Exchange bias in ferromagnetic bilayers with orthogonal anisotropies: the case of GaMnAsP/GaMnAs combination.

We report the observation of exchange bias in a ferromagnetic Ga0.94Mn0.06As0.77P0.23/ Ga0.94Mn0.06As bilayer, in which the easy axis in one layer is oriented out-of-plane, and in the other in-plane. Magnetization reversal in this system is explored using planar Hall effect (PHE) measurements under various initial conditions and with various field-cooling orientations. Our results show that the two magnetic layers are ferromagnetically exchange-coupled, and that such coupling results in pronounced exchange-bias-like shifts of magnetic hysteresis loops during reversal of in-plane magnetization. The presence of exchange bias in this system can be understood on the basis of magnetic closure domains formed in the layer with the out-of-plane easy axis.

Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy.

We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.

Ultrafast manipulation of topologically enhanced surface transport driven by mid-infrared and terahertz pulses in Bi2Se3.

Topology-protected surface transport of ultimate thinness in three-dimensional topological insulators (TIs) is breaking new ground in quantum science and technology. Yet a challenge remains on how to disentangle and selectively control surface helical spin transport from the bulk contribution. Here we use the mid-infrared and terahertz (THz) photoexcitation of exclusive intraband transitions to enable ultrafast manipulation of surface THz conductivity in Bi2Se3. The unique, transient electronic state is characterized by frequency-dependent carrier relaxations that directly distinguish the faster surface channel than the bulk with no complication from interband excitations or need for reduced bulk doping. We determine the topological enhancement ratio between bulk and surface scattering rates, i.e., γBS/γSS ~3.80 in equilibrium. The ultra-broadband, wavelength-selective pumping may be applied to emerging topological semimetals for separation and control of the protected transport connected with the Weyl nodes from other bulk bands.

Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance.

Magnetization reversal in a GaMnAs trilayer system consisting of two GaMnAs layers separated by a Be-doped GaAs spacer was investigated by magnetotransport measurements. The rotation of magnetization in the two GaMnAs layers is observed as two abrupt independent transitions in planar Hall resistance (PHR). Interestingly, one GaMnAs layer manifests a positive change in PHR, while the other layer shows a negative change for the same rotation of magnetization. Such opposite behavior of the two layers indicates that anisotropic magnetoresistance (AMR) has opposite signs in the two GaMnAs layers. Owing to this opposite behavior of AMR, we are able to identify the sequence of magnetic alignments in the two GaMnAs layers during magnetization reversal. The PHR signal can then be decomposed into two independent contributions, which reveal that the magnetic anisotropy of the GaMnAs layer with negative AMR is predominantly cubic, while it is predominantly uniaxial in the layer with positive AMR. This investigation suggests the ability of engineering the sign of AMR in GaMnAs multilayers, thus making it possible to obtain structures with multi-valued PHR, that can be used as multinary magnetic memory devices.

Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film.

We report an observation of uniaxial magnetic anisotropy along the [100] crystallographic direction in crystalline Fe film grown on Ge buffers deposited on a (001) GaAs substrate. As expected, planar Hall resistance (PHR) measurements reveal the presence of four in-plane magnetic easy axes, indicating the dominance of the cubic anisotropy in the film. However, systematic mapping of the PHR hysteresis loops observed during magnetization reversal at different field orientations shows that the easy axes along the and are not equivalent. Such breaking of the cubic symmetry can only be ascribed to the presence of uniaxial anisotropy along the direction of the Fe film. Analysis of the PHR data measured as a function of orientation of the applied magnetic field allowed us to quantify the magnitude of this uniaxial anisotropy field as Oe. Although this value is only 1.5% of cubic anisotropy field, its presence significantly changes the process of magnetization reversal, revealing the important role of the uniaxial anisotropy in Fe films. Breaking of the cubic symmetry in the Fe film deposited on a Ge buffer is surprising, and we discuss possible reason for this unexpected behavior.

Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band.

