ABSTRACT
Germanium (Ge) is a promising candidate for a CMOS compatible laser diode. This is due to its compatibility with Silicon (Si) and its ability to be converted into a direct band gap material by applying tensile strain. In particular uniaxial suspended Ge bridges have been extensively explored due to their ability to introduce high tensile strain. There have been two recent demonstrations of low-temperature optically-pumped lasing in these bridges but no room temperature operation accredit to insufficient strain and poor thermal management. In this paper we compare uniaxial bridges with polyaxial bridges in terms of mechanical stress and thermal management using finite element modelling (FEM). The stress simulations reveal that polyaxial bridges suffer from extremely large corner stresses which prevent larger strain from being introduced compared with uniaxial bridges. Thermal simulations however reveal that they are much less thermally sensitive than uniaxial bridges which may indicate lower optical losses. Bridges were fabricated and Raman spectroscopy was used to validate the results of the simulations. We postulate that polyaxial bridges could offer many advantages over their uniaxial counterparts as potential laser devices.
