ABSTRACT
The optimization of multicomponent emissive layer (EML) deposition by slot-die coating for organic light-emitting diodes (OLEDs) is presented. In the investigated EMLs, the yellow-green iridium complex (Ir) was doped in two types of host: a commonly used mixture of poly(N-vinylcarbazole) (PVK) with oxadiazole derivative (PBD) or PVK with thermally activated delayed fluorescence-assisted dopant (10-(4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-10H-spiro[acridine-9,9'-fluorene], SpiroAC-TRZ). In this article, OLEDs with EML prepared in air by slot-die coating, facilitating industrial manufacturing, are confronted with those with spin-coated EML in nitrogen. OLEDs based on PVK:PBD + 2 wt.% Ir-dopant exhibit comparable performance: ~13 cd A-1, regardless of the used method. The highest current efficiency (21 cd A-1) is shown by OLEDs based on spin-coated PVK with 25 wt.% SpiroAC-TRZ and 2 wt.% Ir-dopant. It is three times higher than the efficiency of OLEDs with slot-die-coated EML in air. The performance reduction, connected with the adverse oxygen effect on the energy transfer from TADF to emitter molecules, is minimized by the rapid EML annealing in a nitrogen atmosphere. This post-treatment causes more than a doubling of the OLED efficiency, from 7 cd A-1 to over 15 cd A-1. Such an approach may be easily implemented in other printing techniques and result in a yield enhancement.
ABSTRACT
Many methods have been proposed to increase the efficiency of organic electroluminescent materials applied as an emissive layer in organic light emitting diodes (OLEDs). Herein, we demonstrate enhancement of electroluminescence efficiency and operational stability solution processed OLEDs by employing thermally activated delayed fluorescence (TADF) molecules as assistant dopants in host-guest systems. The TADF assistant dopant (SpiroAC-TRZ) is used to facilitate efficient energy transfer from host material poly(N-vinylcarbazole) (PVK) to a phosphorescent Ir(III) emitter. We present the analysis of energy transfer and charge trapping-two main processes playing a crucial role in light generation in host-guest structure OLEDs. The investigation of photo-, electro- and thermoluminescence for the double-dopant layer revealed that assistant dopant does not only harvest and transfer the electrically generated excitons to phosphorescent emitter molecules but also creates exciplexes. The triplet states of formed PVK:SpiroAC-TRZ exciplexes are involved in the transport process of charge carriers and promote long-range exciton energy transfer to the emitter, improving the efficiency of electroluminescence in a single emissive layer OLED, resulting in devices with luminance exceeding 18 000 cd/m2 with a luminous efficiency of 23 cd/A and external quantum efficiency (EQE) of 7.4%.
ABSTRACT
A series of new bis(benzo[h]quinolinato) Ir(III) complexes with modified ß-ketoiminato ancillary ligands were synthesized, and their electrochemical, photophysical properties were determined with the support of theoretical calculations. Moreover, all the synthesized heteroleptic Ir(III) complexes were examined as dopants of the host-guest type emissive layers in solution-processed phosphorescent organic light emitting diodes (PhOLEDs) of a simple structure. As expected on the basis of voltammetry measurements as well as DFT calculations, all the compounds appeared to be green emitters. Their examination showed that alteration of ß-ketoiminato ligand structure causes frontier orbitals' energy levels to be slightly changed, while significantly affecting photoluminescence and electroluminescence efficiencies of iridium phosphors containing these ligands. It was also found that modification of ancillary ligands might enhance charge trapping on the dopant, thus increasing its efficiency, especially in electroluminescence. From among the iridium complexes studied, the compound bearing 1-naphthyl group bonded to the nitrogen atom of the ancillary ligand proved to be the most efficient emitter. The PhOLED fabricated on the basis of this dopant has reached a luminance level of 16000 cd/m2, current efficiency close to 12 cd/A, and an external quantum efficiency around 3.2%.
