Quantitative comparison of corticospinal tracts arising from different cortical areas in humans.

The corticospinal tract (CST), which plays a major role in the control of voluntary limb movements, arises from multiple motor- and somatosensory-related areas in monkeys. Although the cortical origin and quantitative differences in CSTs among the cortical areas are well-documented in monkeys, they are unclear in humans. We quantitatively investigated the CSTs from the cerebral cortex to the cervical cord in healthy volunteers using fiber tractography of diffusion-weighted magnetic resonance imaging. The corticospinal (CS) streamlines arose from nine cortical areas: primary motor area (mean ± SD = 49.71 ± 1.61%), dorsal (16.33 ± 1.37%) and ventral (11.02 ± 0.90%) premotor cortex, supplementary motor area (5.14 ± 0.36%), pre-supplementary motor area (2.46 ± 0.26%), primary somatosensory cortex (11.06 ± 0.91%), Brodmann area 5 (0.88 ± 0.09%), caudal cingulate zone (1.70 ± 0.30%), and posterior part of the rostral cingulate zone (1.70 ± 0.34%). In all cortical areas, the number of CS streamlines gradually decreased from the rostral to caudal spinal segments, but the proportion was maintained throughout the cervical cord. Over 75% of CS streamlines arose from the lateral surface of the frontal lobe, which may explain the voluntary control of dexterous and flexible limb movements in humans. (197/200 words).

AlN formation by an Al/GaN substitution reaction.

Aluminium nitride (AlN) is a promising semiconductor material for use as a substrate in high-power, high-frequency electronic and deep-ultraviolet optoelectronic devices. We study the feasibility of a novel AlN fabrication technique by using the Al/GaN substitution reaction method. The substitution method we propose here consists of an Al deposition process on a GaN substrate by a sputtering technique and heat treatment process. The substitution reaction (Al + GaN = AlN + Ga) is proceeded by heat treatment of the Al/GaN sample, which provides a low temperature, simple and easy process. C-axis-oriented AlN layers are formed at the Al/GaN interface after heat treatment of the Al/GaN samples at some conditions of 1473-1573 K for 0-3 h. A longer holding time leads to an increase in the thickness of the AlN layer. The growth rate of the AlN layer is controlled by the interdiffusion in the AlN layer.

Study of solidification pathway of a MoSiBTiC alloy by optical thermal analysis and in-situ observation with electromagnetic levitation.

MoSiBTiC alloys are promising candidates for next-generation ultrahigh-temperature materials. However, the phase diagram of these alloys has been unknown. We have developed an ultrahigh-temperature thermal analyser based on blackbody radiation that can be used to analyse the melting and solidification of the alloy 67.5Mo-5Si-10B-8.75Ti-8.75 C (mol%). Furthermore, electromagnetic levitation (EML) was used for in-situ observation of solidification and microstructural study of the alloy. On the basis of the results, the following solidification pathway is proposed: Mo solid solution (Moss) begins to crystallize out as a primary phase at 1955 °C (2228 K) from a liquid state, which is followed by a (Moss+TiC) eutectic reaction starting at 1900 °C (2173 K). Molybdenum boride (Mo2B) phase precipitates from the liquid after the eutectic reaction; however, the Mo2B phase may react with the remaining liquid to form Moss and Mo5SiB2 (T2) as solidification proceeds. In addition, T2 also precipitates as a single phase from the liquid. The remaining liquid reaches the (Moss + T2 + TiC) ternary eutectic point at 1880 °C (2153 K), and the (Moss + T2 + Mo2C) eutectic reaction finally occurs at 1720 °C (1993 K). This completes the solidification of the MoSiBTiC alloy.

Reference correlations for the thermal conductivity of liquid copper, gallium, indium, iron, lead, nickel and tin.

The available experimental data for the thermal conductivity of liquid copper, gallium, indium, iron, lead, nickel, and tin has been critically examined with the intention of establishing thermal conductivity reference correlations. All experimental data have been categorized into primary and secondary data according to the quality of measurement specified by a series of criteria. The proposed standard reference correlations for the thermal conductivity of liquid copper, gallium, indium, iron, lead, nickel, and tin are respectively characterized by uncertainties of 9.8, 15.9, 9.7, 13.7, 16.9, 7.7, and 12.6% at the 95% confidence level.

In-band OSNR monitor with high-speed integrated Stokes polarimeter for polarization division multiplexed signal.

An in-band optical signal-to-noise ratio (OSNR) monitor is proposed, based on an instantaneous polarization state distribution analysis. The proposed monitor is simple, and is applicable to polarization division multiplexed signals. We fabricate a high-speed Stokes polarimeter that integrates a planar lightwave circuit (PLC) based polarization filter, high-speed InP/InGaAs photodiodes and InP hetero-junction bipolar transistor (HBT) trans-impedance amplifiers (TIA). We carry out proof-of-concept experiments with the fabricated polarimeter, and successfully measure the OSNR dependent polarization distribution with 100-Gb/s dual polarization quadrature phase shift keying (DP-QPSK) signals.

Silica-based, compact and variable-optical-attenuator integrated coherent receiver with stable optoelectronic coupling system.

We demonstrate a compact and variable-optical-attenuator (VOA) integrated coherent receiver with a silica-based planar lightwave circuit (PLC). To realize the compact receiver, we integrate a VOA in a single PLC chip with polarization beam splitters and optical 90-degree hybrids, and employ a stable optoelectronic coupling system consisting of micro lens arrays and photodiode (PD) subcarriers with high-speed right-angled signal lines. We integrate a VOA and a coherent receiver in a 27x40x6 mm package, and successfully demodulate a 128-Gbit/s polarization division multiplexed (PDM) quadrature phase shift keying (QPSK) signal with a VOA-assisted wide dynamic range of more than 30 dB.

100-Gbit/s PDM-QPSK coherent receiver with wide dynamic range and excellent common-mode rejection ratio.

We report the design and fabrication of a hybrid-integration-type coherent receiver. We optimize the receiver building blocks, and achieve a -25-dB common-mode rejection ratio and a 20-dB signal input power dynamic range.

Does supercooled liquid Si have a density maximum?

We have performed precise measurements of the density of supercooled liquid silicon (l-Si) in the temperature range of 1530-1800 K using an electromagnetic levitation (EML) technique with static magnetic fields. We also performed first-principles molecular dynamics simulation (FPMD) of supercooled l-Si. The observed density of the supercooled l-Si and the FPMD results show good agreement in the temperature range of 1530-1800 K. The structure of the supercooled l-Si also showed good agreement between the experimental measurements and FPMD simulations. Based on these results, we discuss nucleation in supercooled l-Si and also the existence of a density maximum in the supercooled l-Si, which is well known in water at 4 degrees C.