Practical aspects of diffractive imaging using an atomic-scale coherent electron probe.

Four-dimensional scanning transmission electron microscopy (4D-STEM) is a technique where a full two-dimensional convergent beam electron diffraction (CBED) pattern is acquired at every STEM pixel scanned. Capturing the full diffraction pattern provides a rich dataset that potentially contains more information about the specimen than is contained in conventional imaging modes using conventional integrating detectors. Using 4D datasets in STEM from two specimens, monolayer MoS2 and bulk SrTiO3, we demonstrate multiple STEM imaging modes on a quantitative absolute intensity scale, including phase reconstruction of the transmission function via differential phase contrast imaging. Practical issues about sampling (i.e. number of detector pixels), signal-to-noise enhancement and data reduction of large 4D-STEM datasets are emphasized.

Creating a Stable Oxide at the Surface of Black Phosphorus.

The stability of the surface of in situ cleaved black phosphorus crystals upon exposure to atmosphere is investigated with synchrotron-based photoelectron spectroscopy. After 2 days atmosphere exposure a stable subnanometer layer of primarily P2O5 forms at the surface. The work function increases by 0.1 eV from 3.9 eV for as-cleaved black phosphorus to 4.0 eV after formation of the 0.4 nm thick oxide, with phosphorus core levels shifting by <0.1 eV. The results indicate minimal charge transfer, suggesting that the oxide layer is suitable for passivation or as an interface layer for further dielectric deposition.

Photothermal response in dual-gated bilayer graphene.

The photovoltaic and bolometric photoresponse in gapped bilayer graphene was investigated by optical and transport measurements. A pulse coincidence technique at 1.5 µm was used to measure the response times as a function of temperature. The bolometric and photovoltaic response times were found to be identical implying that the photovoltaic response is also governed by hot electron thermal relaxation. Response times of τ ∼ 100-20 ps were found for temperatures from 3-100 K. Above 10 K, the relaxation time was observed to be τ = 25 ± 5 ps, independent of temperature within noise.

Universal conductance fluctuations in Dirac materials in the presence of long-range disorder.

We study quantum transport in Dirac materials with a single fermionic Dirac cone (strong topological insulators and graphene in the absence of intervalley coupling) in the presence of non-Gaussian long-range disorder. We show, by directly calculating numerically the conductance fluctuations, that in the limit of very large system size and disorder strength, quantum transport becomes universal. However, a systematic deviation away from universality is obtained for realistic system parameters. By comparing our results to existing experimental data on 1/f noise, we suggest that many of the graphene samples studied to date are in a nonuniversal crossover regime of conductance fluctuations.

Dual-gated bilayer graphene hot-electron bolometer.

Graphene is an attractive material for use in optical detectors because it absorbs light from mid-infrared to ultraviolet wavelengths with nearly equal strength. Graphene is particularly well suited for bolometers-devices that detect temperature-induced changes in electrical conductivity caused by the absorption of light-because its small electron heat capacity and weak electron-phonon coupling lead to large light-induced changes in electron temperature. Here, we demonstrate a hot-electron bolometer made of bilayer graphene that is dual-gated to create a tunable bandgap and electron-temperature-dependent conductivity. The bolometer exhibits a noise-equivalent power (33 fW Hz(-1/2) at 5 K) that is several times lower, and intrinsic speed (>1 GHz at 10 K) three to five orders of magnitude higher than commercial silicon bolometers and superconducting transition-edge sensors at similar temperatures.

High-fidelity conformation of graphene to SiO2 topographic features.

High-resolution noncontact atomic force microscopy of SiO2 reveals previously unresolved roughness at the few-nm length scale, and scanning tunneling microscopy of graphene on SiO2 shows graphene to be slightly smoother than the supporting SiO2 substrate. A quantitative energetic analysis explains the observed roughness of graphene on SiO2 as extrinsic, and a natural result of highly conformal adhesion. Graphene conforms to the substrate down to the smallest features with nearly 99% fidelity, indicating conformal adhesion can be highly effective for strain engineering of graphene.

Defect scattering in graphene.

Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as is evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is 4 times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than 4e(2)/pih, the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in midgap states.

Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering.

