Epitaxial single-crystal rare-earth oxide in horizontal slot waveguide for silicon-based integrated active photonic devices.

We have epitaxially grown high-quality single-crystal rare-earth oxide thin films, including Gd2O3 and erbium-incorporated (ErGd)2O3, on silicon-on-insulator substrate, and investigated their optical properties when embedded in horizontal slot waveguides. (ErGd)2O3 with an erbium concentration in the mid-1021 cm-3 range shows well-resolved Stark-split photoluminescence emission peaks in the telecommunications band and a photoluminescence lifetime-concentration product as large as 2.67×1018 s·cm-3 at room-temperature. Using these materials, horizontal slot waveguides with strong optical confinement in low-refractive-index rare-earth oxide layers, have been fabricated for silicon-based integrated active photonic devices. Thanks to the strong light-matter interaction, a large waveguide modal absorption of 88 dB/cm related to erbium ions is achieved, leading to a large potential optical gain. Intense emissions from the waveguides are also observed, with a radiation efficiency on the order of 10-4. These results indicate that a combination of epitaxial rare-earth oxide thin films and horizontal slot waveguides provides a promising platform for light amplification and generation on silicon.

Optical frequency distribution using laser repeater stations with planar lightwave circuits.

We report a cascaded optical fiber link which connects laboratories in RIKEN, the University of Tokyo, and NTT within a 100-km region using a transfer light at 1397 nm, a subharmonic of the Sr clock frequency. The multiple cascaded link employing several laser repeater stations benefits from a wide feedback bandwidth for fiber noise compensation, which allows constructing optical lattice clock networks based on the master-slave configuration. We developed the laser repeater stations based on planar lightwave circuits to significantly reduce the interferometer noise for improved link stability. We implemented a 240-km-long cascaded link in a UTokyo-NTT-UTokyo loop using light sent from RIKEN via a 30-km-long link. In environments with large fiber noise, the link instability is 3 × 10-16 at an averaging time of 1 s and reaches 1 × 10-18 at 2,600 s.

Highly sensitive transient reflection measurement in extreme ultraviolet region for tracking carrier and coherent phonon dynamics.

A highly sensitive method for detecting transient reflection in the extreme ultraviolet (XUV) region was developed on the basis of high-order harmonics for tracking carrier and coherent phonon dynamics. The use of lock-in detection and boxcar integration enables us to observe optical modulation (ΔR/R) as high as 1 × 10-4, and the data acquisition takes only four minutes. XUV transient reflections of bismuth exhibited exponential decay originating from excited carriers and periodic oscillation originating from A1g optical phonons. The linear power dependence of the electronic and phonon amplitudes indicated that one-photon excitation occurred under the experimental conditions. The cosine of the initial phase of the phonon oscillation revealed that a displacive excitation mechanism contributed to phonon generation. The phonon parameters obtained by the XUV and NIR probes were consistent even though their penetration depths were different. The result indicated that the XUV and NIR pulses probe the same excited region, which should be near the surface due to the short penetration depth of the NIR pump pulses. The present highly sensitive means of detecting XUV transient reflections in solid-state materials could be utilized for detecting attosecond dynamics in the future.

Mid-Infrared Lasing of Single Wurtzite InAs Nanowire.

Mid-infrared (MIR) photonics is a developing technology for sensing materials by their characteristic MIR absorptions. Since silicon (Si) is a low-loss material in most of the MIR region, Si photonic structures have been fabricated to guide and confine MIR light, and they allow us to achieve sensitive and integrated sensing devices. However, since the implementation of MIR light sources on Si is still challenging, we propose a thick indium arsenide (InAs) nanowire as an MIR laser that can couple to Si photonic structures with material manipulation. In this study, thick InAs nanowires are grown on an indium phosphide substrate with a self-catalyst vapor-liquid-solid method and transferred to gold-deposited SiO2/Si substrates. Low-temperature microphotoluminescence (PL) spectroscopy shows that InAs nanowires exhibit broad PL peaking at a wavelength of around 2.6 µm (3850 cm-1 in frequency), which corresponds to the bandgap energy of wurtzite InAs. At high optical pump fluences, single InAs nanowire exhibits sharp emission peaks, while their integrated intensity and polarization degree increase abruptly at the threshold pump fluence. These nonlinear behaviors indicate that the MIR lasing action takes place in the InAs nanowire in its cavity mode. Our demonstration of the MIR nanowire laser expands the wavelength coverage and potential application of semiconductor nanowires.

Optical coherent transients in 167Er3+ at telecom-band wavelength.

We demonstrate optical coherent transients in a Λ-like hyperfine energy-level system of Er1673+ in yttrium orthosilicate (Y2SiO5) with telecom-band photons at a zero magnetic field. Spectral hole burning was used to study the temperature dependence of the induced spectral antihole. We find that temperatures below 3.0 K suppress population dissipation induced by electron-phonon interactions sufficiently to enable population initialization in the Λ-like system. Further, the pulse area dependence of photoluminescence (PL) from the Λ-like system was measured at 2.2 K. An optical pump power dependence of PL intensity shows Rabi oscillations that contain two full Rabi cycles at the frequency of 2π×810 kHz. A two-pulse photon echo measurement reveals an optical coherence time of 12 µs. To date, this measured optical coherence time is the longest observed for Er3+ in solids at zero magnetic field. These findings will facilitate optical coherent manipulation of Λ-like Er1673+ electronic states as a quantum memories operating at telecom-band wavelengths.

Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature.

