ABSTRACT
High quality Ge doping of GaN is demonstrated using primarily thermal neutrons for the first time. In this study, GaN was doped with Ge to concentrations from 1016 Ge atoms/cm3 to 1018 Ge atoms/cm3. The doping concentrations were measured using gamma-ray spectroscopy and confirmed using SIMS analysis. The data from SIMS analysis also show consistent Ge doping concentration throughout the depth of the GaN wafers. After irradiation, the GaN was annealed in a nitrogen environment at 950 °C for 30 min. The neutron doping process turns out to produce spatially uniform doping throughout the whole volume of the GaN substrate.
ABSTRACT
Increasing performance of vacuum insulator barriers is a common goal in pulsed power. Insulating performance is continually being improved while new methods are developed. Triple point shielding techniques have been shown to increase flashover voltage, but the role of cathode versus anode shielding is still not fully understood. Open circuit flashover characteristics were obtained for a coaxial geometry to view the effects of triple point shielding for this geometry. The tests included applying various combinations of triple point shields on zero and +45 degrees insulators. Shielding was tested at the cathode triple point outside of the dielectric and at the anode triple point inside the dielectric. The role of anode versus cathode triple point shielding was examined. Flashover voltage was observed to increase when either a cathode or anode triple point shield was applied; however, adding a shield to both regions lowered the flashover threshold. Both triple point regions were found to be important and dependent on each other for some coaxial geometries.
