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1.
Phys Rev Lett ; 112(16): 167001, 2014 Apr 25.
Article in English | MEDLINE | ID: mdl-24815663

ABSTRACT

We have studied the low-energy excitations in a minimalistic protected Josephson circuit which contains two basic elements (rhombi) characterized by the π periodicity of the Josephson energy. Novel design of these elements, which reduces their sensitivity to the offset charge fluctuations, has been employed. We have observed that the lifetime T1 of the first excited state of this quantum circuit in the protected regime is increased up to 70 µs, a factor of ∼100 longer than that in the unprotected state. The quality factor ω01T1 of this qubit exceeds 106. Our results are in agreement with theoretical expectations; they demonstrate the feasibility of symmetry protection in the rhombus-based qubits fabricated with existing technology.

2.
Nat Mater ; 11(7): 567-8, 2012 May 20.
Article in English | MEDLINE | ID: mdl-22609558
3.
Nat Nanotechnol ; 3(8): 496-500, 2008 Aug.
Article in English | MEDLINE | ID: mdl-18685638

ABSTRACT

The submillimetre or terahertz region of the electromagnetic spectrum contains approximately half of the total luminosity of the Universe and 98% of all the photons emitted since the Big Bang. This radiation is strongly absorbed in the Earth's atmosphere, so space-based terahertz telescopes are crucial for exploring the evolution of the Universe. Thermal emission from the primary mirrors in these telescopes can be reduced below the level of the cosmic background by active cooling, which expands the range of faint objects that can be observed. However, it will also be necessary to develop bolometers-devices for measuring the energy of electromagnetic radiation-with sensitivities that are at least two orders of magnitude better than the present state of the art. To achieve this sensitivity without sacrificing operating speed, two conditions are required. First, the bolometer should be exceptionally well thermally isolated from the environment; second, its heat capacity should be sufficiently small. Here we demonstrate that these goals can be achieved by building a superconducting hot-electron nanobolometer. Its design eliminates the energy exchange between hot electrons and the leads by blocking electron outdiffusion and photon emission. The thermal conductance between hot electrons and the thermal bath, controlled by electron-phonon interactions, becomes very small at low temperatures ( approximately 1 x 10-16 W K-1 at 40 mK). These devices, with a heat capacity of approximately 1 x 10-19 J K-1, are sufficiently sensitive to detect single terahertz photons in submillimetre astronomy and other applications based on quantum calorimetry and photon counting.


Subject(s)
Astronomy/instrumentation , Hot Temperature , Nanotechnology/instrumentation , Physics , Electromagnetic Fields , Electrons , Energy Transfer , Equipment Design , Niobium/chemistry , Photons , Piperidones/chemistry , Polymethyl Methacrylate/chemistry , Sensitivity and Specificity , Silicon/chemistry , Silicon Compounds/chemistry , Silicon Dioxide/chemistry , Surface Properties , Thermal Conductivity , Titanium/chemistry
4.
Phys Rev Lett ; 96(5): 056604, 2006 Feb 10.
Article in English | MEDLINE | ID: mdl-16486967

ABSTRACT

By simultaneously measuring the excitation spectra of transient luminescence and transient photoconductivity after picosecond pulsed excitation in rubrene single crystals, we show that free excitons are photoexcited starting at photon energies above 2.0 eV. We observe a competition between photoexcitation of free excitons and photoexcitation into vibronic states that subsequently decays into free carriers, while molecular excitons are instead formed predominantly through the free exciton. At photon energies below 2.25 eV, free charge carriers are created only through a long-lived intermediate state with a lifetime of up to 0.1 ms and no free carriers appear during the exciton lifetime.

5.
Science ; 303(5664): 1644-6, 2004 Mar 12.
Article in English | MEDLINE | ID: mdl-15016993

ABSTRACT

We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as approximately 15 cm2/V.s and subthreshold slopes as low as 2nF.V/decade.cm2. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.

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