Ultra-broadband on-chip power splitters for arbitrary ratios on silicon-on-insulator.

We propose and demonstrate on-chip power splitters based on adiabatic rib waveguide enabling arbitrary splitting ratios on a monolithic silicon photonic platform. The devices are elaborately engineered based on adiabatic directional couplers with a trapezoid-structure in the longitudinal direction in the mode evolution region. The measurement results indicate that the proposed devices can achieve over 150 nm bandwidth for arbitrary splitting ratios of 50%:50%, 70%:30% and 90%:10%. The mode evolution footprint is greatly narrowed to below 79 µm with an insertion loss of less than 0.22 dB. The demonstrated arbitrary ratio power splitters offer a promising application prospect in high-density photonic integrated circuits.

Non-volatile 2 × 2 optical switch using multimode interference in an Sb2Se3-loaded waveguide.

We propose a non-volatile 2 × 2 photonic switch based on multimode interference in an Sb2Se3-loaded waveguide. The different modal symmetries of the TE0 and TE1 modes supported in the multimode region change their propagation constants distinctly upon the Sb2Se3 phase transition. Through careful optical design and FDTD optimization of the multimode waveguide dimensions, efficient switching is achieved despite the modest index contrast of Sb2Se3 relative to Ge2Sb2Te5. The fabricated optical switch demonstrates favorable characteristics, including low insertion loss of ∼1 dB, a compact length of ∼27 µm, and small cross talk below -15 dB across a 35 nm bandwidth. Such non-volatile and broadband components will be critical for future high-density programmable photonic-integrated circuits for optical communications and signal processing.

X-Intersected Silicon Modulator of Well-Rounded Performance.

In silicon modulator design, implantation is always a key factor, significantly influencing the doping profile and carrier distribution. As waveguide doping is limited by the compact footprint of the modulator rib, three-dimensional complex optimization is a viable option to improve performance. This work proposes an X-intersected modulator based on two inversely slanted junctions using the effective 3D Monte Carlo method for junction generation. The optimized results show that the modulation efficiency of the design is 1.09 V·cm, while the loss is 18 dB/cm, and the 3 dB bandwidth reaches over 35 GHz owing to the decreased resistance and capacitance of the 3D junction. This work demonstrates the benefits of 3D doping design in silicon modulators, contributing to higher efficiency and avoiding additional PN overlap to introduce lower capacitance. The design of 3D doping profiles well balances the DC and AC performance, and provides novel modulator solutions for high-speed datacom.

High-efficiency and CMOS compatible out-of-plane light emission based on a silicon coupler.

Photonic antennas are critical in applications such as spectroscopy, photovoltaics, optical communications, holography, and sensors. Metal antennas are widely used because of their small size, but they are difficult to be compatible with a CMOS. All-dielectric antennas are easier to integrate with Si waveguides, but are generally larger in size. In this paper, we propose the design of a small-sized, high-efficiency semicircular dielectric grating antenna. The antenna's key size is only 2.37µm×4.74µm, and the emission efficiency reaches over 64% in the wavelength range from 1.16 to 1.61 µm. The antenna provides a new, to the best of our knowledge, approach for three-dimensional optical interconnections between different decks of integrated photonic circuits.

High resolution, high channel count silicon arrayed waveguide grating router on-chip.

A 32×32 100 GHz silicon photonic integrated arrayed waveguide grating router (AWGR) is experimentally demonstrated for dense wavelength division multiplexing (DWDM) applications. The dimension of the AWGR is 2.57 mm×1.09 mm with a core size of 1.31 mm×0.64 mm. It exhibits 6.07 dB maximum channel loss non-uniformity with -1.66 dB best-case insertion loss and average channel crosstalk of -15.74 dB. In addition, in the case of 25 Gb/s signals, the device successfully realizes high-speed data routing. The AWG router provides clear optical eye diagrams and low power penalty at bit-error-rates of 10-9.

Compact, ultrabroadband and temperature-insensitive arbitrary ratio power splitter based on adiabatic rib waveguides.

We propose a compact, ultrabroadband and temperature-insensitive adiabatic directional coupler based on rib silicon waveguide-enabling arbitrary splitting ratios. Simulation results show that the device can achieve arbitrary splitting ratios from 1400 to 1600 nm, equal to 50%:50%, 60%:40%, 70%:30%, 80%:20%, and 90%:10% for the fundamental transverse electric mode. The designed device has an excess loss of less than 0.19 dB on the operational waveband. Furthermore, the proposed device shows a great robustness to fabrication imperfection, with a waveguide width deviation of 50 nm and ambient temperature change from 0°C to 200°C. These properties make the design a potential candidate for ultrahigh-density photonic integration chips.

