Nonvolatile Isomorphic Valence Transition in SmTe Films.

The burgeoning field of optoelectronic devices necessitates a mechanism that gives rise to a large contrast in the electrical and optical properties. A SmTe film with a NaCl-type structure demonstrates significant differences in resistivity (over 105) and band gap (approximately 1.45 eV) between as-deposited and annealed films, even in the absence of a structural transition. The change in the electronic structure and accompanying physical properties is attributed to a rigid-band shift triggered by a valence transition (VT) between Sm2+ and Sm3+. The stress field within the SmTe film appears closely tied to the mixed valence state of Sm, suggesting that stress is a driving force in this VT. By mixing the valence states, the formation energy of the low-resistive state decreases, providing nonvolatility. Moreover, the valence state of Sm can be regulated through annealing and device-operation processes, such as applying voltage and current pulses. This investigation introduces an approach to developing semiconductor materials for optoelectrical applications.

Lithium-Induced Reorientation of Few-Layer MoS2 Films.

Molybdenum disulfide (MoS2) few-layer films have gained considerable attention for their possible applications in electronics and optics and also as a promising material for energy conversion and storage. Intercalating alkali metals, such as lithium, offers the opportunity to engineer the electronic properties of MoS2. However, the influence of lithium on the growth of MoS2 layers has not been fully explored. Here, we have studied how lithium affects the structural and optical properties of the MoS2 few-layer films prepared using a new method based on one-zone sulfurization with Li2S as a source of lithium. This method enables incorporation of Li into octahedral and tetrahedral sites of the already prepared MoS2 films or during MoS2 formation. Our results discover an important effect of lithium promoting the epitaxial growth and horizontal alignment of the films. Moreover, we have observed a vertical-to-horizontal reorientation in vertically aligned MoS2 films upon lithiation. The measurements show long-term stability and preserved chemical composition of the horizontally aligned Li-doped MoS2.

Lithium-Doping Effects in Cu(In,Ga)Se2 Thin-Film and Photovoltaic Properties.

The beneficial effects of heavy alkali metals such as K, Rb, and Cs in enhancing Cu(In,Ga)Se2 (CIGS) photovoltaic efficiencies are widely known, though the detailed mechanism is still open for discussion. In the present work, the effects of the lightest alkali metal, Li, on CIGS thin-film and device properties are focused upon and compared to the effects of heavy alkali metals. Till date, the beneficial effects of elemental Li on Cu2ZnSnS4 photovoltaic devices in enhancing efficiencies have been reported. On the other hand, it is shown in the present work that the beneficial effects of Li on CIGS are not so significant. In contrast to the effects of Na or Rb in enhancing CIGS(112) growth orientation, Li was revealed not to affect CIGS growth orientation. The most distinctive feature observed between Li and other alkali metals was the elemental depth profile in CIGS films. Namely, Na and heavier alkali metals show a concentration peak near the surface (relatively Cu-poor) region of CIGS films, whereas elemental Li showed no such trend, suggesting that Li has no significant effect on CIGS surface modification. Nonetheless, Li was found to have some effect in enhancing the PL peak intensity and photovoltaic performance of CIGS, though the effect is relatively small in comparison to that obtained with other alkali metals.

Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices.

Multiferroics, materials in which both magnetic and electric fields can induce each other, resulting in a magnetoelectric response, have been attracting increasing attention, although the induced magnetic susceptibility and dielectric constant are usually small and have typically been reported for low temperatures. The magnetoelectric response usually depends on d-electrons of transition metals. Here we report that in [(GeTe)2(Sb2Te3) l ] m superlattice films (where l and m are integers) with topological phase transition, strong magnetoelectric response may be induced at temperatures above room temperature when the external fields are applied normal to the film surface. By ab initio computer simulations, it is revealed that the multiferroic properties are induced due to the breaking of spatial inversion symmetry when the p-electrons of Ge atoms change their bonding geometry from octahedral to tetrahedral. Finally, we demonstrate the existence in such structures of spin memory, which paves the way for a future hybrid device combining nonvolatile phase-change memory and magnetic spin memory.

Interfacial alkali diffusion control in chalcopyrite thin-film solar cells.

Alkali elements, specifically sodium (Na), are key materials to enhance the energy conversion efficiencies of chalcopyrite and related thin-film photovoltaic solar cells. Recently, the effect of potassium (K) has also attracted attention because elemental K has unique effects different from Na as well as a similar beneficial effect in improving device performance. In this study, the control of selective alkali K and Na diffusion into chalcopyrite thin-films from soda-lime glass substrates, which serve as the monolithic alkali source material and contain both K and Na, is demonstrated using ternary CuGaSe2. Elemental K is found to be incorporated in the several ten nanometer thick Cu-deficient region, which is formed on the CuGaSe2 film surface, while Na is ejected, although both K and Na diffuse from the substrate to the CuGaSe2 film surface during growth. The alkali [K]/[Na] concentration ratio in the surface region of CuGaSe2 films strongly depends on the film structure and can be controlled by growth parameters under the same substrate temperature conditions. The results we present here offer new concepts necessary to explore and develop emerging new chalcopyrite and related materials and optimize their applications.