1.
Phys Rev Lett
; 85(20): 4365-8, 2000 Nov 13.
Article
in English
| MEDLINE
| ID: mdl-11060639
ABSTRACT
Co islands grown on Cu(111) with a stacking fault at the interface present a conductance in the empty electronic states larger than the Co islands that follow the stacking sequence of the Cu substrate. Electrons can be more easily injected into these faulted interfaces, providing a way to enhance transmission in future spintronic devices. The electronic states associated with the stacking fault are visualized by tunneling spectroscopy, and its origin is identified by band structure calculations.
2.
3.
Phys Rev B Condens Matter
; 54(3): 2225-2235, 1996 Jul 15.
Article
in English
| MEDLINE
| ID: mdl-9986075
4.
Phys Rev B Condens Matter
; 53(14): R8891-R8894, 1996 Apr 01.
Article
in English
| MEDLINE
| ID: mdl-9982478
5.
6.
Phys Rev B Condens Matter
; 51(6): 3743-3753, 1995 Feb 01.
Article
in English
| MEDLINE
| ID: mdl-9979191
7.
Phys Rev B Condens Matter
; 50(15): 10537-10547, 1994 Oct 15.
Article
in English
| MEDLINE
| ID: mdl-9975151
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9.
Phys Rev B Condens Matter
; 46(16): 10277-10283, 1992 Oct 15.
Article
in English
| MEDLINE
| ID: mdl-10002872