ABSTRACT
InGaN/GaN multiple quantum well (MQW) diodes perform multiple functions, such as optical emission, modulation and reception. In particular, the partially overlapping spectral region between the electroluminescence (EL) and responsivity spectra of each diode results in each diode being able to sense light from another diode of the same MQW structure. Here, we present a noncontact, optical proximity sensing system by integrating an MQW-based light transmitter and detector into a tiny GaN-on-sapphire chip. Changes in the external environment modulate the light emitted from the transmitter. Reflected light is received by the on-chip MQW detector, wherein the carried external modulation information is converted into electrical signals that can be extracted. The maximum detection proximity is approximately 17 mm, and the displacement detection accuracy is within 1 mm. Based on the detection of distance, we extend the application of the sensor to vibration and pressure detection. This monolithic integration design can replace external discrete light transmitter and detector systems to miniaturize reflective sensor architectures, enabling the development of novel optical sensors.
ABSTRACT
Light-emitting diodes (LEDs), pivotal for solid-state illumination (SSL) and highly regarded as potential candidates in visible light communication (VLC) systems, have garnered significant interest as a solution to alleviate the congested radio frequency spectrum in next-generation communications. Addressing the challenge of extremely limited bandwidth due to the low response of phosphor in conventional illumination, our research focuses on an AlGaInP-based amber LED. This LED represents a promising avenue for phosphor-free, high-speed VLC applications when used in conjunction with the prevalent blue LED technology based on nitride materials. The fabricated AlGaInP amber LED, with a mesa diameter of 100 µm2, has undergone comprehensive optoelectronic property and transmission performance characterization. We have successfully demonstrated a proof-of-concept for VLC using the amber LED, achieving a data transmission rate of 2.94 Gb/s that complies with the forward-error-correction (FEC) standard of 3.8 × 10-3, utilizing adaptive bit and power loading with discrete multitone (BPL-DMT) modulation.
ABSTRACT
Dual-functioning multiple quantum well (MQW) diodes can simultaneously transmit and receive information through visible light. Here, we report vertically stacked red, green, and blue (RGB) MQW diodes for light detection and display applications. Both blue and green MQW diodes are monolithically integrated with distributed Bragg reflector (DBR) filters to realize the separation of light. The versatile RGB MQW transmitter/receiver system not only creates full-color display but also effectively separates RGB light into various colors. These results open feasible routes to generate multifunctional device for the development of full-color display and light receiver.
ABSTRACT
Lightweight, low-cost, and simple systems for magnetic field sensing are in high demand. Here, we demonstrate such a magnetic field sensing system by integrating a light source, detector, magnetic fluid (MF), and plastic optical fiber (POF). Two bifunctional AlGaInP diodes with identical multiple-quantum well structures separately function as the light source and the detector of the sensing system due to the partial overlap between the electroluminescence and responsivity spectra. Magnetic field sensing is realized by changing the amount of reflected light due to the change in reflection coefficient of the POF/MF interface caused by the ambient magnetic field. The chip-integrated POF magnetic field sensor exhibits a reliable operation with a detection range from 10 Gs to 400 Gs. The results indicate that the chip-integrated POF sensor is promising for magnetic field sensing.
ABSTRACT
This study presents the development process of a multi-quantum well (MQW)-based optoelectronic integrated device designed for precise glucose concentration measurements. The proposed monolithic device consists of two identical diodes containing InGaN/GaN MQWs, serving as a light emitter (LED) and a photodetector (PD), respectively. The chip is meticulously packaged with polydimethylsiloxane (PDMS) to facilitate exposure to the glucose solution. By monitoring changes in the photocurrent of the PD that detects scattered light of the LED propagating through the sapphire substrate, the chip can accurately reflect alterations in the glucose solution's concentration. The device's uniqueness lies in its ability to achieve this precision without the need for external optical components. The device exhibits a fast response, operating at a sub-second level, and can gauge glucose solutions with concentrations ranging from 5% to 40%. The fabricated optical sensing device showcases appealing characteristics, including compactness, stability, repeatability, and rapid response, making it highly suitable for glucose concentration measurement applications.
