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1.
Opt Lett ; 39(17): 5018-21, 2014 Sep 01.
Article in English | MEDLINE | ID: mdl-25166063

ABSTRACT

Over 3.5 W of continuous-wave power at 3.4 µm was obtained by single-pass difference frequency mixing of 1.064 and 1.55 µm fiber lasers in a 5 cm long periodically poled lithium niobate crystal. Good agreement was obtained between the observed temperature dependence of the generated power and the prediction from focused Gaussian beam theory.

2.
Opt Lett ; 38(3): 320-2, 2013 Feb 01.
Article in English | MEDLINE | ID: mdl-23381424

ABSTRACT

Tunable, mid-infrared radiation was obtained by frequency doubling of a continuous-wave CO(2) laser in orientation-patterned GaAs crystal. Active cooling of the crystal minimized pump-induced thermal effects, allowing generation of output powers exceeding 300 mW across the wavelength range of 4.63-4.78 µm.

3.
Opt Express ; 17(11): 8741-8, 2009 May 25.
Article in English | MEDLINE | ID: mdl-19466123

ABSTRACT

Nonlinear absorption at 1.064 and 1.535 microm wavelengths by two photon and free carrier absorption processes in undoped and Fe doped InP has been investigated. Using picosecond and nanosecond duration lasers, a self-consistent set of the two photon and free carrier absorption coefficients are experimentally obtained through nonlinear transmission measurements for the first time. Reduced carrier recombination lifetime caused a decrease in nonlinear absorption of nanosecond duration laser pulses in Fe doped samples.


Subject(s)
Indium/chemistry , Phosphines/chemistry , Adsorption , Light , Photons , Scattering, Radiation
4.
Appl Opt ; 47(4): 578-82, 2008 Feb 01.
Article in English | MEDLINE | ID: mdl-18239718

ABSTRACT

Measurements of optical transmission and several thermal properties of Hg(1-x)Cd(x)Te alloys are reported for a few values of the alloy composition parameter x, which was determined by a microprobe technique. The values of the thermal diffusivity, specific heat, and thermal conductivity were measured using the laser-flash method. These results are reported at four discrete temperatures between 90 and 400 K and compared to those of three well-characterized semiconductor materials: Si, InAs, and InSb.

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