Carbon nanotubes for polarization sensitive terahertz plasmonic interferometry.

We report on helicity sensitive photovoltaic terahertz radiation response of a carbon nanotube made in a configuration of a field-effect transistor. We find that the magnitude of the rectified voltage is different for clockwise and anticlockwise circularly polarized radiation. We demonstrate that this effect is a fingerprint of the plasma waves interference in the transistor channel. We also find that the presence of the helicity- and phase-sensitive interference part of the photovoltaic response is a universal phenomenon which is obtained in the systems of different dimensionality with different single-particle spectrum. Its magnitude is a characteristic of the plasma wave decay length. This opens up a wide avenue for applications in the area of plasmonic interferometry.

Impact Ionization Induced by Terahertz Radiation in HgTe Quantum Wells of Critical Thickness.

We report on the observation of terahertz (THz) radiation induced band-to-band impact ionization in HgTe quantum well (QW) structures of critical thickness, which are characterized by a nearly linear energy dispersion. The THz electric field drives the carriers initializing electron-hole pair generation. The carrier multiplication is observed for photon energies less than the energy gap under the condition that the product of the radiation angular frequency ω and momentum relaxation time τ l larger than unity. In this case, the charge carriers acquire high energies solely because of collisions in the presence of a high-frequency electric field. The developed microscopic theory shows that the probability of the light-induced impact ionization is proportional to exp ( - E 0 2 / E 2 ) , with the radiation electric field amplitude E and the characteristic field parameter E 0. As observed in experiment, it exhibits a strong frequency dependence for ω τ ≫ 1 characterized by the characteristic field E 0 linearly increasing with the radiation frequency ω.

Detection of pulsed blood flow through a molar pulp chamber and surrounding tissue in vitro.

OBJECTIVES: Due to severe limitations of dental pulp sensitivity tests, the direct recording of pulsed blood flow, using photoplethysmography (PPG), has been proposed. In vivo evaluation is methodologically difficult and in vitro models have hitherto been adversely influenced by shortcomings in emulating the in vivo situation. Consequently, the aim of this study was to test an improved data acquisition system and to use this configuration for recording pulsed blood in a new model. MATERIALS AND METHODS: We introduced a PPG signal detection system by recording signals under different blood flow conditions at two wavelengths (625 and 940 nm). Pulsed blood flow signals were measured using an in vitro model, containing a molar with a glass pulp and a resin socket, which closely resembled in vivo conditions with regard to volumetric blood flow, pulp anatomy, and surrounding tissue. RESULTS: The detection system showed improved signal strength without stronger blanketing of noise. On the tooth surface, it was possible to detect signals emanating from pulsed blood flow from the glass pulp and from surrounding tissue at 625 nm. At 940 nm, pulp derived signals were recorded, without interference signals from surrounding tissue. CONCLUSION: The PPG-based method has the potential to detect pulsed blood flow in small volumes in the pulp and (at 625 nm) also in adjacent tissues. CLINICAL RELEVANCE: The results show the need for clear differentiation of the spatial origins of blood flow signals of any vitality test method to be applied to teeth.

Detection of highly conductive surface electron states in topological crystalline insulators Pb(1-x)SnxSe using laser terahertz radiation.

We suggest a method for detection of highly conductive surface electron states including topological ones. The method is based on measurements of the photoelectromagnetic effect using terahertz laser pulses. In contrast to conventional transport measurements, the method is not sensitive to the bulk conductivity. The method is demonstrated on an example of topological crystalline insulators Pb(1-x)SnxSe. It is shown that highly conductive surface electron states are present in Pb(1-x)SnxSe both in the inverse and direct electron energy spectrum.

Room-temperature high-frequency transport of dirac fermions in epitaxially grown Sb2Te3- and Bi2Te3-based topological insulators.

We report on the observation of photogalvanic effects in epitaxially grown Sb2Te3 and Bi2Te3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac fermions driven back and forth by the terahertz electric field results in a dc electric current. Because of the "symmetry filtration" the dc current is generated by the surface electrons only and provides an optoelectronic access to probe the electron transport in TI, surface domains orientation, and details of electron scattering in 3D TI even at room temperature.

Magnetic quantum ratchet effect in Si-MOSFETs.

We report on the observation of magnetic quantum ratchet effect in metal-oxide semiconductor field-effect-transistors on silicon surface (Si-MOSFETs). We show that the excitation of an unbiased transistor by ac electric field of terahertz radiation at normal incidence leads to a direct electric current between the source and drain contacts if the transistor is subjected to an in-plane magnetic field. The current rises linearly with the magnetic field strength and quadratically with the ac electric field amplitude. It depends on the polarization state of the ac field and can be induced by both linearly and circularly polarized radiation. We present the quasi-classical and quantum theories of the observed effect and show that the current originates from the Lorentz force acting upon carriers in asymmetric inversion channels of the transistors.