ABSTRACT
In a III-nitride multiple quantum well (MQW) diode biased with a forward voltage, electrons recombine with holes inside the MQW region to emit light; meanwhile, the MQW diode utilizes the photoelectric effect to sense light when higher-energy photons hit the device to displace electrons in the diode. Both the injected electrons and the liberated electrons are gathered inside the diode, thereby giving rise to a simultaneous emission-detection phenomenon. The 4 × 4 MQW diodes could translate optical signals into electrical ones for image construction in the wavelength range from 320 to 440 nm. This technology will change the role of MQW diode-based displays since it can simultaneously transmit and receive optical signals, which is of crucial importance to the accelerating trend of multifunctional, intelligent displays using MQW diode technology.
ABSTRACT
When an AlGaInP quantum well (QW) diode is biased with a forward voltage and illuminated with an external shorter-wavelength light beam, the diode is in a superposition state of both light emission and detection. The two different states take place simultaneously, and both the injected current and the generated photocurrent begin to mix. Here, we make use of this intriguing effect and integrate an AlGaInP QW diode with a programmed circuit. The AlGaInP QW diode with the dominant emission peak wavelength centered around 629.5â nm is excited by a 620-nm red-light source. The photocurrent is then extracted as a feedback signal to regulate the light emission of the QW diode in real time without an external or monolithically integrated photodetector, paving a feasible way to autonomously adjust the brightness of the QW diode for intelligent illumination in response to changes in the environmental light condition.
ABSTRACT
Portable applications of fluorescence detection systems have gained much attention in various fields and require system components to be small and compact. In this work, we report on a compact fluorescence detection system and demonstrate its application for fluorescence sensing and imaging. The light source and filter are integrated on a single chip for the proposed system, which not only realizes the separation between excitation and fluorescent lights but also improves the light-emitting diode (LED) light extraction efficiency. Furthermore, the detection system allows for a removable sample unit. The results indicate that the performance of the distributed Bragg reflector (DBR) filter based on an amorphous dielectric film is excellent with selection ratios larger than 4600:1. The peak emission wavelength of the LED is 528 nm. The influence of green light leakage can be neglected, and the fluorescent red light is dominant when the fluorescence detection system is used for sensing and imaging. The low-cost and monolithic DBR-integrated III-nitride LED chip makes the proposed architecture a competitive candidate for portable fluorescence detection applications.
ABSTRACT
Multiple quantum well (MQW) III-nitride diodes can emit light and detect light at the same time. In particular, given the overlapping region between the emission spectrum and the detection spectrum, the III-nitride diode can absorb photons of shorter wavelengths generated from another III-nitride diode with the same MQW structure. In this study, a wireless visible light communication system was established using two pairs of identical III-nitride diodes with different wavelengths. In this system, two green light diode chips were used to transmit and receive green light signals on both sides. We have integrated two blue light chips with optical filtering in the middle of the optical link to carry out blue light communication, with one end transmitting and one end receiving. Simultaneously, green light was allowed to pass through two blue light chips for optical communication. Combined with a distributed Bragg reflection (DBR) coating, we proposed using four chips in one optical path to carry out optical communication between chips with the same wavelength and used the coating principle to gate the optical wavelength to filter the clutter of green light chips on both sides to make the channel purer and the symbols easier to demodulate. Based on this multifunctional equipment, advanced single-optical path, III-nitride, full-duplex optical communication links can be developed for the deployment of the Internet of Things.
ABSTRACT
The demand for on-chip multifunctional optoelectronic systems is increasing in today's Internet of Things era. III-nitride quantum well diodes (QWDs) can transmit and receive information through visible light and can be used as both light-emitting diodes (LEDs) and photodetectors (PDs). Spectral emission-detection overlap gives the III-nitride QWD an intriguing capability to detect and modulate light emitted by itself. In this paper, the coexistence of light emission and detection in a III-nitride QWD is experimentally demonstrated, and a wireless video communication system through light is established. When approximately biasing and illuminating at the same time, the III-nitride QWD can achieve light emission and detection simultaneously. This work provides a foundation for the development of multifunctional III-nitride QWDs and the realization of device-to-device data communication.
