Weibull function to describe the cumulative size distribution of clumps formed by two-dimensional grains randomly arranged on a plane.

Many manifestations of natural processes give rise to interesting morphologies; it is all too easy to cite the corrugation of the Earth's surface or of planets in general. However, limiting ourselves to 2D cases, the morphology to which crystal growth gives rise is also intriguing. In particular, it is interesting to study some characteristics of the cluster projection in 2D, namely the study of the shapes of the speckles (fractal dimension of their rims) or the distribution of their areas. Recently, for instance, it has been shown that the size cumulative distribution function (cdf) of "voids" in a corrole film on Au(111) is well described by the well known Weibull distribution. The present article focuses on the cdf of cluster areas generated by numerical simulations: the clumps (clusters) are generated by overlapping grains (disks) whose germs (disk centers) are chosen randomly in a 2000×2000 square lattice. The obtained cdf of their areas is excellently fitted to the Weibull function in a given range of surface coverage. The same type of analysis is also performed for a fixed-time clump distribution in the case of Kolmogorov-Johnson-Mehl-Avrami (KJMA) kinetics. Again, a very good agreement with the Weibull function is obtained.

Confinement effects in π-bonded chains at group IV semiconductor (111) surfaces.

The degree of 1D character of surface chains at group IV (111)-2 × 1 reconstructed surfaces is established by surface sensitive optical spectroscopy. Optical experiments on a diamond C(111)-2 × 1 surface show that the absorption peak related to dangling-bond transitions exhibits a marked blueshift upon oxygen exposure of the clean surface. Such behaviour is analogous to that observed on a clean Si(111)-2 × 1 surface. For both surfaces the experimental finding is interpreted in terms of quantum confinement of surface electrons in quasi-one-dimensional π-bonded chains, whose length decreases with oxygen uptake. A different behaviour is observed in Ge(111)-2 × 1, where only a very slight blueshift of the surface-state optical transition is detected upon oxidation. The almost negligible blueshift in Ge(111)-2 × 1 is consistent with a significant coupling between the π-bonded chains resulting in a much less pronounced one-dimensional character of Ge(111)-2 × 1 surface electrons compared to diamond and silicon reconstructed surfaces.

Charge transfer between isomer domains on n+-doped Si(111)-2 × 1: energetic stabilization.

Domains of different surface reconstruction-negatively or positively buckled isomers-have been previously observed on highly n-doped Si(111)-2 × 1 surfaces by angle-resolved ultraviolet photoemission spectroscopy and scanning tunneling microscopy/spectroscopy. At low temperature, separate domains of the two isomer types are apparent in the data. It was argued in the previous work that the negative isomers have a lower energy of their empty surface states than the positive isomers, providing a driving force for the formation of the negative isomers. In this work we show that the relative abundance of these two isomers shows considerable variation from sample to sample, and it is argued that the size of the isomer domains is likely to be related to this variation. A model is introduced in which the electrostatic effect of charge transfer between the domains is computed, yielding total energy differences between the two types of isomer. It is found that the transfer of electrons from domains of positive isomers to negative ones leads to an energetic stabilization of the negative isomers. The model predicts a dependence of the isomer populations on doping that is in agreement with most experimental results. Furthermore, it accounts, at least qualitatively, for the marked lineshape variation from sample to sample observed in photoemission spectra.

Coexistence of negatively and positively buckled isomers on n+-doped Si(111) − 2 × 1.

A long-standing puzzle regarding the Si(111) − 2 × 1 surface has been solved. The surface energy gap previously determined by photoemission on heavily n-doped crystals was not compatible with a strongly bound exciton known from other considerations to exist. New low-temperature angle-resolved photoemission and scanning tunneling microscopy data, together with theory, unambiguously reveal that isomers with opposite bucklings and different energy gaps coexist on such surfaces. The subtle energetics between the isomers, dependent on doping, leads to a reconciliation of all previous results.

Growth-related properties and postgrowth phenomena in organic molecular thin films.

The problem of monitoring the structural and morphological evolutions of thin films of organic molecular materials during their growth by organic molecular beam epitaxy and in the postgrowth stage is addressed here by a combination of in situ optical reflectance anisotropy measurements, ex situ optical and morphological investigations, and theoretical simulation of the material optical response. For alpha-quaterthiophene, a representative material in the class of organic molecular semiconductors, the results show that molecules crystallize in the first stage of growth in metastable structures, even when deposition is carried out at room temperature. In the postdeposition stage, the film structure evolves within a few days to the known equilibrium structure of the low temperature polymorph. When deposition is carried out at low substrate temperatures, an evolution of the film morphology is also demonstrated.