In vitro optical detection of simulated blood pulse in a human tooth pulp model.

OBJECTIVE: Noninvasive optical methods such as photoplethysmography, established for blood pulse detection in organs, have been proposed for vitality testing of human dental pulp. However, no information is available on the mechanism of action in a closed pulp chamber and on the impairing influence of other than pulpal blood flow sources. Therefore, the aim of the present in vitro study was to develop a device for the optical detection of pulpal blood pulse and to investigate the influence of different parameters (including gingival blood flow [GBF] simulation) on the derived signals. MATERIALS AND METHODS: Air, Millipore water, human erythrocyte suspensions (HES), non-particulate hemoglobin suspension (NPHS), and lysed hemoglobin suspension (LHES) were pulsed through a flexible (silicone) or a rigid (glass) tube placed within an extracted human molar in a tooth-gingiva model. HES was additionally pulsed through a rigid tube around the tooth, simulating GBF alone or combined with the flow through the tooth by two separate peristaltic pumps. Light from high-power light-emitting diodes (625 nm (red) and 940 nm (infrared [IR]); Golden Dragon, Osram, Germany) was introduced to the coronal/buccal part of the tooth, and the signal amplitude [∆U, in volts] of transmitted light was detected by a sensor at the opposite side of the tooth. Signal processing was carried out by means of a newly developed blood pulse detector. Finally, experiments were repeated with the application of rubber dam (blue, purple, pink, and black), aluminum foil, and black antistatic plastic foil. Nonparametric statistical analysis was applied (n = 5; α = 0.05). RESULTS: Signals were obtained for HES and LHES, but not with air, Millipore water, or NPHS. Using a flexible tube, signals for HES were higher for IR compared to red light, whereas for the rigid tube, the signals were significantly higher for red light than for IR. In general, significantly less signal amplitude was recorded for HES with the rigid glass tube than with the flexible tube, but it was still enough to be detected. ∆U from gingiva compared to tooth was significantly lower for red light and higher for IR. Shielding the gingiva was effective for 940 nm light and negligible for 625 nm light. CONCLUSIONS: Pulpal blood pulse can be optically detected in a rigid environment such as a pulp chamber, but GBF may interfere with the signal and the shielding effect of the rubber dam depends on the light wavelength used. CLINICAL RELEVANCE: The optically based recording of blood pulse may be a suitable method for pulp vitality testing, if improvements in the differentiation between different sources of blood pulse are possible.

Magnetic quantum ratchet effect in graphene.

A periodically driven system with spatial asymmetry can exhibit a directed motion facilitated by thermal or quantum fluctuations. This so-called ratchet effect has fascinating ramifications in engineering and natural sciences. Graphene is nominally a symmetric system. Driven by a periodic electric field, no directed electric current should flow. However, if the graphene has lost its spatial symmetry due to its substrate or adatoms, an electronic ratchet motion can arise. We report an experimental demonstration of such an electronic ratchet in graphene layers, proving the underlying spatial asymmetry. The orbital asymmetry of the Dirac fermions is induced by an in-plane magnetic field, whereas the periodic driving comes from terahertz radiation. The resulting magnetic quantum ratchet transforms the a.c. power into a d.c. current, extracting work from the out-of-equilibrium electrons driven by undirected periodic forces. The observation of ratchet transport in this purest possible two-dimensional system indicates that the orbital effects may appear and be substantial in other two-dimensional crystals such as boron nitride, molybdenum dichalcogenides and related heterostructures. The measurable orbital effects in the presence of an in-plane magnetic field provide strong evidence for the existence of structure inversion asymmetry in graphene.

Terahertz radiation driven chiral edge currents in graphene.

We observe photocurrents induced in single-layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left to right handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory based on Boltzmann's kinetic equation is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity.

Dynamic Hall effect driven by circularly polarized light in a graphene layer.

We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates--under oblique incidence--an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. Alike the classical dc Hall effect, the voltage is caused by crossed E and B fields which are, however rotating with the light's frequency.

Orbital photogalvanic effects in quantum-confined structures.

We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behaviour upon variation of the radiation polarization state, wavelength, gate voltage, and temperature is studied. We present the microscopic and phenomenological theory of the photogalvanic effects, which describes well the experimental results. In particular, it is demonstrated that the circular (photon-helicity sensitive) photocurrent in silicon-based structures is of pure orbital nature originating from the quantum interference of different pathways contributing to the absorption of monochromatic radiation.

Ratchet effects induced by terahertz radiation in heterostructures with a lateral periodic potential.