ABSTRACT
Due to the electro-optic property of InGaN multiple quantum wells, a III-nitride diode can provide light transmission, photo detection, and energy harvesting under different bias conditions. Made of III-nitride diodes arrayed in a single chip, the combination allows the diodes to transmit, detect, and harvest visible light at the same time. Here, we monolithically integrate a III-nitride transmitter, receiver, and energy harvester using a compatible foundry process. By adopting a bottom SiO2/TiO2 distributed Bragg reflector, we present a III-nitride diode with a peak external quantum efficiency of 50.65% at a forward voltage of 2.6 V for light emission, a power conversion efficiency of 6.68% for energy harvesting, and a peak external quantum efficiency of 50.9% at a wavelength of 388 nm for photon detection. The energy harvester generates electricity from ambient light to directly turn the transmitter on. By integrating a circuit, the electrical signals generated by the receiver pulse the emitted light to relay information. The multifunctioning system can continuously operate without an external power supply. Our work opens up a promising approach to develop multicomponent systems with new interactive functions and multitasking devices, due to III-nitride diode arrays that can simultaneously transmit, detect, and harvest light.
ABSTRACT
Multiple-quantum well (MQW) III-nitride diodes can both emit and detect light. In particular, a III-nitride diode can absorb shorter-wavelength photons generated from another III-nitride diode that shares an identical MQW structure because of the spectral overlap between the emission and detection spectra of the III-nitride diode, which establishes a wireless visible light communication system using two identical III-nitride diodes. Moreover, a wireless light communication system using a modulating retro-reflector (MRR) enables asymmetric optical links, which forms a two-way optical link using a single transmitter and receiver. Here, in association with an MRR, we propose, fabricate, and characterize asymmetric optical links using monolithic III-nitride diodes, where one III-nitride diode functions as a transmitter to emit light, an MRR reflects light with the encoded information, another monolithically integrated III-nitride diode serves as a receiver to absorb the reflected light to convert optical signals into electrical ones, and the encoded information is finally decoded. Advanced monolithic III-nitride asymmetric optical links can be developed toward Internet of Things (IoT) deployment based on such multifunction devices.
ABSTRACT
GaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) have been successfully fabricated through wafer bonding and Si substrate removal. By combining the chemical mechanical polishing technique, we obtained a roughness of about 0.24 nm for a scan area of 5 µm × 5 µm. The double-sided dielectric distributed Bragg reflectors could form a high-quality optical resonant cavity, and the cavity modes exhibited a linewidth of 1 nm at the peak wavelength of around 405 nm, corresponding to a quality factor of 405. High data transmission in free space with an opening in the eye diagram was exhibited at 150 Mbps, which is limited by the detection system. These results showed that GaN-based RCLEDs grown on Si are promising as a low-cost emitter for visible light communications in future.
ABSTRACT
The electrical and optical properties of micro-light emitting diodes (µ-LEDs), including current-voltage (I-V), capacitance-voltage (C-V) curves, photoluminescence (PL) as well as electroluminescence (EL) spectra have been measured and analyzed. It is found that the unit area emitting intensity of small size µ-LED is stronger that of big size µ-LED at the same conditions, due to the enhancement of both the internal quantum efficiency ηint and extraction efficiency Cex. The present method of utilizing the µ-LED for improving the unit area brightness of LEDs is applicable to high efficiency surface emitting device on GaN-on-silicon platform.
ABSTRACT
A monolithic multicomponent system is proposed and implemented on a III-nitride-on-silicon platform, whereby two multiple-quantum-well diodes (MQW-diodes) are interconnected by a suspended waveguide. Both MQW-diodes have an identical low-In-content InGaN/Al0.10Ga0.90N MQW structure and are produced by the same fabrication process flow. When appropriately biased, both MQW-diodes operate under a simultaneous emission-detection mode and function as a transmitter and a receiver at the same time, forming an in-plane full-duplex light communication system. Real-time full-duplex audio communication is experimentally demonstrated using the monolithic multicomponent system in combination with an external circuit.
