ABSTRACT
Passivation is one of the most promising concepts to heal defects created at the surface and grain boundaries of polycrystalline perovskite thin films, which significantly deteriorate the photovoltaic performance and stability of corresponding devices. Here, 1,10-phenanthroline, known as a bidentate chelating ligand, is implemented between the methylammonium lead iodide (MAPbI3) film and the hole-transport layer for both passivating the lead-based surface defects (undercoordinated lead ions) and converting the excess/unreacted lead iodide (PbI2) buried at interfaces, which is problematic for the long-term stability, into "neutralized" and beneficial species (PbI2(1,10-phen)x, x = 1, 2) for efficient hole transfer at the modified interface. The defect healing ability of 1,10-phenanthroline is verified with a set of complementary techniques including photoluminescence (steady-state and time-resolved), space-charge-limited current (SCLC) measurements, light intensity dependent JV measurements, and Fourier-transform photocurrent spectroscopy (FTPS). In addition to these analytical methods, we employ advanced X-ray scattering techniques, nano-Fourier transform infrared (nano-FTIR) spectroscopy, and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) to further analyze the structure and chemical composition at the perovskite surface after treatment at nanoscale spatial resolution. On the basis of our experimental results, we conclude that 1,10-phenanthroline treatment induces the formation of different morphologies with distinct chemical compositions on the surface of the perovskite film such that surface defects are effectively passivated, and excess/unreacted PbI2 is converted into beneficial complex species at the modified interface. As a result, an improved power conversion efficiency (20.16%) and significantly more stable unencapsulated perovskite solar cells are obtained with the 1,10-phenanthroline treatment compared to the MAPbI3 reference device (18.03%).
ABSTRACT
Organic solar cells (OSCs) recently achieved efficiencies of over 18% and are well on their way to practical applications, but still considerable stability issues need to be overcome. One major problem emerges from the electron transport material zinc oxide (ZnO), which is mainly used in the inverted device architecture and decomposes many high-performance nonfullerene acceptors due to its photocatalytic activity. In this work, we add three different fullerene derivatives-PC71BM, ICMA, and BisPCBM-to an inverted binary PBDB-TF:IT-4F system in order to suppress the photocatalytic degradation of IT-4F on ZnO via the radical scavenging abilities of the fullerenes. We demonstrate that the addition of 5% fullerene not only increases the performance of the binary PBDB-TF:IT-4F system but also significantly improves the device lifetime under UV illumination in an inert atmosphere. While the binary devices lose 20% of their initial efficiency after only 3 h, this time is increased fivefold for the most promising ternary devices with ICMA. We attribute this improvement to a reduced photocatalytic decomposition of IT-4F in the ternary system, which results in a decreased recombination. We propose that the added fullerenes protect the IT-4F by acting as a sacrificial reagent, thereby suppressing the trap state formation. Furthermore, we show that the protective effect of the most promising fullerene ICMA is transferable to two other binary systems PBDB-TF:BTP-4F and PTB7-Th:IT-4F. Importantly, this effect can also increase the air stability of PBDB-TF:IT-4F. This work demonstrates that the addition of fullerene derivatives is a transferable and straightforward strategy to improve the stability of OSCs.
ABSTRACT
Lead halide-based perovskite materials have been applied as an intrinsic layer for next-generation photovoltaic devices. However, the stability and performance reproducibility of perovskite solar cells (PSCs) needs to be further improved to match that of silicon photovoltaic devices before they can be commercialized. One of the major bottlenecks that hinders the improvement of device stability/reproducibility is the additives in the hole-transport layer, lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) and 4- tert-butylpyridine (tBP). Despite the positive effects of these hole-transport layer additives, LiTFSI is hygroscopic and can adsorb moisture to accelerate the perovskite decomposition. On the other hand, tBP, the only liquid component in PSCs, which evaporates easily, is corrosive to perovskite materials. Since 2012, the empirical molar ratio 6:1 tBP:LiTFSI has been wildly applied in PSCs without further concerns. In this study, the formation of tBP-LiTFSI complexes at various molar ratios has been discovered and investigated thoroughly. These complexes in PSCs can alleviate the negative effects (decomposition and corrosion) of individual components tBP and LiTFSI while maintaining their positive effects on perovskite materials. Consequently, a minor change in tBP:LiTFSI ratio results in huge influences on the stability of perovskite. Due to the existence of uncomplexed tBP in the 6:1 tBP:LiTFSI mixture, this empirical tBP-LiTFSI molar ratio has been demonstrated not as the ideal ratio in PSCs. Instead, the 4:1 tBP:LiTFSI mixture, in which all components are complexed, shows all positive effects of the hole-transport layer components with dramatically reduced negative effects. It minimizes the hygroscopicity of LiTFSI, while lowering the evaporation speed and corrosive effect of tBP. As a result, the PSCs fabricated with this tBP:LiTFSI ratio have the highest average device efficiency and obviously decreased efficiency variation with enhanced device stability, which is proposed as the golden ratio in PSCs. Our understanding of interactions between hole-transport layer additives and perovskite on a molecular level shows the pathway to further improve the PSCs' stability and performance reproducibility to make them a step closer to large-scale manufacturing.