Silicon modulator based on omni junctions by effective 3D Monte-Carlo method.

3D doping structure has significant advantages in modulation efficiency and loss compared with 2D modulator doping profiles. However, to the best of our knowledge, previous work on 3D simulation methods for interdigitated doping designs applied simplified models, which prohibited complex 3D doping. In this work, innovative omni junctions, based on the effective 3D Monte-Carlo method, are believed to be the first proposed for high-performance modulators. Simulation results show that the modulation efficiency reaches 0.88 V·cm, while the loss is only 16 dB/cm, with capacitance below 0.42 pF/mm. This work provides a modulator design with superior modulation efficiency and serviceability for high-speed datacom.

Broadband and CMOS compatible polarization splitter-rotator based on a bi-level taper.

A silicon-on-insulator polarization diversity scheme is proposed. Based on an asymmetrical evanescent coupler, a broadband and compact polarization splitter-rotator comprising mode conversion tapers and mode sorting asymmetric Y junctions is optimized with silicon dioxide upper cladding and a silicon nitride waveguide. The simulation results show mode conversion loss is less than 0.2 dB, and the extinction ratio is lower than -17dB in the wavelength range of 1.48µm to 1.67µm.

Compact, broadband, and low-loss silicon photonic arbitrary ratio power splitter using adiabatic taper.

The arbitrary ratio power splitter is widely used in photonic integrated circuits (PICs), for signal monitoring, power equalization, signal feedback, and so on. Here we designed a fabrication-tolerant, compact, broadband, and low-loss arbitrary ratio power splitter. The proposed arbitrary ratio power splitter was realized with an adiabatically tapered silicon rib waveguide with 70 nm shallow etches and an Si3N4 waveguide. The fabrication analysis confirmed that both of them are robust to fabrication errors. 3D finite-difference time-domain simulations show a very low excess loss (less than 0.02 dB for Si3N4 waveguide and 0.05 dB for Si rib waveguide), and a broadband operating wavelength range (100 nm). Good fabrication tolerance and standard critical dimensions make the arbitrary ratio power splitter compatible with the standard fabrication process of commercial silicon photonic foundries.

Compact multimode waveguide based temperature-insensitive Mach-Zehnder interferometer.

A novel multimode waveguide based Mach-Zehnder interferometer (MZI) is demonstrated on an SOI platform with the properties of compact footprint and temperature-insensitive operation. The device can achieve a thermal dependence around 13pm/°C in a wavelength range of 40nm. Owing to the utilization of one single straight multimode waveguide, the device is naturally immune to local temperature distributions. The measured results exhibit transmissions with an extinction ratio better than 8dB and a minimum insertion loss lower than 0.31dB over the wavelength range of 1545nm-1585nm. Moreover, the proposed device is compatible with CMOS process.

A Simplified Solution Using Izbash's Equation for Non-Darcian Flow in a Constant Rate Pumping Test.

This paper derives an equivalent of Darcian Theis solution for non-Darcian flow induced by constant rate pumping of a well in a confined aquifer. The derivation, which is valid at later times only, is original. It utilizes Izbash's equation. This introduces an additional parameter to Darcian condition, namely, empirical exponent. The solution is a non-Drcian equivalent of Jacob straight line method for analyzing pumping tests at late times. It can be used to determine aquifer parameters: storativity, analogous hydraulic conductivity, and empirical exponent. However, while the Jacob method requires a minimum of only one pumping test with one observation well, the additional parameter in the present solution means that a minimum of two observation wells in one test or two pumping tests at different rates with one observation well are required. The derived solution is applied to a case study at Plomeur in Brittany, France, and is shown to provide a practical and efficient method for analyzing pumping tests where non-Darcian groundwater flow occurs.

Analyzing modal power in multi-mode waveguide via machine learning.