ABSTRACT
Nitride-based semiconductor materials inherently have the intriguing functionalities of emission and photodetection. In particular, InGaN/GaN multiple-quantum-well (MQW) diodes exhibit dual light-harvesting and light-emitting modes of operation. Here a multifunctional system is proposed to integrate MQW diodes within a single chip with enhanced functionalities toward diverse applications of the Internet of Things (IoT). When we shine light on the MQW diodes, the absorbed photons can produce electron-hole pairs to charge an external capacitor. The energy of the ambient light is converted into electrical energy, which in turn powers the same MQW diode for lighting. The electrical energy within the capacitor is finally converted into the energy of the emitted light. Therefore, InGaN/GaN MQW diodes can be made to harvest energy from ambient light sources for IoT applications from a self-powered light source to intelligent terminal charging system.
ABSTRACT
An on-chip multicomponent system is implemented on a III-nitride-on-silicon platform by integrating a transmitter, InGaN waveguide, InGaN directional coupler, and receivers onto a single chip. The transmitter and the receiver share an identical InGaN/GaN multiple-quantum-well (MQW) diode structure and are produced by using the same wafer-level process flow. The receiver sensitively responds to the short-wavelength half of the emission spectrum of the transmitter, thus realizing the multicomponent system with the capability for inplane light communication. A SiO2 isolation layer is employed to decrease the p-n junction capacitance, thus improving the modulation rate without modifying the MQW structure. The wire-bonded monolithic multicomponent system experimentally demonstrates inplane data transmission at 80 Mbps and spatial light communication at 100 Mbps, paving the way for diverse applications from on-chip power monitoring to inplane light communication in the visible light spectrum.
ABSTRACT
To completely clarify the spectral responses of linear grating filters (LGFs) under full-conical incidence (where the incident plane is parallel to the linear grating bars), a bandstop LGF is implemented on an HfO2-on-silicon platform, and its spectral responses are comprehensively investigated. The measured spectra agree well with the simulated outcomes. For the TM- (or TE-) polarized wave under full-conical incidence, there exists a pair of resonance bands, whose spectral features differ significantly from each other. One resonance band has a high angular tolerance and is capable of accommodating divergent waves, whereas the other band presents a tunable spectral linewidth and can be used to achieve an ultra-high Q-factor. In particular, it is demonstrated that all of the resonance bands under full-conical incidence are degenerate regardless of what the value of the incident angle is. Our investigations reveal interesting spectral attributes of LGFs under full-conical incidence, which are highly beneficial for developing new filtering devices.
ABSTRACT
The multiple functionalities of III-nitride semiconductors enable the integration with different components into a multicomponent system with enhanced functions. Here, we propose to fabricate and characterize a monolithic InGaN photonic circuit of a transmitter, waveguide, and receiver on an III-nitride-on-silicon platform. Both the transmitter and the receiver, sharing identical InGaN/GaN multiple-quantum-well structures and fabrication procedures, work to emit light and detect light independently. The 8 µm wide and 200 µm long InGaN waveguide couples the modulated light from the transmitter and sends the guided light to the receiver, leading to the formation of an in-plane light transmission system. The induced photocurrent at the receiver is highly sensitive to the light output of the transmitter. Multi-dimensional light transmissions are experimentally demonstrated at 200 Mb/s. These multifunctional photonic circuits open feasible approaches to the development of III-nitride multicomponent systems with integrated functions for comprehensive applications in the visible region.
ABSTRACT
We propose, fabricate and demonstrate on-chip photonic integration of suspended InGaN/GaN multiple quantum wells (MQWs) devices on the GaN-on-silicon platform. Both silicon removal and back wafer etching are conducted to obtain membrane-type devices, and suspended waveguides are used for the connection between p-n junction InGaN/GaN MQWs devices. As an in-plane data transmission system, the middle p-n junction InGaN/GaN MQWs device is used as a light emitting diode (LED) to deliver signals by modulating the intensity of the emitted light, and the other two devices act as photodetectors (PDs) to sense the light guided by the suspended waveguide and convert the photons into electrons, achieving 1 × 2 in-plane information transmission via visible light. Correspondingly, the three devices can function as independent PDs to realize multiple receivers for free space visible light communication. Further, the on-chip photonic platform can be used as an active electro-optical sensing system when the middle device acts as a PD and the other two devices serve as LEDs. The experimental results show that the auxiliary LED sources can enhance the amplitude of the induced photocurrent.
