ABSTRACT
Mirrors are used in optical sensors and measurement setups. This creates a demand for mirrors made of new materials and having various properties tailored to specific applications. In this work, we propose silicon covered with a thin silicon nitride layer as a mirror for near-infrared measurements. SiN layer was deposited on a standard silicon wafer with a Low-Pressure Chemical Vapor Deposition furnace. Then, the created layer was investigated using ellipsometry and scanning electron microscope. Subsequently, the mirror was used as a reflecting surface in a Fabry-Perot fiber-optic interferometer. The mirror performance was investigated for wavelengths used in telecomunication (1310 nm and 1550 nm) and then compared with results obtained with the same measurement setup, with a silver mirror instead of silicon covered with SiN, as reference. Results showed that the proposed mirror can replace the silver one with satisfying results for investigated wavelengths.