The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature T(C). It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band. Here we combine results of channelling experiments, which measure the concentrations both of Mn ions and of holes relevant to the ferromagnetic order, with magnetization, transport, and magneto-optical data to address this issue. Taken together, these measurements provide strong evidence that it is the location of the Fermi level within the impurity band that determines T(C) through determining the degree of hole localization. This finding differs drastically from the often accepted view that T(C) is controlled by valence band holes, thus opening new avenues for achieving higher values of T(C).

Use of the asymmetric planar hall resistance of an Fe film for possible multi-value memory device applications.

Systematic planar Hall measurements have been performed on a ferromagnetic Fe film grown on a standard (001) GaAs substrate at room temperature. The angular dependence of the planar Hall effect revealed the presence of both four-fold (cubic) and two-fold (uniaxial) anisotropies in the 7 nm thick Fe film. The dominance of the four-fold symmetric anisotropy, however, provided four magnetic easy axes near the (100) direction, which results in a two step switching phenomenon in the magnetization reversal process. An interesting asymmetric hysteresis loop was observed in the planar Hall resistance (PHR) when the turning point of the field scan is set at the value in the region of the second transition. The intermediate resistance states appearing in the asymmetric PHR loop were understood in terms of mutli-domain structures formed during the second switching of magnetization. Such multi-domain structure of the Fe film showing robust time stability provided additional Hall resistance states, which can be used for multi-valued memory device applications.

Coherent magnetization precession in ferromagnetic (Ga,Mn)As induced by picosecond acoustic pulses.

We show that the magnetization of a thin ferromagnetic (Ga,Mn)As layer can be modulated by picosecond acoustic pulses. In this approach a picosecond strain pulse injected into the structure induces a tilt of the magnetization vector M, followed by the precession of M around its equilibrium orientation. This effect can be understood in terms of changes in magnetocrystalline anisotropy induced by the pulse. A model where only one anisotropy constant is affected by the strain pulse provides a good description of the observed time-dependent response.

Origin of magnetic circular dichroism in GaMnAs: giant zeeman splitting versus spin dependent density of states.

We present a unified interpretation of experimentally observed magnetic circular dichroism (MCD) in the ferromagnetic semiconductor (Ga,Mn)As, based on theoretical arguments, which demonstrates that MCD in this material arises primarily from a difference in the density of spin-up and spin-down states in the valence band brought about by the presence of the Mn impurity band, rather than being primarily due to the Zeeman splitting of electronic states.

Observation of insulating nanoislands in ferromagnetic GaMnAs.

Resonant Raman data on ferromagnetic GaMnAs reveal the existence of a new kind of defect: insulating nanoislands consisting of substitutional MnGa acceptors surrounded by interstitial MnI donors. As indicated by the observation of a sharp 1S3/2-->2S3/2 Raman transition at approximately 703 cm(-1), the acceptor-bound holes inside the islands are isolated from the metallic surroundings. Instead, Mn-bound excitons do couple to the ferromagnetic environment, as shown by the presence of associated Raman magnon side bands. This leads to an estimate of 5-10 nm for the nanoisland radius. The islands disappear after annealing due to the removal of the MnI ions.

Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga1-xMnxAs/GaAs:Be.

We report the antiferromagnetic (AFM) interlayer exchange coupling between Ga0.97Mn0.03As ferromagnetic semiconductor layers separated by Be-doped GaAs spacers. Polarized neutron reflectivity reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers is AFM. When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is not observed when the spacers are undoped, suggesting that the observed AFM coupling is mediated by doped charge carriers.

Anomalous hall effect in the (in,mn)sb dilute magnetic semiconductor.

High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall effect. These observations suggest that the anomalous Hall effect in (In,Mn)Sb is an intrinsic property and supports the application of the Berry phase theory for (III,Mn)V semiconductors. We propose a phenomenological description of the anomalous Hall conductivity, based on a field-dependent relative shift of the heavy- and light-hole valence bands and the split-off band.

Ultrafast enhancement of ferromagnetism via photoexcited holes in GaMnAs.

