In Situ Thermal Atomic Layer Etching for Sub-5 nm InGaAs Multigate MOSFETs.

Thermal atomic layer etching (ALE) was demonstrated on ternary III-V compound semiconductors. In particular, thermal ALE on InGaAs and InAlAs was achieved with sequential, self-limiting fluorination and ligand-exchange reactions using hydrogen fluoride (HF) as the fluorination reactant and dimethylaluminum chloride (DMAC) as the ligand-exchange reactant. Thermal ALE was investigated on planar surfaces and three-dimensional nanostructures. The measured radial etch rates on In0.53Ga0.47As and In0.52Al0.48As vertical nanowires (VNWs) at 300 °C were 0.24 and 0.62 Å/cycle, respectively. An optimized thermal ALE process did not increase the surface roughness after 200 cycles. The etching process also displayed selectivity and orientation dependence. This new thermal ALE process in combination with in situ atomic layer deposition (ALD) was used to fabricate InGaAs gate-all-around structures with minimum width down to 3 nm. The in situ ALE-ALD process produced a sharp vertical MOS interface. Finally, the merits of thermal ALE were demonstrated in the fabrication of n-channel InGaAs FinFETs with record ON-state and OFF-state transistor performance. On the basis of this transistor demonstration, thermal ALE shows great promise for high-volume device manufacturing.

Electrical and thermal conduction in ultra-thin freestanding atomic layer deposited W nanobridges.

Work presented here measures and interprets the electrical and thermal conductivities of atomic layer deposited (ALD) free-standing single film and periodic tungsten and aluminum oxide nanobridges with thicknesses from ∼5-20 nm and ∼3-13 nm, respectively. Electrical conductivity of the W films is reduced by up to 99% from bulk, while thermal conductivity is reduced by up to 91%. Results indicate phonon contribution to thermal conductivity is dominant in these ALD films and may be substantially reduced by the incorporation of periodicity in the ALD W/Al2O3 nanolaminates. Additionally, thin film conduction modeling demonstrates nano-structured grain features largely dictate electron and phonon conduction in ALD W. New fabrication methods have allowed for the development of free-standing ultra-thin structures with layers on the order of several nanometers utilizing ALD. While the literature contains diverse studies of the physical properties of thin films prepared by traditional micro-fabrication sputtering or chemical vapor deposition techniques, there remains little data on freestanding structures containing ALD generated materials. Specifically, knowledge of the electrical and thermal conductivity of ALD generated materials will aid in the future development of ultra-thin nano-devices.

GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy.

GaN nanowires were coated with tungsten by means of atomic layer deposition. These structures were then adapted as probe tips for near-field scanning microwave microscopy. These probes displayed a capacitive resolution of ~0.03 fF, which surpasses that of a commercial Pt tip. Upon imaging of MoS2 sheets with both the Pt and GaN nanowire tips, we found that the nanowire tips were comparatively immune to surface contamination and far more durable than their Pt counterparts.