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1.
Nanomaterials (Basel) ; 14(6)2024 Mar 08.
Article in English | MEDLINE | ID: mdl-38535634

ABSTRACT

The operation of a four-channel multiplexer, utilizing multimode interference (MMI) wavelength division multiplexing (WDM) technology, can be designed through the cascading of MMI couplers or by employing angled MMI couplers. However, conventional designs often occupy a larger footprint, spanning a few millimeters, thereby escalating the energy power requirements for the photonic chip. In response to this challenge, we propose an innovative design for a four-channel silicon nitride (Si3N4) MMI coupler with a compact footprint. This design utilizes only a single MMI coupler unit, operating within the O-band spectrum. The resulting multiplexer device can efficiently transmit four channels with a wavelength spacing of 20 nm, covering the O-band spectrum from 1270 to 1330 nm, after a short light propagation of 22.8 µm. Notably, the multiplexer achieves a power efficiency of 70% from the total input energy derived from the four O-band signals. Power losses range from 1.24 to 1.67 dB, and the MMI coupler length and width exhibit a favorable tolerance range. Leveraging Si3N4 material and waveguide inputs and output tapers minimizes light reflection from the MMI coupler at the input channels. Consequently, this Si3N4-based MMI multiplexer proves suitable for deployment in O-band transceiver data centers employing WDM methodology. Its implementation offers the potential for higher data bitrates while maintaining an exemplary energy consumption profile for the chip footprint.

2.
Nanomaterials (Basel) ; 13(14)2023 Jul 15.
Article in English | MEDLINE | ID: mdl-37513088

ABSTRACT

This paper presents a new design for a 1 × 4 optical power splitter using multimode interference (MMI) coupler in silicon nitride (Si3N4) strip waveguide structures. The main functionality of the proposed design is to use Si3N4 for dealing with the back reflection (BR) effect that usually happens in silicon (Si) MMI devices due to the self-imaging effect and the higher index contrast between Si and silicon dioxide (SiO2). The optimal device parameters were determined through numerical optimizations using the beam propagation method (BPM) and finite difference time domain (FDTD). Results demonstrate that the power splitter with a length of 34.6 µm can reach equal distribution power in each output port up to 24.3% of the total power across the O-band spectrum with 0.13 dB insertion loss and good tolerance MMI coupler parameters with a shift of ±250 nm. Additionally, the back reflection range over the O-band was found to be 40.25-42.44 dB. This demonstrates the effectiveness of the incorporation using Si3N4 MMI and adiabatic input and output tapers in mitigating unwanted BR to ensure that a good signal is received from the laser. This design showcases the significant potential for data-center networks, offering a promising solution for efficient signal distribution and facilitating high-performance and reliable optical signal routing within the O-band range. By leveraging the advantages of Si3N4 and the MMI coupler, this design opens possibilities for advanced optical network architectures and enables efficient transmission of optical signals in the O-band range.

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