ABSTRACT
Thermocompression bonding for wafer-level hermetic packaging was demonstrated at the lowest temperature of 370 to 390 °C ever reported using Al films with thin Sn capping or insertions as bonding layer. For shrinking the chip size of MEMS (micro electro mechanical systems), a smaller size of wafer-level packaging and MEMSâ»ASIC (application specific integrated circuit) integration are of great importance. Metal-based bonding under the temperature of CMOS (complementary metal-oxide-semiconductor) backend process is a key technology, and Al is one of the best candidates for bonding metal in terms of CMOS compatibility. In this study, after the thermocompression bonding of two substrates, the shear fracture strength of dies was measured by a bonding tester, and the shear-fractured surfaces were observed by SEM (scanning electron microscope), EDX (energy dispersive X-ray spectrometry), and a surface profiler to clarify where the shear fracture took place. We confirmed two kinds of fracture mode. One mode is Si bulk fracture mode, where the die shear strength is 41.6 to 209 MPa, proportionally depending on the area of Si fracture. The other mode is bonding interface fracture mode, where the die shear strength is 32.8 to 97.4 MPa. Regardless of the fracture modes, the minimum die shear strength is practical for wafer-level MEMS packaging.
ABSTRACT
When inert gas containing water molecules flows into a metal pipe, the water molecules cannot exit instantaneously from the outlet of the pipe but are captured at adsorption sites on the inner surface of the pipe until most of the sites are occupied. A theoretical model and a subsequent experiment in this article show that the delay time depends on the amount of moisture level; the higher the moisture-level, the shorter the delay time. Based on the result, we propose a new method and its implementation to the validation of a standard moisture generation to be used in the field measurement such as in factories and pipe lines.
ABSTRACT
The measurement and control of trace moisture, where the water concentration is lower than 1 ppmv [-76.2 °C for the frost point (°CFP)], are essential for improving the yield rate of semiconductor devices and for ensuring their reliability. A ball surface acoustic wave (SAW) sensor with a sol-gel silica coating exhibited useful characteristics for a trace moisture analyzer (TMA) when the temperature drift of the delay time output was precisely compensated using two-frequency measurement (TFM), where the temperature-compensated relative delay time change (RDTC) was obtained by subtracting the RDTC at the fundamental frequency from that at the third harmonic frequency on an identical propagation path. However, the cost of the measurement circuit was a problem. In this study, a burst waveform undersampling (BUS) circuit based on the theory of undersampling measurement was developed as a practical means. The BUS circuit was useful for precise temperature compensation of the RDTC, and the ball SAW TMA was prototyped by calibrating the RDTC using a TMA based on cavity ring-down spectroscopy (CRDS), which is the most reliable method for trace moisture measurement. The ball SAW TMA outputted a similar concentration to that obtained by the CRDS TMA, and its response time at a set concentration in N2 with a flow rate of 1 l/min was about half that of the CRDS TMA, suggesting that moisture of -80 °CFP was measured within only 1 min. The detection limit at a signal-to-noise ratio of 3 was estimated to be 0.05 ppbv, comparable with that of the CRDS TMA. From these results, it was demonstrated that a practical ball SAW TMA can be realized using the developed BUS circuit.
