ABSTRACT
We demonstrate strong exciton-photon coupling of Frenkel excitons at room temperature in a microcavity composed of a melt grown thin film anthracene single crystal and two distributed Bragg reflectors. Angle-resolved reflectivity and normal incidence photoluminescence under weak excitation are observed. The microcavity spectrum is a function of the anisotropy of the crystalline material and the strong exciton-photon coupling of the excitonic resonances to the cavity photon. The photoluminescence spectrum is found to be completely polarized along the crystal axes.
ABSTRACT
We demonstrate strong exciton-photon coupling in an optical microcavity containing a thermally evaporated polycrystalline organic thin film. Microcavity polaritons result from coupling between the 0-0 excitonic transition of 3,4,7,8 napthalenetetracarboxylic dianhydride and a cavity photon. For thicker films, the 0-1 transition also couples to the cavity mode, as vibronic relaxation is overcome by the short Rabi period for strong coupling. To our knowledge, this is the first report of strong coupling between a cavity photon and multiple vibronic transitions in a single material, made possible by the pronounced vibronic absorption features characteristic of crystalline organic materials.
ABSTRACT
The synthesis and photophysical study of a family of cyclometalated iridium(III) complexes are reported. The iridium complexes have two cyclometalated (C(**)N) ligands and a single monoanionic, bidentate ancillary ligand (LX), i.e., C(**)N2Ir(LX). The C(**)N ligands can be any of a wide variety of organometallic ligands. The LX ligands used for this study were all beta-diketonates, with the major emphasis placed on acetylacetonate (acac) complexes. The majority of the C(**)N2Ir(acac) complexes phosphoresce with high quantum efficiencies (solution quantum yields, 0.1-0.6), and microsecond lifetimes (e.g., 1-14 micros). The strongly allowed phosphorescence in these complexes is the result of significant spin-orbit coupling of the Ir center. The lowest energy (emissive) excited state in these C(**)N2Ir(acac) complexes is a mixture of (3)MLCT and (3)(pi-pi) states. By choosing the appropriate C(**)N ligand, C(**)N2Ir(acac) complexes can be prepared which emit in any color from green to red. Simple, systematic changes in the C(**)N ligands, which lead to bathochromic shifts of the free ligands, lead to similar bathochromic shifts in the Ir complexes of the same ligands, consistent with "C(**)N2Ir"-centered emission. Three of the C(**)N2Ir(acac) complexes were used as dopants for organic light emitting diodes (OLEDs). The three Ir complexes, i.e., bis(2-phenylpyridinato-N,C2')iridium(acetylacetonate) [ppy2Ir(acac)], bis(2-phenyl benzothiozolato-N,C2')iridium(acetylacetonate) [bt2Ir(acac)], and bis(2-(2'-benzothienyl)pyridinato-N,C3')iridium(acetylacetonate) [btp2Ir(acac)], were doped into the emissive region of multilayer, vapor-deposited OLEDs. The ppy2Ir(acac)-, bt2Ir(acac)-, and btp2Ir(acac)-based OLEDs give green, yellow, and red electroluminescence, respectively, with very similar current-voltage characteristics. The OLEDs give high external quantum efficiencies, ranging from 6 to 12.3%, with the ppy2Ir(acac) giving the highest efficiency (12.3%, 38 lm/W, >50 Cd/A). The btp2Ir(acac)-based device gives saturated red emission with a quantum efficiency of 6.5% and a luminance efficiency of 2.2 lm/W. These C(**)N2Ir(acac)-doped OLEDs show some of the highest efficiencies reported for organic light emitting diodes. The high efficiencies result from efficient trapping and radiative relaxation of the singlet and triplet excitons formed in the electroluminescent process.
