Large area photonic crystal quantum cascade laser with 5 W surface-emitting power.

Room temperature surface emission is realized on a large area (1.5 mm × 1.5 mm) photonic crystal quantum cascade laser (PhC-QCL) driven under pulsed mode, at the wavelength around 8.75 µm. By introducing in-plane asymmetry to the pillar shape and optimizing the current injection with a grid-like window contact, the maximum peak power of the PhC-QCL is up to 5 W. The surface emitting beam has a crossing shape with 10° divergence.

Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy.

Nano-heteroepitaxial growth of GaAs on Si(001) by metal organic vapor phase epitaxy was investigated to study emerging materials phenomena on the nano-scale of III-V/Si interaction. Arrays of Si nano-tips (NTs) embedded in a SiO2 matrix were used as substrates. The NTs had top Si openings of 50-90 nm serving as seeds for the selective growth of GaAs nano-crystals (NCs). The structural and morphological properties were investigated by high resolution scanning electron microscopy, atomic force microscopy, electron backscatter diffraction, x-ray diffraction, and high resolution scanning transmission electron microscopy. The GaAs growth led to epitaxial NCs featuring a bi-modal distribution of size and morphology. NCs of small size exhibited high structural quality and well-defined {111}-{100} faceting. Larger clusters had less regular shapes and contained twins. The present work shows that the growth of high quality GaAs NCs on Si NTs is feasible and can provide an alternate way to the integration of compound semiconductors with Si micro- and opto-electronics technology.

Sub-300-femtosecond operation from a MIXSEL.

Peak power scaling of semiconductor disk lasers is important for many applications, but their complex pulse formation mechanism requires a rigorous pulse characterization to confirm stable fundamental modelocking. Here we fully confirm sub-300-fs operation of Modelocked Integrated eXternal-cavity Surface Emitting Lasers (MIXSELs) with record high peak power at gigahertz pulse repetition rates. A strain-compensated InGaAs quantum well gain section enables an emission wavelength in the range of Yb-doped amplifiers at ≈1030 nm. We demonstrate the shortest pulses from a MIXSEL with a duration of 253 fs with 240 W of peak power, the highest peak power generated from any MIXSEL to date. This peak power performance is comparable to conventional SESAM-modelocked VECSELs for the first time. At a 10-GHz pulse repetition rate we still obtained 279-fs pulses with 310 mW of average output power, which is currently the highest output power of any femtosecond MIXSEL. Continuous tuning of the pulse repetition rate has been demonstrated with sub-400-fs pulse durations and >225 mW of average output power between 2.9 and 3.4 GHz. The strain-compensated MIXSEL chip allowed for more detailed parameter studies with regards to different heat sink temperatures, pump power, and epitaxial homogeneity of the MIXSEL chip for the first time. We discuss in detail, how the critical temperature balance between quantum well gain and quantum well absorber, the partially saturated absorber and a limited epitaxial growth quality influence the overall device efficiency.

Gigahertz self-referenceable frequency comb from a semiconductor disk laser.

We present a 1.75-GHz self-referenceable frequency comb from a vertical external-cavity surface-emitting laser (VECSEL) passively modelocked with a semiconductor saturable absorber mirror (SESAM). The VECSEL delivers 231-fs pulses with an average power of 100 mW and is optimized for stable and reliable operation. The optical spectrum was centered around 1038 nm and nearly transform-limited with a full width half maximum (FWHM) bandwidth of 5.5 nm. The pulses were first amplified to an average power of 5.5 W using a backward-pumped Yb-doped double-clad large mode area (LMA) fiber and then compressed to 85 fs with 2.2 W of average power with a passive LMA fiber and transmission gratings. Subsequently, we launched the pulses into a highly nonlinear photonic crystal fiber (PCF) and generated a coherent octave-spanning supercontinuum (SC). We then detected the carrier-envelope offset (CEO) frequency (f(CEO)) beat note using a standard f-to-2f-interferometer. The f(CEO) exhibits a signal-to-noise ratio of 17 dB in a 100-kHz resolution bandwidth and a FWHM of ≈10 MHz. To our knowledge, this is the first report on the detection of the f(CEO) from a semiconductor laser, opening the door to fully stabilized compact frequency combs based on modelocked semiconductor disk lasers.

Quantum cascade laser in a master oscillator power amplifier configuration with Watt-level optical output power.

We present the design and realization of short-wavelength (λ = 4.53 µm) and buried-heterostructure quantum cascade lasers in a master oscillator power amplifier configuration. Watt-level, singlemode peak optical output power is demonstrated for typical non-tapered 4 µm wide and 5.25 mm long devices. Farfield measurements prove a symmetric, single transverse-mode emission in TM(00)-mode with typical divergences of 25° and 27° in and perpendicular to growth direction, respectively. We demonstrate singlemode tuning over a range of 7.9 cm(-1) for temperatures between 263K and 313K and also singlemode emission for different driving currents. The side mode suppression ratio is measured to be higher than 20 dB.

Design and fabrication of photonic crystal quantum cascade lasers for optofluidics.

We present novel designs and demonstrate a fabrication platform for electrically driven lasers based on high quality-factor photonic crystal cavities realized in mid-infrared quantum cascade laser material. The structures are based on deep-etched ridges with their sides perforated with photonic crystal lattice, using focused ion beam milling. In this way, a photonic gap is opened for the emitted TM polarized light. Detailed modeling and optimization of the optical properties of the lasers are presented, and their application in optofluidics is investigated. Porous photonic crystal quantum cascade lasers have potential for on-chip, intracavity chemical and biological sensing in fluids using mid infrared spectroscopy. These lasers can also be frequency tuned over a large spectral range by introducing transparent liquid in the photonic crystal holes.

Continuous-wave operation of a broadly tunable thermoelectrically cooled external cavity quantum-cascade laser.

Continuous-wave operation of an external cavity quantum-cascade laser on a thermoelectric cooler is reported. The active region of the gain element was based on a bound-to-continuum design emitting near 5.15 microm. The external cavity setup was arranged in a Littrow configuration. The front facet of the gain chip was antireflection coated. The laser could be tuned over more than 170 cm(-1) from 4.94 to 5.4 microm and was single mode over more than 140 cm(-1). The output power was in excess of 10 mW over approximately 100 cm(-1) and in excess of 5 mW over approximately 130 cm(-1) at -30 degrees C.

Continuous wave operation of a mid-infrared semiconductor laser at room temperature.

Continuous wave operation of quantum cascade lasers is reported up to a temperature of 312 kelvin. The devices were fabricated as buried heterostructure lasers with high-reflection coatings on both laser facets, resulting in continuous wave operation with optical output power ranging from 17 milliwatts at 292 kelvin to 3 milliwatts at 312 kelvin, at an emission wavelength of 9.1 micrometers. The results demonstrate the potential of quantum cascade lasers as continuous wave mid-infrared light sources for high-resolution spectroscopy, chemical sensing applications, and free-space optical communication systems.