A machine learning assisted modal power analyzing scheme designed for optical modes in integrated multi-mode waveguides is proposed and studied in this work. Convolutional neural networks (CNNs) are successfully trained to correlate the far-field diffraction intensity patterns of a superposition of multiple waveguide modes with its modal power distribution. In particular, a specialized CNN is trained to analyze thin optical waveguides, which are single-moded along one axis and multi-moded along the other axis. A full-scale CNN is also trained to cross-validate the results obtained from this specialized CNN model. Prediction accuracy for modal power is benchmarked statistically with square error and absolute error distribution. It is found that the overall accuracy of our trained specialized CNN is very satisfactory for thin optical waveguides while that of our trained full-scale CNN remains nearly unchanged but the training time doubles. This approach is further generalized and applied to a waveguide that is multi-moded along both horizontal and vertical axes and the influence of noise on our trained network is studied. Overall, we find that the performance in this general condition keeps nearly unchanged. This new concept of analyzing modal power may open the door for high fidelity information recovery in far field and holds great promise for potential applications in both integrated and fiber-based spatial-division demultiplexing.

Routing light with ultrathin nanostructures beyond the diffraction limit.

An open nanostructure consisting of a periodic chain of subwavelength-nanoparticles for compressing and routing light beyond the diffraction limit is proposed. The open nanostructure is ultrathin and compact, with a size much smaller than the wavelength of light. We demonstrate that our ultrathin open nanostructure provides functions that can route and manipulate light at the subwavelength scale and can also sharply bend and split light beams below the diffraction limit while exhibiting broadband, incident-angle-tolerant, and robust against disorder. A physical picture based on all-angle self-collimation is presented to understand the manipulation of light using the ultrathin open nanostructure. Experimental and numerical observations validate our findings. This approach provides great flexibility in the design of nanophotonic devices for routing and manipulating light beyond the diffraction limit.

A silicon-on-insulator polarization diversity scheme in the mid-infrared.

We propose a silicon-on-insulator (SOI) polarization diversity scheme in the mid-infrared wavelength range. In consideration of absorption loss in silicon dioxide (SiO2), the polarization splitter-rotator (PSR) is designed and optimized with silicon nitride (SiN) upper-cladding and SiO2 lower-cladding. This asymmetry allows the PSR, which consists of mode-conversion tapers and subsequent mode-sorting asymmetric Y-junctions, to be fabricated with a simple one-step etching process. Simulation shows that our PSR has good performance with low mode conversion loss (< 0.25 dB) and low crosstalk (< -18 dB) in a very large wavelength range from 4.0 µm to 4.4 µm. The PSR also exhibits large fabrication tolerance with respect to the size deviations in waveguide width, height and refractive index of the upper-cladding. Additionally, PSR devices based on Y-junctions with SiO2 upper-cladding, and SiN upper- and lower-claddings are designed for potential applications at shorter and longer wavelengths, respectively. These PSR devices could facilitate the development of silicon photonic devices in the mid-infrared.

Broadband and fabrication-tolerant on-chip scalable mode-division multiplexing based on mode-evolution counter-tapered couplers.

A broadband and fabrication-tolerant on-chip scalable mode-division multiplexing (MDM) scheme based on mode-evolution counter-tapered couplers is designed and experimentally demonstrated on a silicon-on-insulator (SOI) platform. Due to the broadband advantage offered by mode evolution, the two-mode MDM link exhibits a very large, -1 dB bandwidth of >180 nm, which is considerably larger than most of the previously reported MDM links whether they are based on mode-interference or evolution. In addition, the performance metrics remain stable for large-device width deviations from the designed valued by -60 nm to 40 nm, and for temperature variations from -25°C to 75°C. This MDM scheme can be readily extended to higher-order mode multiplexing and a three-mode MDM link is measured with less than -10 dB crosstalk from 1.46 to 1.64 µm wavelength range.

Experimental demonstration of in-plane negative-angle refraction with an array of silicon nanoposts.

Controlling an optical beam is fundamental in optics. Recently, unique manipulation of optical wavefronts has been successfully demonstrated by metasurfaces. However, these artificially engineered nanostructures have thus far been limited to operate on light beams propagating out-of-plane. The in-plane operation is critical for on-chip photonic applications. Here, we demonstrate an anomalous negative-angle refraction of a light beam propagating along the plane, by designing a thin dielectric array of silicon nanoposts. The circularly polarized dipoles induced by the high-permittivity nanoposts at the scattering resonance significantly shape the wavefront of the light beam and bend it anomalously. The unique capability of a thin line of the nanoposts for manipulating in-plane wavefronts makes the device extremely compact. The low loss all-dielectric structure is compatible with complementary metal-oxide semiconductor technologies, offering an effective solution for in-plane beam steering and routing for on-chip photonics.