We report on the observation of ultrafast photoenhanced ferromagnetism in GaMnAs. It is manifested as a transient magnetization increase on a 100 ps time scale, after an initial subpicosecond demagnetization. The dynamic magnetization enhancement exhibits a maximum below the Curie temperature T(c) and dominates the demagnetization component when approaching T(c). We attribute the observed ultrafast collective ordering to the p-d exchange interaction between photoexcited holes and Mn spins, leading to a correlation-induced peak around 20 K and a transient increase in T(c).

Stable multidomain structures formed in the process of magnetization reversal in GaMnAs ferromagnetic semiconductor thin films.

The process of magnetization reversal in ferromagnetic Ga(1-x)Mn(x)As epilayers has been systematically investigated using the planar Hall effect (PHE). Interestingly, we have observed a pronounced asymmetry in the PHE hysteresis when the range of the field scan is restricted to fields below the final magnetization transition. The observed behavior indicates that (a) multidomain structures are formed as M undergoes a reorientation, (b) the domain landscape formed in this way remains stable even after the magnetic field is switched off, and (c) the reorientation of magnetization directions corresponding to the transition points in PHE takes place separately within each domain.

Magnetic scattering of spin polarized carriers in (In, Mn)Sb dilute magnetic semiconductor.

Magnetoresistance measurements on the magnetic semiconductor (In, Mn)Sb suggest that magnetic scattering in this material is dominated by isolated Mn2+ ions located outside the ferromagnetically ordered regions when the system is below T(c). A model is proposed, based on the p-d exchange between spin-polarized charge carriers and localized Mn2+ ions, which accounts for the observed behavior both below and above the ferromagnetic phase transition. The suggested picture is further verified by high-pressure experiments, in which the degree of magnetic interaction can be varied in a controlled way.

Electron paramagnetic resonance shift in II1-xMnxVI diluted magnetic semiconductors in the presence of strong exchange coupling.

Electron paramagnetic resonance (EPR) has been investigated in two II1-xMnxVI alloys--Cd1-xMnxSe and Cd1-xMnxS--for a series of high Mn concentrations and at low temperatures T, i.e., under conditions where the spin subsystems in these materials are strongly coupled. We have observed a very significant shift of the resonance field from the EPR position of Mn2+ ions that increases with increasing x and with decreasing T. Furthermore, the use of multiple frequencies has allowed us to attribute the observed shift to an internal field that originates from the spin sublattice within the II1-xMnxVI host.

Pressure-induced ferromagnetism in (In,Mn)Sb dilute magnetic semiconductor.

Recent advances in III(1-x)Mn(x)V ferromagnetic semiconductors (for example in Ga(1-x)Mn(x)As) have demonstrated that electrical control of their spin properties can be used for manipulation and detection of magnetic signals. The Mn(2+) ions in these alloys provide magnetic moments, and at the same time act as a source of valence-band holes that mediate the Mn(2+)-Mn(2+) interactions. This coupling results in the ferromagnetic phase. In earlier workit was shown that the ferromagnetic state can be enhanced or suppressed by varying the carrier density. Here we demonstrate that, by using hydrostatic pressure to continuously tune the wavefunction overlap, one can control the strength of ferromagnetic coupling without any change in the carrier concentration. Tuning the exchange coupling by this process increases the magnetization spectacularly, and can even induce the ferromagnetic phase in an initially paramagnetic alloy. These results may open new directions for strain-engineering of nanodevices.

Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)as wires with nanoconstrictions.

We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel magnetization. All samples exhibit a positive magnetoresistance, consistent with domain-wall trapping. For metallic samples, we find a magnetoresistance up to 8%, which can be understood from spin accumulation. In samples where, due to depletion at the constriction, a tunnel barrier is formed, we observe a magnetoresistance of up to 2000%.

Probing hole-induced ferromagnetic exchange in magnetic semiconductors by inelastic neutron scattering.

The effect of hole doping on the exchange coupling of the nearest neighbor (NN) Mn pairs in Zn(1-x)MnxTe is probed by inelastic neutron scattering. The difference in the NN exchange energy DeltaJ1 in the presence and in the absence of the holes is determined. The obtained value of DeltaJ1 is in good agreement with the predictions of the Zener/RKKY model, even on the insulator side of the metal-insulator transition.