ABSTRACT
We investigate the influence of the average molar mass (Mw) of the capping agent poly(N-vinylpyrrolidone) (PVP) on the conductivity of a silver nanowire (AgNW) network. During the polyol process, the chain length of PVP is known to influence the AgNW diameters and lengths. By altering the reaction temperature and time and using PVP of different chain lengths, we synthesized AgNWs with varying diameters, lengths and PVP coverage. The obtained plethora of AgNWs is the basis for conductivity investigations of networks made of AgNWs with a diameter of either 60 nm or 80 nm. The results show a negative influence of long-chain PVP on the conductivity of the subsequent network if 60 nm thick AgNWs are employed. Overall, we obtain well performing AgNW transparent electrodes on glass with RS = 24.4 Ω sq-1 at 85.5%T550nm.
ABSTRACT
Future optoelectronic devices and their low-cost roll-to-roll production require mechanically flexible transparent electrodes (TEs) and substrate materials. Indium tin oxide (ITO) is the most widely used TE because of its high optical transmission and low electrical sheet resistance. However, ITO, besides being expensive, has very poor performance under mechanical stress because of its fragile oxide nature. Alternative TE materials have thus been sought. Here we report the development of a multilayer TiO2/Ag/Al-doped ZnO TE structure and an ITO-free polymer solar cell (PSC) incorporating it. Electro-optical performances close to those of ITO can be achieved for the proposed TE and corresponding PSC with an additional advantage in their mechanical flexibility, as demonstrated by the fact that the cell efficiency maintains 94% of its initial value (6.6%) after 400 cycles of bending, with 6 and 3 cm maximum and minimum radii, respectively. Instead of common plastic materials, our work uses a very thin (0.14 mm) flexible glass substrate with several benefits, such as the possibility of high-temperature processes, superior antipermeation properties against oxygen and moisture, and improved film adhesion.
ABSTRACT
An effective method to deposit atomically smooth ultrathin silver (Ag) films by employing a 1 nm copper (Cu) seed layer is reported. The inclusion of the Cu seed layer leads to the deposition of films with extremely low surface roughness (<0.5 nm), while it also reduces the minimum thickness required to obtain a continuous Ag film (percolation thickness) to 3 nm compared to 6 nm without the seed layer. Moreover, the Cu seed layer alters the growth mechanism of the Ag film by providing energetically favorable nucleation sites for the incoming Ag atoms leading to an improved surface morphology and concomitant lower electrical sheet resistance. Optical measurements together with X-ray diffraction and electrical resistivity measurements confirmed that the Ag film undergoes a layer-by-layer growth mode resulting in a smaller grain size. The Cu seeded Ag growth method provides a feasible way to deposit ultrathin Ag films for nanoscale electronic, plasmonic and photonic applications. In addition, as a result of the improved uniformity, the oxidation of the Ag layer is strongly reduced to negligible values.
