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1.
Nanoscale ; 9(32): 11463-11474, 2017 Aug 17.
Article in English | MEDLINE | ID: mdl-28580975

ABSTRACT

We report the discovery of remarkable photo-physical phenomena with characteristics unique to epitaxial graphene grown on 6H-SiC (000-1). Surprisingly, the electrical resistance of graphene increases under light illumination in contrast to conventional materials where it normally decreases. The resistance shows logarithmic temperature dependences which may be attributed to an Altshuler-Aronov effect. We show that the photoresistance depends on the frequency of the irradiating light, with three lasers (red, green, and violet) used to demonstrate the phenomenon. The counterintuitive rise of the positive photoresistance may be attributed to a creation of trapped charges upon irradiation. We argue that the origin of the photoresistance is related to the texture formed by the graphene flakes. Photovoltage also exists and increases with light intensity. However, its value saturates quickly with irradiation and does not change with time. The saturation of the photovoltage may be associated with the formation of a quasi-equilibrium state of the excited electrons and holes associated with a charge redistribution between the graphene and SiC substrate. The obtained physical picture is in agreement with the photoresistance measurements: X-ray photoelectron spectrometry "XPS", atomic force microscopy "AFM", Raman spectroscopy and the magnetic dependence of photoresistance decay measurements. We also observed non-decaying photoresistance and linear magnetoresistance in magnetic fields up to 1 T. We argue that this is due to topological phases spontaneously induced by persistent current formation within the graphene flake edges by magnetic fields.

2.
Phys Rev Lett ; 112(11): 116603, 2014 Mar 21.
Article in English | MEDLINE | ID: mdl-24702398

ABSTRACT

We investigate the effects of a linear resonator on the high-frequency dynamics of electrons in devices exhibiting negative differential conductance. We show that the resonator strongly affects both the dc and ac transport characteristics of the device, inducing quasiperiodic and high-frequency chaotic current oscillations. The theoretical findings are confirmed by experimental measurements of a GaAs/AlAs miniband semiconductor superlattice coupled to a linear microstrip resonator. Our results are applicable to other active solid state devices and provide a generic approach for developing modern chaos-based high-frequency technologies including broadband chaotic wireless communication and superfast random-number generation.

3.
Phys Rev Lett ; 109(2): 024102, 2012 Jul 13.
Article in English | MEDLINE | ID: mdl-23030163

ABSTRACT

We demonstrate, through experiment and theory, enhanced high-frequency current oscillations due to magnetically-induced conduction resonances in superlattices. Strong increase in the ac power originates from complex single-electron dynamics, characterized by abrupt resonant transitions between unbound and localized trajectories, which trigger and shape propagating charge domains. Our data demonstrate that external fields can tune the collective behavior of quantum particles by imprinting configurable patterns in the single-particle classical phase space.

4.
Phys Rev Lett ; 99(20): 207003, 2007 Nov 16.
Article in English | MEDLINE | ID: mdl-18233180

ABSTRACT

All devices realized so far that control the motion of magnetic flux quanta employ either samples with nanofabricated spatially-asymmetric potentials (which strongly limit controllability), or pristine superconductors rectifying with low-efficiency time-asymmetric oscillations of an external magnetic field. Using layered Bi2Sr2CaCu2O8+delta materials, here we fabricate and simulate two efficient nonlinear superconducting devices with no spatial asymmetry. These devices can rectify with high-efficiency a two-harmonic external current dragging vortices in target directions by changing either the relative phase or the frequency ratio of the two harmonics.

5.
Phys Rev Lett ; 87(24): 247007, 2001 Dec 10.
Article in English | MEDLINE | ID: mdl-11736536

ABSTRACT

We report the first observation of Shapiro steps in the Josephson flux flow state of Bi2Sr2CaCu2O8+delta stacked junctions. When the junction is irradiated at microwave frequencies in a strong parallel magnetic field ( H> or =1 T), a steep increase of the current is observed in the dc current-voltage characteristics when the external microwave frequency and the Josephson frequency are harmonically related. The existence of Shapiro steps in the Josephson flux flow state is strong evidence of coherent motion of the Josephson vortex lattice through the whole thickness of the stack.

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