ABSTRACT
Nucleic acids are programmable materials that can self-assemble into defined or stochastic three-dimensional network architectures. Various attributes of self-assembled, cross-linked Deoxyribonucleic acid (DNA) hydrogels have recently been investigated, including their mechanical properties and potential biomedical functions. Herein, for the first time, we describe the successful construction of pure DNA aerogels and DNA-wrapped carbon nanotube (CNT) composite (DNA-CNT) aerogels via a single-step freeze-drying of the respective hydrogels. These aerogels reveal highly porous and randomly branched structures with low density. The electrical properties of pure DNA aerogel mimic that of a simple capacitor; in contrast, the DNA-CNT aerogel displays a fascinating resistive switching behavior in response to an applied bias voltage sweep reminiscent of a volatile memristor. We believe these novel aerogels can serve as a platform for developing complex biomimetic devices for a wide range of applications, including real-time computation, neuromorphic computing, biochemical sensing, and biodegradable functional implants. More importantly, insight obtained here on self-assembling DNA to create aerogels will pave the way to construct novel aerogel-based material platforms from DNA coated or wrapped functional entities.
ABSTRACT
Chalcogenide resistive switches (RS), such as Ag2S, change resistance due to the growth of metallic filaments between electrodes along the electric field gradient. Therefore, they are candidates for neuromorphic and volatile memory applications. This work analyzed the RS of individual Ag2S nanowires (NWs) and extended the basic RS model to reproduce experimental observations. The work models resistivity of the device as a percolation of the conductive filaments. It also addressed continuous fluctuations of the resistivity with a stochastic change in volume fractions of the filaments in the device. As a result, these fluctuations cause unpredictable patterns in current-voltage characteristics and include a spontaneous change in resistance of the device during the linear sweep that conventional memristor models with constant resistivity cannot represent. The parameters of the presented stochastic model of a single Ag2S NW were fitted to the experimental data and reproduced key features of RS in the physical devices. Moreover, the model suggested a non-core shell structure of the Ag2S NWs. The outcome of this work is aimed to aid in simulating large self-assembled memristive networks and help to extend existing RS models.
