Ultra-High-Response, Multiply Twisted Electro-optic Chromophores: Influence of π-System Elongation and Interplanar Torsion on Hyperpolarizability.

The systematic synthesis, structural, optical spectroscopic, and second-order nonlinear optical (NLO) characterization of a series of donor-acceptor poly-arylene chromophores which have heretofore unachieved π-extension and substantial twisting from planarity, are reported: specifically, two-ring 2TTMC, dicyano(4-(3,5-dimethyl-1-(2-propylheptyl)pyridin-1-ium-4-yl)-3-methylphenyl)methanide; three-ring 3TTMC, dicyano(4'-(3,5-dimethyl-1-(2-propylheptyl)pyridin-1-ium-4-yl)-2,2',3',5',6'-pentamethyl[1,1'-biphenyl]-4-yl)methanide; and four-ring 4TTMC, dicyano(4″-(3,5-dimethyl-1-(2-propylheptyl)pyridin-1-ium-4-yl)-2,2',3″,6,6'-pentamethyl[1,1':4',1″-terphenyl]-4-yl)methanide. Single-crystal X-ray diffraction, DFT-optimized geometries, and B3LYP/INDO-SOS analysis identify three key features underlying the very large NLO response: (1) For ring catenation of three or greater, sterically enforced π-system twists are only essential near the chromophore donor and acceptor sites to ensure large NLO responses. (2) For synthetic efficiency, deletion of one ortho-methyl group from o,o',o″,o‴-tetramethylbiaryl junctures, only slightly relaxes the biaryl twist angle from 89.6° to ∼80°. (3) Increased arylene catenation from two to three to four rings (2TTMC→ 3TTMC → 4TTMC) greatly enhances NLO response, zwitterionic charge localization, and thus the ground-state dipole moment, consistent with the contracted antiparallel solid-state π-π stacking distances of 8.665 → 7.883 → 7.361 Å, respectively. This supports zwitterionic ground states in these chromophores as do significant optical spectroscopic solvatochromic shifts, with aryl-aryl twisting turning on significant intra-subfragment absorption. Computed molecular hyperpolarizabilities (µß) approach an unprecedented 900,000 × 10(-48) esu, while estimated chromophore figures of merit, µß(vec)/M(w), approach 1500 × 10(-48) esu, 1.5 times larger than the highest known values for twisted chromophores and >33 times larger than that of planar donor-acceptor chromophores.

Twisted π-system chromophores for all-optical switching.

Molecular chromophores with twisted π-electron systems have been shown to possess unprecedented values of the quadratic hyperpolarizability, ß, with very large real parts and much smaller imaginary parts. We report here an experimental and theoretical study which shows that these twisted chromophores also possess very large values of the real part of the cubic hyperpolarizability, γ, which is responsible for nonlinear refraction. Thus, for the two-ring twisted chromophore TMC-2 at 775 nm, relatively close to one-photon resonance, n(2) extrapolated to neat substance is large and positive (1.87 × 10(-13) cm(2)/W), leading to self-focusing. Furthermore, the third-order response includes a remarkably low two-photon absorption coefficient, which means minimal nonlinear optical losses: the T factor, α(2)λ/n(2), is 0.308. These characteristics are attributed to closely spaced singlet biradical and zwitterionic states and offer promise for applications in all-optical switching.

Self-assembly from the gas-phase: design and implementation of small-molecule chromophore precursors with large nonlinear optical responses.

Efficiently organizing molecular nonlinear optical (NLO) chromophores having large first-order hyperpolarizabilities (beta) into acentric microstructures for electro-optic (EO) applications represents a significant materials synthesis and processing challenge, in part due to interchromophore dipolar interactions that promote centrosymmetric organization. Here we report the computational modeling, synthesis, and characterization of a series of eight heteroaromatic organic chromophores, designed to self-organize from the vapor phase via directed hydrogen-bond networks, into acentric thin films. Introduction of alpha,omega-donor-acceptor hydrogen-bonding substituents along the molecular long axes tunes properties such as hyperpolarizability, volatility, thermal stability, film-forming properties, and macroscopic NLO response (chi((2))). DFT-level molecular modeling, INDO/S optical property analysis, and sum-overstates computation indicate that molecular-core fluorination and hydrogen-bond donor incorporation can increase beta(vec) up to 40x versus that of typical fluorine-free chromophores. Furthermore, inclusion of sterically induced biphenyl conjugative decoupling between chromophore pi-donor substituents and the hydrogen-bonding donor sites increases beta by approximately 50%. Experimental thin-film second harmonic generation (SHG) spectroscopy confirms these trends in calculated responses, with chi((2)) increasing 7.5x upon chromophore core fluorination and 15x with hydrogen-bonding donor substitution, thereby achieving macroscopic responses as high as 302 pm/V at omega(o) = 1064 nm. In addition to response trends, cluster calculations also reveal linear additivity in beta(vec) with catenation for all benzoic acid-containing chromophores up to longitudinally aligned trimers. Linear scaling of SHG response with film thickness is observed for benzoic acid-containing chromophores up to 1.0 microm film thickness.

Structure-performance correlations in vapor phase deposited self-assembled nanodielectrics for organic field-effect transistors.

Organic field-effect transistor (OFETs) are fabricated using thin, vapor-deposited films of both the gate dielectric (vapor-deposited self-assembled nanodielectric, v-SAND) and the organic semiconductor. The nanoscopic self-assembled gate dielectrics are structurally organized via molecular precursor hydrogen-bonding interactions, followed by planarization with a vapor-deposited inorganic SiO(x) film. It is shown here that the metal-insulator-semiconductor (MIS) and OFET device electrical properties are sensitive to the v-SAND molecular dipolar orientation. In addition, alternating (organic/inorganic/organic/...) and nonalternating (1 organic layer + 1 inorganic layer) v-SAND microstructural arrangements are investigated, and the microstructures are correlated with MIS and OFET device characteristics. Films with alternating microstructures have larger capacitances than nonalternating films of the same thickness. However, they also have larger leakage currents, associated with the enhanced polarization of well-ordered dipolar films. For pentacene OFETs, the largest mobilities (approximately 3 cm(2)/(V s)) are associated with the high-capacitance nonalternating microstructure, and the lowest mobilities (approximately 0.5 cm(2)/(V s)) are associated with the alternating microstructure. v-SAND gated ambient-stable, n-type organic semiconductors show the opposite trends, where slightly greater OFET performance is observed with the lower-capacitance gate dielectric. For the p-type and one of the n-type v-SAND-based OFETs, the performance (under vacuum and ambient) is comparable to, or surpasses, that of previously reported devices using conventional SiO(2) as the gate dielectric. More importantly, the devices fabricated here operate at far lower voltages. These results indicate that v-SAND dielectrics are promising for future flexible organic electronics requiring low-temperature, solvent-free deposition conditions.

Vapor phase self-assembly of molecular gate dielectrics for thin film transistors.

Organic-inorganic films grown entirely via a vapor-phase deposition process and composed of highly polarizable molecular structures are investigated as gate dielectrics in organic field-effect transistors (OFETs). Molecules 1 and 2 form self-ordered thin films via hydrogen bonding, and these organic-inorganic structures exhibit large capacitances and large pentacene OFET mobilities.