ABSTRACT
Inkjet printing electronics is a growing market that reached 7.8 billion USD in 2020 and that is expected to grow to â¼23 billion USD by 2026, driven by applications like displays, photovoltaics, lighting, and radiofrequency identification. Incorporating two-dimensional (2D) materials into this technology could further enhance the properties of the existing devices and/or circuits, as well as enable the development of new concept applications. Along these lines, here we report an easy and cheap process to synthesize inks made of multilayer hexagonal boron nitride (h-BN)-an insulating 2D layered material-by the liquid-phase exfoliation method and use them to fabricate memristors. The devices exhibit multiple stochastic phenomena that are very attractive for use as entropy sources in electronic circuits for data encryption (physical unclonable functions [PUFs], true random number generators [TRNGs]), such as: (i) a very disperse initial resistance and dielectric breakdown voltage, (ii) volatile unipolar and non-volatile bipolar resistive switching (RS) with a high cycle-to-cycle variability of the state resistances, and (iii) random telegraph noise (RTN) current fluctuations. The clue for the observation of these stochastic phenomena resides on the unpredictable nature of the device structure derived from the inkjet printing process (i.e., thickness fluctuations, random flake orientations), which allows fabricating electronic devices with different electronic properties. The easy-to-make and cheap memristors here developed are ideal to encrypt the information produced by multiple types of objects and/or products, and the versatility of the inkjet printing method, which allows effortless deposition on any substrate, makes our devices especially attractive for flexible and wearable devices within the internet-of-things.
Subject(s)
Electronics , Wearable Electronic Devices , Entropy , InkABSTRACT
Lead-free PEA2SnI4-based perovskite LEDs are successfully inkjet-printed on rigid and flexible substrates. Red-emitting devices (λmax = 633 nm) exhibit, under ambient conditions, a maximum external quantum efficiency (EQEmax) of 1% with a related brightness of 30 cd/m2 at 10 mA/cm2.
ABSTRACT
In this paper, we investigated how different growth conditions (i.e., temperature, growth time, and composition) allows for trading off cost (i.e., In content) and performance of nanostructured indium tin oxide (ITO) for biosensing applications. Next, we compared the behavior of these functionalized nanostructured surfaces obtained in different growth conditions between each other and with a standard thin film as a reference, observing improvements in effective detection area up to two orders of magnitude. This enhanced the biosensor's sensitivity, with higher detection level, better accuracy and higher reproducibility. Results show that below 150 °C, the growth of ITO over the substrate forms a homogenous layer without any kind of nanostructuration. In contrast, at temperatures higher than 150 °C, a two-phase temperature-dependent growth was observed. We concluded that (i) nanowire length grows exponentially with temperature (activation energy 356 meV) and leads to optimal conditions in terms of both electroactive surface area and sensitivity at around 300 °C, (ii) longer times of growth than 30 min lead to larger active areas and (iii) the In content in a nanostructured film can be reduced by 10%, obtaining performances equivalent to those found in commercial flat-film ITO electrodes. In summary, this work shows how to produce appropriate materials with optimized cost and performances for different applications in biosensing.
