Measuring the Berry phase of graphene from wavefront dislocations in Friedel oscillations.

Electronic band structures dictate the mechanical, optical and electrical properties of crystalline solids. Their experimental determination is therefore crucial for technological applications. Although the spectral distribution in energy bands is routinely measured by various techniques1, it is more difficult to access the topological properties of band structures such as the quantized Berry phase, γ, which is a gauge-invariant geometrical phase accumulated by the wavefunction along an adiabatic cycle2. In graphene, the quantized Berry phase γ = π accumulated by massless relativistic electrons along cyclotron orbits is evidenced by the anomalous quantum Hall effect4,5. It is usually thought that measuring the Berry phase requires the application of external electromagnetic fields to force the charged particles along closed trajectories3. Contradicting this belief, here we demonstrate that the Berry phase of graphene can be measured in the absence of any external magnetic field. We observe edge dislocations in oscillations of the charge density ρ (Friedel oscillations) that are formed at hydrogen atoms chemisorbed on graphene. Following Nye and Berry6 in describing these topological defects as phase singularities of complex fields, we show that the number of additional wavefronts in the dislocation is a real-space measure of the Berry phase of graphene. Because the electronic dispersion relation can also be determined from Friedel oscillations7, our study establishes the charge density as a powerful observable with which to determine both the dispersion relation and topological properties of wavefunctions. This could have profound consequences for the study of the band-structure topology of relativistic and gapped phases in solids.

Unraveling the intrinsic and robust nature of van Hove singularities in twisted bilayer graphene by scanning tunneling microscopy and theoretical analysis.

Extensive scanning tunneling microscopy and spectroscopy experiments complemented by first-principles and parametrized tight binding calculations provide a clear answer to the existence, origin, and robustness of van Hove singularities (vHs) in twisted graphene layers. Our results are conclusive: vHs due to interlayer coupling are ubiquitously present in a broad range (from 1° to 10°) of rotation angles in our graphene on 6H-SiC(000-1) samples. From the variation of the energy separation of the vHs with the rotation angle we are able to recover the Fermi velocity of a graphene monolayer as well as the strength of the interlayer interaction. The robustness of the vHs is assessed both by experiments, which show that they survive in the presence of a third graphene layer, and by calculations, which test the role of the periodic modulation and absolute value of the interlayer distance. Finally, we clarify the role of the layer topographic corrugation and of electronic effects in the apparent moiré contrast measured on the STM images.