Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature.

We present a new fabrication method of graphene spin-valve devices that yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si(++)/SiO2. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi-, and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10 µm combined with carrier mobilities exceeding 20,000 cm(2)/(V s).

Toward wafer scale fabrication of graphene based spin valve devices.

We demonstrate injection, transport, and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer and bilayer graphene. We observe spin relaxation times comparable to those reported for exfoliated graphene samples demonstrating that chemical vapor deposition specific structural differences such as nanoripples do not limit spin transport in the present samples. Our observations make Cu-CVD graphene a promising material of choice for large scale spintronic applications.

Effects of Cu dilution in IrMn on the exchange bias of CoFe/IrMn bilayers.

The effect of nonmagnetic dilution in metallic antiferromagnets (AFMs) on the exchange bias (EB) has been investigated from a structural, magnetic, and Monte Carlo simulation point of view in bilayers of CoFe/(IrMn)1-xCux. Dilution by Cu atoms throughout the volume of the AFM IrMn gives rise to an enhanced EB field (HEB) for 5 K