We report on the observation of the Seebeck ratchet effect. The effect is measured in semiconductor heterostructures with a one-dimensional lateral potential excited by terahertz radiation. The photocurrent generation is based on the combined action of a spatially periodic in-plane potential and a spatially modulated light, which gives rise to a modulation of the local temperature. In addition to the polarization-independent current due to the Seebeck ratchet effect, we observe a photon helicity dependent response and propose a microscopic mechanism to interpret the experimental findings.

Spin currents in diluted magnetic semiconductors.

We study zero-bias spin separation in (Cd,Mn)Te/(Cd,Mg)Te diluted magnetic semiconductor structures. The spin current generated by electron gas heating under terahertz radiation is converted into a net electric current by applying an external magnetic field. The experiments show that the spin polarization of the magnetic ion system enhances drastically the conversion process due to giant Zeeman splitting of the conduction band and spin-dependent electron scattering on localized Mn(2+) ions.

Symmetry and spin dephasing in (110)-grown quantum wells.

Symmetry and spin dephasing in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect and time-resolved Kerr rotation. We show that magnetic field induced photogalvanic effect provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in the latter case the spin relaxation time is maximal; therefore, these structures set the upper limit of spin dephasing in GaAs QWs. We also demonstrate that structure inversion asymmetry can be controllably tuned to zero by variation of delta-doping layer positions.

Experimental separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells.

The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well (QW) structures are extracted from photocurrent measurements on n-type InAs QWs containing a two-dimensional electron gas (2DEG). This novel technique makes use of the angular distribution of the spin-galvanic effect at certain directions of spin orientation in the plane of a QW. The ratio of the relevant Rashba and Dresselhaus coefficients can be deduced directly from experiment and does not relay on theoretically obtained quantities. Thus our experiments open a new way to determine the different contributions to spin-orbit coupling.

Tunneling processes induced by terahertz electric fields.

Tunneling processes induced by terahertz frequency electric fields havebeen investigated.A drastic enhancement of the tunneling probabilityhas been observed by increasing the frequency ω atωτ(e)≫ 1 whereτ(e) is the tunneling time.For a given constant tunneling rate an increase offrequency by a factor of seven leads to a drop of the requiredelectric field strengthby three orders of magnitude.It is shown that the enhancement of tunneling ionization at terahertz frequencies is due to the factthat electrons can absorb energy from the radiation field during tunnelingreducing the effective width of the tunneling barrier.

Spin-galvanic effect.

There is much recent interest in exploiting the spin of conduction electrons in semiconductor heterostructures together with their charge to realize new device concepts. Electrical currents are usually generated by electric or magnetic fields, or by gradients of, for example, carrier concentration or temperature. The electron spin in a spin-polarized electron gas can, in principle, also drive an electrical current, even at room temperature, if some general symmetry requirements are met. Here we demonstrate such a 'spin-galvanic' effect in semiconductor heterostructures, induced by a non-equilibrium, but uniform population of electron spins. The microscopic origin for this effect is that the two electronic sub-bands for spin-up and spin-down electrons are shifted in momentum space and, although the electron distribution in each sub-band is symmetric, there is an inherent asymmetry in the spin-flip scattering events between the two sub-bands. The resulting current flow has been detected by applying a magnetic field to rotate an optically oriented non-equilibrium spin polarization in the direction of the sample plane. In contrast to previous experiments, where spin-polarized currents were driven by electric fields in semiconductor, we have here the complementary situation where electron spins drive a current without the need of an external electric field.

Spin-sensitive bleaching and monopolar spin orientation in quantum wells.

Spin-sensitive bleaching of the absorption of far-infrared radiation has been observed in p-type GaAs/AlGaAs quantum well structures. The absorption of circularly polarized radiation saturates at lower intensities than that of linearly polarized light due to monopolar spin orientation in the first heavy-hole subband. Spin relaxation times of holes in p-type material in the range of tens of ps were derived from the intensity dependence of the absorption.

Conversion of spin into directed electric current in quantum wells.

A nonequilibrium population of spin-up and spin-down states in quantum well structures has been achieved applying circularly polarized radiation. The spin polarization results in a directed motion of free carriers in the plane of a quantum well perpendicular to the direction of light propagation. Because of the spin selection rules the direction of the current is determined by the helicity of the light and can be reversed by switching the helicity from right to left handed. A microscopic model is presented which describes the origin of the photon helicity driven current. The model suggests that the system behaves as a battery which generates a spin polarized current.

Pattern formation in semiconductors.

In semiconductors, nonlinear generation and recombination processes of free carriers and nonlinear charge transport can give rise to non-equilibrium phase transitions, . At low temperatures, the basic nonlinearity is due to the autocatalytic generation of free carriers by impact ionization of shallow impurities. The electric field accelerates free electrons, causing an abrupt increase in free carrier density at a critical electric field. In static electric fields, this nonlinearity is known to yield complex filamentary current patterns bound to electric contacts.