Mechanical constraint and release generates long, ordered horizontal pores in anodic alumina templates.

We describe the formation of long, highly ordered arrays of planar oriented anodic aluminum oxide (AAO) pores during plane parallel anodization of thin aluminum 'finger' microstructures fabricated on thermally oxidized silicon substrates and capped with a silicon oxide layer. The pore morphology was found to be strongly influenced by mechanical constraint imposed by the oxide layers surrounding the Al fingers. Tractions induced by the SiO(2) substrate and capping layer led to frustrated volume expansion and restricted oxide flow along the interface, with extrusion of oxide into the primary pore volume, leading to the formation of dendritic pore structures and meandering pore growth. However, partial relief of the constraint by a delaminating interfacial fracture, with its tip closely following the anodization front, led to pore growth that was highly ordered with regular, hexagonally packed arrays of straight horizontal pores up to 3 µm long. Detailed characterization of both straight and dendritic planar pores over a range of formation conditions using advanced microscopy techniques is reported, including volume reconstruction, enabling high quality 3D visualization of pore formation.

Adsorption hysteresis in self-ordered nanoporous alumina.

We performed systematic adsorption studies using self-ordered nanoporous anodic aluminum oxide (AAO) in an extended range of mean pore diameters and with different pore topologies. These matrices were characterized by straight cylindrical pores having a narrow pore size distribution and no interconnections. Pronounced hysteresis loops between adsorption and desorption cycles were observed even in the case of pores closed at one end. These results are in contrast with macroscopic theoretical models and detailed numerical simulations of the adsorption in a single pore. Extensive measurements involving adsorption isotherms, reversal curves, and subloops carried out in closed-bottom pores suggest that the pores do not desorb independently from one another.

Wetting properties of flat and porous silicon surfaces coated with a spiropyran.

We report the immobilization and characterization of a spiropyran (SP) derivative (1) on smooth Si(100) and porous H-terminated silicon surfaces through a thermal hydrosilylation protocol. Under visible light exposure the SP is in a closed, hydrophobic form, whereas under UV irradiation it converts to a polar, hydrophilic open form named merocyanine (MC). The SP-MC photoinduced isomerization gives a small contact angle (CA) change of 9 degrees for smooth Si(100) samples under sequential irradiation cycles with white and UV light. Irradiation of porous silicon (PS) surfaces, under the same conditions, gave a CA change of 11 degrees. Treatment of PS surfaces, bearing the MC form of chromophore 1, with cobalt(II) ions enhances the wettability switching of the PS surface to a much larger extent, giving rise to a CA variation as high as 32 degrees.

Wetting behavior of porous silicon surfaces functionalized with a fulleropyrrolidine.

We report the immobilization of a fulleropyrrolidine, bearing a dec-9-ynyl functionality, on silicon surfaces through a thermal hydrosilylation protocol. Contact angle measurements on porous silicon (PS) surfaces reveal an unusual dependence of the angle with the PS roughness that apparently contradicts Wenzel's formula. This result has been explained by an extension of Wenzel's model in which the critical angle, which discriminates between the hydrophilic/hydrophobic character of a solid material, is substantially reduced below 90 degrees by surface roughness.

Complete wetting of curved microscopic channels.

We have measured the adsorption of argon films on arrays of microscopic nonlinear cusps and of semicircular channels. In the former case, we observe a distinct crossover from a planarlike to a geometry dependent growth behavior near liquid-vapor bulk coexistence, characterized by a growth exponent chi equal to -0.96+/-0.04 in very good agreement with the predictions of a recent scaling theory [C. Rascon and A. O. Parry, J. Chem. Phys. 112, 5175 (2000)]. The crossover location is also consistent with theory. Instead, on the concave channels we find a much steeper growth near saturation that may signal the formation of two menisci at both sides of the channel bottom.