Topological Defect Engineering and PT Symmetry in Non-Hermitian Electrical Circuits.

We employ electric circuit networks to study topological states of matter in non-Hermitian systems enriched by parity-time symmetry PT and chiral symmetry anti-PT (APT). The topological structure manifests itself in the complex admittance bands which yields excellent measurability and signal to noise ratio. We analyze the impact of PT-symmetric gain and loss on localized edge and defect states in a non-Hermitian Su-Schrieffer-Heeger (SSH) circuit. We realize all three symmetry phases of the system, including the APT-symmetric regime that occurs at large gain and loss. We measure the admittance spectrum and eigenstates for arbitrary boundary conditions, which allows us to resolve not only topological edge states, but also a novel PT-symmetric Z_{2} invariant of the bulk. We discover the distinct properties of topological edge states and defect states in the phase diagram. In the regime that is not PT symmetric, the topological defect state disappears and only reemerges when APT symmetry is reached, while the topological edge states always prevail and only experience a shift in eigenvalue. Our findings unveil a future route for topological defect engineering and tuning in non-Hermitian systems of arbitrary dimension.

Topological Phases without Crystalline Counterparts.

We construct a two-dimensional higher-order topological phase protected by a quasicrystalline eightfold rotation symmetry. Our tight-binding model describes a superconductor on the Ammann-Beenker tiling hosting localized Majorana zero modes at the corners of an octagonal sample. In order to analyze this model, we introduce Hamiltonians generated by a local rule, and use this concept to identify the bulk topological properties. We find a Z_{2} bulk topological invariant protecting the corner modes. Our work establishes that there exist topological phases protected by symmetries impossible in a crystal.

Visualization of an axion insulating state at the transition between 2 chiral quantum anomalous Hall states.

Quantum-relativistic materials often host electronic phenomena with exotic spatial distributions. In particular, quantum anomalous Hall (QAH) insulators feature topological boundary currents whose chirality is determined by the magnetization orientation. However, understanding the microscopic nature of edge vs. bulk currents has remained a challenge due to the emergence of multidomain states at the phase transitions. Here we use microwave impedance microscopy (MIM) to directly image chiral edge currents and phase transitions in a magnetic topological insulator. Our images reveal a dramatic change in the edge state structure and an unexpected microwave response at the topological phase transition between the Chern number [Formula: see text] and [Formula: see text] states, consistent with the emergence of an insulating [Formula: see text] state. The magnetic transition width is independent of film thickness, but the transition pattern is distinct in differently initiated field sweeps. This behavior suggests that the [Formula: see text] state has 2 surface states with Hall conductivities of [Formula: see text] but with opposite signs.

Partial Lattice Defects in Higher-Order Topological Insulators.

Nonzero weak topological indices are thought to be a necessary condition to bind a single helical mode to lattice dislocations. In this work we show that higher-order topological insulators (HOTIs) can, in fact, host a single helical mode along screw or edge dislocations (including step edges) in the absence of weak topological indices. When this occurs, the helical mode is necessarily bound to a dislocation characterized by a fractional Burgers vector, macroscopically detected by the existence of a stacking fault. The robustness of a helical mode on a partial defect is demonstrated by an adiabatic transformation that restores translation symmetry in the stacking fault. We present two examples of HOTIs, one intrinsic and one extrinsic, that show helical modes at partial dislocations. Since partial defects and stacking faults are commonplace in bulk crystals, the existence of such helical modes can measurably affect the expected conductivity in these materials.

Coexisting edge states and gapless bulk in topological states of matter.

We consider two-dimensional systems in which edge states coexist with a gapless bulk. Such systems may be constructed, for example, by coupling a gapped two-dimensional state of matter that carries edge states to a gapless two-dimensional system in which the spectrum is composed of a number of Dirac cones. We find that, in the absence of disorder, the edge states could be protected even when the two systems are coupled, due to momentum and energy conservation. We distinguish between weak and strong edge states by the level of their mixing with the bulk. In the presence of disorder, the edge states may be stabilized when the bulk is localized or destabilized when the bulk is metallic. We analyze the conditions under which these two cases occur. Finally, we propose a concrete physical realization for one of our models based on bilayer Hg(Cd)Te quantum wells.