Reconfigurable radio-frequency arbitrary waveforms synthesized in a silicon photonic chip.

Photonic methods of radio-frequency waveform generation and processing can provide performance advantages and flexibility over electronic methods due to the ultrawide bandwidth offered by the optical carriers. However, bulk optics implementations suffer from the lack of integration and slow reconfiguration speed. Here we propose an architecture of integrated photonic radio-frequency generation and processing and implement it on a silicon chip fabricated in a semiconductor manufacturing foundry. Our device can generate programmable radio-frequency bursts or continuous waveforms with only the light source, electrical drives/controls and detectors being off-chip. It modulates an individual pulse in a radio-frequency burst within 4 ns, achieving a reconfiguration speed three orders of magnitude faster than thermal tuning. The on-chip optical delay elements offer an integrated approach to accurately manipulating individual radio-frequency waveform features without constraints set by the speed and timing jitter of electronics, and should find applications ranging from high-speed wireless to defence electronics.

Proposal for fabrication-tolerant SOI polarization splitter-rotator based on cascaded MMI couplers and an assisted bi-level taper.

A novel silicon-on-insulator (SOI) polarization splitter-rotator (PSR) with a large fabrication tolerance is proposed based on cascaded multimode interference (MMI) couplers and an assisted mode-evolution taper. The tapers are designed to adiabatically convert the input TM(0) mode into the TE(1) mode, which will output as the TE(0) mode after processed by the subsequent MMI mode converter, 90-degree phase shifter (PS) and MMI 3 dB coupler. The numerical simulation results show that the proposed device has a < 0.5 dB insertion loss with < -17 dB crosstalk in C optical communication band. Fabrication tolerance analysis is also performed with respect to the deviations of MMI coupler width, PS width, slab height and upper-cladding refractive index, showing that this device could work well even when affected by considerable fabrication errors. With such a robust performance with a large bandwidth, this device offers potential applications for CMOS-compatible polarization diversity, especially in the booming 100 Gb/s coherent optical communications based on silicon photonics technology.

Novel ultra-broadband polarization splitter-rotator based on mode-evolution tapers and a mode-sorting asymmetric Y-junction.

A novel silicon-on-insulator (SOI) polarization splitter-rotator is proposed based on mode-evolution tapers and a mode-sorting asymmetric Y-junction. The tapers are designed to adiabatically convert the input TM0 mode into the TE1 mode, which will evolve into the TE0 mode in the wide output arm while the input TE0 mode excites the TE0 mode in the narrow arm. The numerical simulation results show that the mode conversion efficiency increases with the lengths of the tapers and the Y-junction for the output waveguide widths in a large range. This proposed device has < 0.4 dB insertion loss with > 12 dB extinction ratio in an ultra-broad wavelength range from 1350 nm to 1750 nm. With such a broad operating bandwidth, this device offers potential applications for polarization diversity operating across every communication bands. Fabrication tolerance analysis is also performed in terms of the device width variation, the slab height variation and the variation of the upper-cladding refractive index.

Low-loss and low-crosstalk 8 × 8 silicon nanowire AWG routers fabricated with CMOS technology.

Low-loss and low-crosstalk 8 × 8 arrayed waveguide grating (AWG) routers based on silicon nanowire waveguides are reported. A comparative study of the measurement results of the 3.2 nm-channel-spacing AWGs with three different designs is performed to evaluate the effect of each optimal technique, showing that a comprehensive optimization technique is more effective to improve the device performance than a single optimization. Based on the comprehensive optimal design, we further design and experimentally demonstrate a new 8-channel 0.8 nm-channel-spacing silicon AWG router for dense wavelength division multiplexing (DWDM) application with 130 nm CMOS technology. The AWG router with a channel spacing of 3.2 nm (resp. 0.8 nm) exhibits low insertion loss of 2.32 dB (resp. 2.92 dB) and low crosstalk of -20.5~-24.5 dB (resp. -16.9~-17.8 dB). In addition, sophisticated measurements are presented including all-input transmission testing and high-speed WDM system demonstrations for these routers. The functionality of the Si nanowire AWG as a router is characterized and a good cyclic rotation property is demonstrated. Moreover, we test the optical eye diagrams and bit-error-rates (BER) of the de-multiplexed signal when the multi-wavelength high-speed signals are launched into the AWG routers in a system experiment. Clear optical eye diagrams and low power penalty from the system point of view are achieved thanks to the low crosstalk of the AWG devices.