ABSTRACT
This paper presents a comprehensive study of the behavior of surface charges in ballistic deflection transistors, at room temperature, where the in-plane geometry associating two drains with two gates in push-pull modes allows the control of electron path. Monte Carlo simulations were performed and compared with experimental data by using different models for accounting for surface charge effects. The simple model which assumes a constant and uniform value of the surface charge provides good results at equilibrium, but it is not able to correctly reproduce the BDT's complex behavior when biased. We have confirmed that for a correct description of the device operation it is necessary to use a model allowing the surface charge to adapt itself locally to the carrier concentration in its surroundings.
