Interlayer Quasi-Bonding Interactions in 2D Layered Materials: A Classification According to the Occupancy of Involved Energy Bands.

Recent studies have revealed that the interlayer interaction in two-dimensional (2D) layered materials is not simply of van der Waals character but could coexist with quasi-bonding character. Herein, we classify the interlayer quasi-bonding interactions into two main categories (I: homo-occupancy interaction; II: hetero-occupancy interaction) according to the occupancy of the involved energy bands near the Fermi level. We then investigate the quasi-bonding-interaction-induced band structure evolution of several representative 2D materials based on density functional theory calculations. Further calculations confirm that this classification is applicable to generic 2D layered materials and provide a unified understanding of the total strength of interlayer interaction, which is a synergetic effect of the van der Waals attraction and the quasi-bonding interaction. The latter is stabilizing in main category II and destabilizing in main category I. Thus, the total interlayer interaction strength is relatively stronger in category II and weaker in category I.

Contrasting Oxygen Reduction Reactions on Zero- and One-Dimensional Defects of MoS2 for Versatile Applications.

Oxygen reduction reaction (ORR) is a key microscopic process in many electrochemical applications of materials, where the requirements of their ORR performances may vary strikingly, for example, during the uses of MoS2 as an electrocatalyst and anticorrosion/lubricating coating in aqueous/humid environments, ORR should be activated and inhibited, respectively. To reveal a complete ORR profile of MoS2, using first-principles calculations, we examine the stabilities of various possible zero-dimensional point defects on the surface and one-dimensional edge defects and comprehensively explore the ORR activities on pristine MoS2 surface and those defects in acid/alkaline solutions. It is found that the ORRs on the pristine surface and surfaces with point defects always require large overpotentials (>1.0 V), indicating a defect-immune resistance of the planar MoS2 surface against the ORR. However, the ORR overpotentials on edge defects can reach as low as 0.66 V, corresponding to a relatively high activity close to that of the prototypical catalyst Pt (overpotential ∼0.45 V). Such contrasting ORR behaviors of point and edge defects are also understood in depth by analyzing the underlying thermodynamic and electronic-structure mechanisms. This work not only quantitatively explains the performances of MoS2 in both galvanic corrosion and electrochemical catalysis but also provides a useful structure-ORR map that can facilitate adapting the realistic MoS2 to versatile electrochemical applications.

Highly in-plane anisotropic 2D semiconductors ß-AuSe with multiple superior properties: a first-principles investigation.

Discovering highly in-plane anisotropic two-dimensional (2D) semiconductors with multiple superior properties (good stability, widely tunable bandgap and high mobility) are of great interest for fundamental studies and for developments of novel (opto)electronic devices. By means of state-of-the-art first-principles calculations, herein we present a thorough investigation on the stability, electronic properties and promising applications of previously unexplored 2D semiconductors-gold-selenium (ß-AuSe) with strong in-plane anisotropy, whose layered bulk counterpart was synthesized fifty years ago. We show that they have stable structures, widely tunable bandgap varying from 1.66 eV in monolayer to 0.70 eV in five-layer, strong light absorption coefficient (~105 cm-1) within the whole visible light range, and high/ultrahigh carrier mobility (103-105 cm2 V -1 s -1). More importantly, they show highly in-pane anisotropic behaviors in absorption coefficients, photoconductance and carrier mobility. Especially, the anisotropic ratio of carrier mobility is much higher than the literature reported ones. The above findings show that the in-plane anisotropic 2D ß-AuSe are promising candidates for developing polarization-sensitive photodetectors, synaptic devices and micro digital inverters based on multiple superior properties and highly anisotropic behaviors. Besides, few-layer ß-AuSe systems can serve as channel materials in field-effect transistors with high mobility or be applied in solar cells with strong light absorption. Our findings demonstrate that few-layer 2D ß-AuSe have great potential for multifunctional applications and thus stimulate immediately experimental interests.

Multifunctional two-dimensional semiconductors SnP3: universal mechanism of layer-dependent electronic phase transition.

Two-dimensional (2D) semiconductors SnP3 are predicted, from first-principles calculations, to host moderate band gaps (0.72 eV for monolayer and 1.07 eV for bilayer), ultrahigh carrier mobility (∼104 cm2 V-1 s-1 for bilayer), strong absorption coefficients (∼105 cm-1) and good stability. Moreover, the band gap can be modulated from an indirect character into a direct one via strain engineering. For experimental accessibility, the calculated exfoliation energies of monolayer and bilayer SnP3 are smaller than those of the common arsenic-type honeycomb structures GeP3 and InP3. More importantly, a semiconductor-to-metal transition is discovered with the layer number N > 2. We demonstrate, in remarkable contrast to the previous understandings, that such phase transition is largely driven by the correlation between lone-pair electrons of interlayer Sn and P atoms. This mechanism is universal for analogues phase transitions in arsenic-type honeycomb structures (GeP3, InP3 and SnP3).

Understanding and tuning the quantum-confinement effect and edge magnetism in zigzag graphene nanoribbon.

The electronic structure of zigzag graphene nanoribbon (ZGNR) is studied using density functional theory. The mechanisms underlying the quantum-confinement effect and edge magnetism in ZGNR are systematically investigated by combining the simulated results and some useful analytic models. The quantum-confinement effect and the inter-edge superexchange interaction can be tuned by varying the ribbon width, and the spin polarization and direct exchange splitting of the edge states can be tuned by varying their electronic occupations. The two edges of ZGNR can be equally or unequally tuned by charge doping or Li adsorption, respectively. The Li adatom has a site-selective adsorption on ZGNR, and it is a nondestructive and memorable approach to effectively modify the edge states in ZGNR. These systematic understanding and effective tuning of ZGNR electronics presented in this work are helpful for further investigation and application of ZGNR and other magnetic graphene systems.