculations using the linear augmented plane waves plus local orbitals (LAPW+lo) method. In addition to the substitutional position, the calculations are performed for DX- and A-centers of Ga in CdTe. The results of the calculations are in good agreement with the experimental data, as obtained from EXAFS and X-ray absorption near-edge structure (XANES). They allow the experimental identification of several defect structures in CdTe. In particular, direct experimental evidence for the existence of DX-centers in CdTe is provided, and for the first time the local bond lengths of this defect are measured directly.