Quasinormal-Mode Perturbation Theory for Dissipative and Dispersive Optomechanics.

Despite the several novel features arising from the dissipative optomechanical coupling, such effect remains vastly unexplored due to the lack of a simple formalism that captures non-Hermiticity in the engineering of optomechanical systems. In this Letter, we show that quasinormal-mode-based perturbation theory is capable of correctly predicting both dispersive and dissipative optomechanical couplings. We validate our model through simulations and also by comparison with experimental results reported in the literature. Finally, we apply this formalism to plasmonic systems, used for molecular optomechanics, where strong dissipative coupling signatures in the amplification of vibrational modes could be observed.

Fourier transform spectrometer on silicon with thermo-optic non-linearity and dispersion correction.

Miniaturized integrated spectrometers will have unprecedented impact on applications ranging from unmanned aerial vehicles to mobile phones, and silicon photonics promises to deliver compact, cost-effective devices. Mirroring its ubiquitous free-space counterpart, a silicon photonics-based Fourier transform spectrometer (Si-FTS) can bring broadband operation and fine resolution to the chip scale. Here we present the modeling and experimental demonstration of a thermally tuned Si-FTS accounting for dispersion, thermo-optic non-linearity, and thermal expansion. We show how these effects modify the relation between the spectrum and interferogram of a light source and we develop a quantitative correction procedure through calibration with a tunable laser. We retrieve a broadband spectrum (7 THz around 193.4 THz with 0.38-THz resolution consuming 2.5 W per heater) and demonstrate the Si-FTS resilience to fabrication variations-a major advantage for large-scale manufacturing. Providing design flexibility and robustness, the Si-FTS is poised to become a fundamental building block for on-chip spectroscopy.

Hybrid multimode resonators based on grating-assisted counter-directional couplers.

Research thrusts in silicon photonics are developing control operations using higher order waveguide modes for next generation high-bandwidth communication systems. In this context, devices allowing optical processing of multiple waveguide modes can reduce architecture complexity and enable flexible on-chip networks. We propose and demonstrate a hybrid resonator dually resonant at the 1st and 2nd order modes of a silicon waveguide. We observe 8 dB extinction ratio and modal conversion range of 20 nm for the 1st order quasi-TE mode input.

Modeling quasi-dark states with temporal coupled-mode theory.

Coupled resonators are commonly used to achieve tailored spectral responses and allow novel functionalities in a broad range of applications. The Temporal Coupled-Mode Theory (TCMT) provides a simple and general tool that is widely used to model these devices. Relying on TCMT to model coupled resonators might however be misleading in some circumstances due to the lumped-element nature of the model. In this article, we report an important limitation of TCMT related to the prediction of dark states. Studying a coupled system composed of three microring resonators, we demonstrate that TCMT predicts the existence of a dark state that is in disagreement with experimental observations and with the more general results obtained with the Transfer Matrix Method (TMM) and the Finite-Difference Time-Domain (FDTD) simulations. We identify the limitation in the TCMT model to be related to the mechanism of excitation/decay of the supermodes and we propose a correction that effectively reconciles the model with expected results. Our discussion based on coupled microring resonators can be useful for other electromagnetic resonant systems due to the generality and far-reach of the TCMT formalism.

Spectral engineering with coupled microcavities: active control of resonant mode-splitting.

Optical mode-splitting is an efficient tool to shape and fine-tune the spectral response of resonant nanophotonic devices. The active control of mode-splitting, however, is either small or accompanied by undesired resonance-shifts, often much larger than the resonance splitting. We report a control mechanism that enables reconfigurable and widely tunable mode splitting while efficiently mitigating undesired resonance shifts. This is achieved by actively controlling the excitation of counter-traveling modes in coupled resonators. The transition from a large splitting (80 GHz) to a single-notch resonance is demonstrated using low-power microheaters (35 mW). We show that the spurious resonance shift in our device is only limited by thermal crosstalk, and resonance-shift-free splitting control may be achieved.

Embedded coupled microrings with high-finesse and close-spaced resonances for optical signal processing.

Single microring resonators have been used in applications such as wavelength multicasting and microwave photonics, but the dependence of the free spectral range with ring radius imposes a trade-off between the required GHz optical channel spacing, footprint and power consumption. We demonstrate four-channel all-optical wavelength multicasting using only 1 mW of control power, with converted channel spacing of 40-60 GHz. Our device is based on a compact embedded microring design fabricated on a scalable SOI platform. The coexistence of close resonance spacing and high finesse (205) in a compact footprint is possible due to enhanced quality factors (30,000) resulting from the embedded configuration and the coupling-strength dependence of resonance spacing, instead of ring size. In addition, we discuss the possibility of achieving continuously mode splitting from a single-notch resonance up to 40 GHz.

Carrier saturation in multiple quantum well metallo-dielectric semiconductor nanolaser: is bulk material a better choice for gain media?

Although multi quantum well (MQW) structure is frequently suggested as the appropriate medium for providing optical gain in nanolasers with low threshold current, we demonstrate that in general bulk gain medium can be a better choice. We show that the high threshold gain required for nanolasers demands high threshold carrier concentrations and therefore a highly degenerate condition in which the barriers between the quantum wells are heavily pumped. As a result, there occurs spontaneous emission from the barrier in very dissipative low Q modes or undesired confined higher Q modes with resonance wavelengths close to the barrier bandgap. This results in a competition between wells and barriers that suppresses lasing. A complete model involving the optical properties of the resonant cavity combined with the carrier injection in the multilayer structure is presented to support our argument. With this theoretical model we show that while lasing is achieved in the nanolaser with bulk gain media, the nanolaser with MQW gain structure exhibits well emission saturation due to the onset of barrier emission.

Purcell effect in sub-wavelength semiconductor lasers.

We present a formal treatment of the modification of spontaneous emission rate by a cavity (Purcell effect) in sub-wavelength semiconductor lasers. To explicitly express the assumptions upon which our formalism builds, we summarize the results of non-relativistic quantum electrodynamics (QED) and the emitter-field-reservoir model in the quantum theory of damping. Within this model, the emitter-field interaction is modified to the extent that the field mode is modified by its environment. We show that the Purcell factor expressions frequently encountered in the literature are recovered only in the hypothetical condition when the gain medium is replaced by a transparent medium. Further, we argue that to accurately evaluate the Purcell effect, both the passive cavity boundary and the collective effect of all emitters must be included as part of the mode environment.

a-SiOx active photonic crystal resonator membrane fabricated by focused Ga+ ion beam.

We have fabricated thin erbium-doped amorphous silicon sub-oxide (a-SiOx) photonic crystal membrane using focused gallium ion beam (FIB). The photonic crystal is composed of a hexagonal lattice with a H1 defect supporting two quasi-doubly degenerate second order dipole states. 2-D simulation was used for the design of the structure and full 3-D FDTD (Finite-Difference Time-Domain) numerical simulations were performed for a complete analysis of the structure. The simulation predicted a quality factor for the structure of Q = 350 with a spontaneous emission enhancement of 7. Micro photoluminescence measurements showed an integrated emission intensity enhancement of ~2 times with a Q = 130. We show that the discrepancy between simulation and measurement is due to the conical shape of the photonic crystal holes and the optical losses induced by FIB milling.