ABSTRACT
High-porosity nanostructured amorphous tungsten OXIDE (a-WO3) films were synthesized by a Hot Filament Chemical Vapor Deposition technique (HFCVD) and then transformed into a crystalline WO3 by simple thermal annealing. The a-WO3 films were annealed at 100, 300, and 500 °C for 10 min in an air environment. The films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), micro-Raman spectroscopy, high-resolution transmission electron microscopy (HR-TEM), and UV-vis spectroscopy. Results revealed that the a-WO3 films were highly porous, composed of cauliflower-like structures made of nanoparticles with average sizes of 12 nm. It was shown that the effect of annealing on the morphology of the a-WO3 films leads to a sintering process. However, the morphology is conserved. It was found that at annealing temperatures of 100 °C, the a-WO3 films are of an amorphous nature, while at 300 °C, the films crystallize in the monoclinic phase of WO3. The calculated bandgap for the a-WO3 was 3.09 eV, and 2.53 eV for the film annealed at 500 °C. Finally, the results show that porous WO3 films preserve the morphology and maintain the porosity, even after the annealing at 500 °C.
ABSTRACT
An experimental and theoretical study about selective photodeposition of metallic zinc nanoparticles onto an optical fiber end is presented. It is well known that metallic nanoparticles possess a high absorption coefficient and therefore trapping and manipulation is more challenging than dielectric particles. Here, we demonstrate a novel trapping mechanism that involves laser-induced convection flow (due to heat transfer from the zinc particles) that partially compensates both absorption and scattering forces in the vicinity of the fiber end. The gradient force is too small and plays no role on the deposition process. The interplay of these forces produces selective deposition of particles whose size is directly controlled by the laser power. In addition, a novel trapping mechanism termed convective-optical trapping is demonstrated.
ABSTRACT
A method to manage the resistivity of n-type ZnO films is presented. It involves the controlled diffusion of Zn at low temperature in N2 atmosphere into the ZnO/Zn/ZnO structure. The structures were made by DC sputtering technique. The diffusion periods were varied from 5 to 30 min. This process allow us to obtain ZnO films with excess of Zn (ZnO:Zn). The electrical characterization showed that the resistivity of the films can be varied from 0.01 to 100 omega-cm, the electron concentration from 10(19) to 10(17) cm(-3) and the carrier mobility from 10 to 40 cm2N-s. The films are nanocrystalline with preferred (002) orientation and crystal size that varies from 13 to 20 nm depending on the diffusion period. The films have a band gap of 3.18 eV and 70% of transmittance in the visible region, these properties were obtained from the transmittance measurements of low-resistivity films. Films have good structural, optical and electrical properties, and could be used in the manufacture of light emitting diodes.