We reduce the dimensionless interaction strength alpha in graphene by adding a water overlayer in ultrahigh vacuum, thereby increasing dielectric screening. The mobility limited by long-range impurity scattering is increased over 30%, due to the background dielectric constant enhancement leading to a reduced interaction of electrons with charged impurities. However, the carrier-density-independent conductivity due to short-range impurities is decreased by almost 40%, due to reduced screening of the impurity potential by conduction electrons. The minimum conductivity is nearly unchanged, due to canceling contributions from the electron-hole puddle density and long-range impurity mobility. Experimental data are compared with theoretical predictions with excellent agreement.

Density inhomogeneity driven percolation metal-insulator transition and dimensional crossover in graphene nanoribbons.

Transport in graphene nanoribbons with an energy gap in the spectrum is considered in the presence of random charged impurity centers. At low carrier density, we predict and establish that the system exhibits a density inhomogeneity driven two dimensional metal-insulator transition that is in the percolation universality class. For very narrow graphene nanoribbons (with widths smaller than the disorder induced length scale), we predict that there should be a dimensional crossover to the 1D percolation universality class with observable signatures in the transport gap. In addition, there should be a crossover to the Boltzmann transport regime at high carrier densities. The measured conductivity exponent and the critical density are consistent with this percolation transition scenario.

Atomic structure of graphene on SiO2.

We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e., a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution scanning tunneling microscopy images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically clean graphene sheets.

Four-point resistance of individual single-wall carbon nanotubes.

We have studied the resistance of single-wall carbon nanotubes measured in a four-point configuration with noninvasive voltage electrodes. The voltage drop is detected using multiwalled carbon nanotubes while the current is injected through nanofabricated Au electrodes. The resistance at room temperature is shown to be linear with the length as expected for a classical resistor. This changes at cryogenic temperature; the four-point resistance then depends on the resistance at the Au-tube interfaces and can even become negative due to quantum-interference effects.

Electric-field-dependent charge-carrier velocity in semiconducting carbon nanotubes.

Charge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts has been studied at high bias. We observe nearly symmetric ambipolar transport with electron and hole currents significantly exceeding 25 microA, the reported current limit in metallic SWNTs due to optical phonon emission. Four simple models for the field-dependent velocity (ballistic, current saturation, velocity saturation, and constant mobility) are studied in the unipolar regime; the high-bias behavior is best explained by a velocity-saturation model with a saturation velocity of 2 x 10(7) cm/s.

Rotational actuators based on carbon nanotubes.

Nanostructures are of great interest not only for their basic scientific richness, but also because they have the potential to revolutionize critical technologies. The miniaturization of electronic devices over the past century has profoundly affected human communication, computation, manufacturing and transportation systems. True molecular-scale electronic devices are now emerging that set the stage for future integrated nanoelectronics. Recently, there have been dramatic parallel advances in the miniaturization of mechanical and electromechanical devices. Commercial microelectromechanical systems now reach the submillimetre to micrometre size scale, and there is intense interest in the creation of next-generation synthetic nanometre-scale electromechanical systems. We report on the construction and successful operation of a fully synthetic nanoscale electromechanical actuator incorporating a rotatable metal plate, with a multi-walled carbon nanotube serving as the key motion-enabling element.

New vortex-matter size effect observed in Bi(2)Sr(2)CaCu(2)O(8 + delta).

The vortex-matter 3D to 2D phase transition is studied in micron-sized Bi(2)Sr(2)CaCu(2)O(8 + delta) single crystals using local Hall magnetization measurements. At a given temperature, the second magnetization peak, the signature of a possible 3D--2D vortex phase transition, disappears for samples smaller than a critical length. We suggest that this critical length should be equated with the 2D vortex lattice ab-plane correlation length R(2D)(c). The magnitude and temperature dependence of R(2D)(c) agree well with Larkin-Ovchinnikov collective pinning theory.

Scanned probe microscopy of electronic transport in carbon nanotubes.

We use electrostatic force microscopy and scanned gate microscopy to probe the conducting properties of carbon nanotubes at room temperature. Multiwalled carbon nanotubes are shown to be diffusive conductors, while metallic single-walled carbon nanotubes are ballistic conductors over micron lengths. Semiconducting single-walled carbon nanotubes are shown to have a series of large barriers to conduction along their length. These measurements are also used to probe the contact resistance and locate breaks in carbon nanotube circuits.