ABSTRACT
We relate the chemical structure of a series of methyl (Me) substituted group III metal tris(8-quinolinolato) chelates (nMeq(3)M: n = 0, 3, 4, 5; M = Al(3+), Ga(3+)) to their photoluminescence (PL), electroluminescence, and thermal properties. Methylation of the 8-quinolinol ligand at the 3 or 4 position (pyridyl ring) results in a factor of 1.4 and 3.0 enhancement of PL quantum efficiency (phi(PL)), respectively, whereas methylation at the 5 position (phenoxide ring) results in a factor of approximately 3.0 decrease in phi(PL) relative to the unsubstituted analogue. Electroluminescent quantum efficiencies of undoped organic light-emitting devices using the aluminum tris(8-quinolinolato) chelates are 1, 0.45, 1.4, and 0.80% for unsubstituted 5-, 4-, and 3-methyl-8-quinolinol ligands, respectively. Devices made with the latter two ligands have a higher operating voltage to generate the same current density. Similar trends were observed for methylation of gallium tris(8-quinolinolato) chelates. We relate these results to the thermal properties of the compounds measured by simultaneous differential scanning calorimetry and thermal gravimetric analysis. The C-4 methylated derivatives exhibit approximately 60 degrees C lower crystalline melting points than all other derivatives, indicating the weakest cohesive forces between molecules. Unlike Alq(3), both the C-4 and C-5 methylated derivatives show no recrystallization of the glassy state below 500 degrees C and exhibit approximately 20-25 degrees C higher glass transition temperatures. We infer that methylation of the 8-quinolinol ligand reduces intermolecular interactions and consequently impedes charge transport through the film.
ABSTRACT
We study the internal and external quantum efficiencies of vacuum-deposited organic light-emitting devices (OLED's). The internal quantum efficiency of OLED's based on tris-(8-hydroxyquinoline) aluminum is calculated to be 5.7 times the observed external quantum efficiency ?(e), consistent with measurements. We demonstrate a shaped substrate that increases ?(e) by a factor of 1.9+/-0.2 over similar OLED's fabricated upon flat glass substrates and leads to a 100%-emissive aperture, i.e., the emitting area completely occupies the display area even in the presence of metal interconnects. We also discuss a substrate structure that increases ?(e) by an additional factor of 2. The high device efficiencies are promising for developing OLED-based displays with extremely low power consumption and increased operational lifetime.
ABSTRACT
We demonstrate mechanically flexible, organic light-emitting devices (OLED's) based on the nonpolymetric thin-film materials tris-(8-hydroxyquinoline) aluminum (Alq(3)) and N, N(?) -diphenyl- N, N(?) -bis(3-methylphenyl)1- 1(?) biphenyl-4, 4(?) diamine (TPD). The single heterostructure is vacuum deposited upon a transparent, lightweight, thin plastic substrate precoated with a transparent, conducting indium tin oxide thin film. The flexible OLED performance is comparable with that of conventional OLED's deposited upon glass substrates and does not deteriorate after repeated bending. The large-area (~1 - cm>(2)) devices can be bent without failure even after a permanent fold occurs if they are on the convex substrate surface or over a bend radius of ~0.5>cm if they are on the concave surface. Such devices are useful for ultralightweight, flexible, and comfortable full-color flat panel displays.
ABSTRACT
We describe a novel integrated, optically powered optoelectronic array for use in 2-D interconnection networks. We discuss a generic optoelectronic processing structure and propose two circuit schemes for realizing these interconnect arrays. It is shown that optical powering of the array pixel electronics considerably reduces the high frequency crosstalk between adjacent array elements, leading to improvements in bandwidth by >1 order of magnitude when compared with similar conventionally powered systems. Design criteria are established for determining the trade-offs between fanout and power dissipation, and factors limiting packing density in the optically powered scheme are also discussed. We also compare the performance of optically powered optoelectronic, conventional optoelectronic and all-optical systems on the basis of bandwidth, crosstalk, packing density, and functionality and find that optical powering has several advantages for use in advanced system architectures.
ABSTRACT
Thermal, electrical, and noise characteristics of a GaAs junction FET are described. Low voltage noise [1.5+/-0.2 nV/(Hz)(1/2) at T =4.2 K] and insensitivity to temperature change in the range 1.3< or =T < or =300 K make it suitable for low-temperature applications.