Telecom-band single nanowire lasers made by the bottom-up vapor-liquid-solid approach, which is technologically important in optical fiber communication systems, still remain challenging. Here, we report telecom-band single nanowire lasers operating at room temperature based on multi-quantum-disk InP/InAs heterostructure nanowires. Transmission electron microscopy studies show that highly uniform multi-quantum-disk InP/InAs structure is grown in InP nanowires by self-catalyzed vapor-liquid-solid mode using indium particle catalysts. Optical excitation of individual nanowires yielded lasing in telecom band operating at room temperature. We show the tunability of laser wavelength range in telecom band by modulating the thickness of single InAs quantum disks through quantum confinement along the axial direction. The demonstration of telecom-band single nanowire lasers operating at room temperature is a major step forward in providing practical integrable coherent light sources for optoelectronics and data communication.

Dynamic Control of the Coupling between Dark and Bright Excitons with Vibrational Strain.

We numerically and experimentally investigate strain-induced coupling between dark and bright excitons and its dynamic control using a gallium arsenide (GaAs) micromechanical resonator. Uniaxial strain induced by the mechanical resonance efficiently detunes the exciton energies and modulates the coupling strength via the deformation potential in GaAs. This allows optical access to the long-lived dark states without using any external electromagnetic field. This field-free approach could be expanded to a wide range of solid-state materials, leading to on-chip excitonic memories and circuits based on micromechanical resonators.

Multi-petahertz electron interference in Cr:Al2O3 solid-state material.

Lightwave-field-induced ultrafast electric dipole oscillation is promising for realizing petahertz (1015 Hz: PHz) signal processing in the future. In building the ultrahigh-clock-rate logic operation system, one of the major challenges will be petahertz electron manipulation accompanied with multiple frequencies. Here we study multi-petahertz interference with electronic dipole oscillations in alumina with chromium dopant (Cr:Al2O3). An intense near-infrared lightwave-field induces multiple electric inter-band polarizations, which are characterized by Fourier transform extreme ultraviolet attosecond spectroscopy. The interference results from the superposition state of periodic dipole oscillations of 667 to 383 attosecond (frequency of 1.5 to 2.6 PHz) measured by direct time-dependent spectroscopy and consists of various modulations on attosecond time scale through individual electron dephasing times of the Cr donor-like and Al2O3 conduction band states. The results indicate the possible manipulation of petahertz interference signal with multiple dipole oscillations using material band engineering and such a control will contribute to the study of ultrahigh-speed signal operation.

Diameter-tailored telecom-band luminescence in InP/InAs heterostructure nanowires grown on InP (111)B substrate with continuously-modulated diameter from microscale to nanoscale.

We report diameter-tailored luminescence in telecom band of InP/InAs multi-heterostructure nanowires with continuously-modulated diameter from microscale to nanoscale. By using the self-catalyzed vapor-solid-liquid approach, we tune the indium particle size, and consequently the InP/InAs nanowire diameter, during growth by modulating the flow rate of the indium source material. This technique allows a high degree of continuous tuning in a wide scale from microscale to nanoscale. Hence it offers an original way to bridge the gap between microscale-featured photolithographic and nanoscale-featured nanolithographic processes and to incorporate InAs quantum disks with tunable diameters into a single InP/InAs quantum heterostructure nanowire. We realized site-defined nanowires with nanoscale diameters initiated from site-defined microscale-diameter particles made with a conventional photolithographic process. The luminescence wavelength from InAs quantum disks is directly connected to the nanowire diameter, by which the strain in the InAs quantum disks is tailored. This work provides new opportunities in the fabrication and design of nanowire devices that extends beyond what is achievable with the current technologies and enables the nanowire shape to be engineered thus offering the potential to broaden the application range of nanowire devices.

Drift-Induced Enhancement of Cubic Dresselhaus Spin-Orbit Interaction in a Two-Dimensional Electron Gas.

We investigated the effect of an in-plane electric field on drifting spins in a GaAs quantum well. Kerr rotation images of the drifting spins revealed that the spin precession wavelength increases with increasing drift velocity regardless of the transport direction. A model developed for drifting spins with a heated electron distribution suggests that the in-plane electric field enhances the effective magnetic field component originating from the cubic Dresselhaus spin-orbit interaction.

Optical nonlinearity enhancement with graphene-decorated silicon waveguides.

Broadband on-chip optical frequency combs (OFCs) are important for expanding the functionality of photonic integrated circuits. Here, we demonstrate a huge local optical nonlinearity enhancement using graphene. A waveguide is decorated with graphene by precisely manipulating graphene's area and position. Our approach simultaneously achieves both an extremely efficient supercontinuum and ultra-short pulse generation. With our graphene-decorated silicon waveguide (G-SWG), we have achieved enhanced spectral broadening of femtosecond pump pulses, along with an eightfold increase in the output optical intensity at a wavelength approximately 200 nm shorter than that of the pump pulses. We also found that this huge nonlinearity works as a compressor that effectively compresses pulse width from 80 to 15.7 fs. Our results clearly show the potential for our G-SWG to greatly boost the speed and capacity of future communications with lower power consumption, and our method will further decrease the required pump laser power because it can be applied to decorate various kinds of waveguides with various two-dimensional materials.

Cavity-less on-chip optomechanics using excitonic transitions in semiconductor heterostructures.

The hybridization of semiconductor optoelectronic devices and nanomechanical resonators provides a new class of optomechanical systems in which mechanical motion can be coupled to light without any optical cavities. Such cavity-less optomechanical systems interconnect photons, phonons and electrons (holes) in a highly integrable platform, opening up the development of functional integrated nanomechanical devices. Here we report on a semiconductor modulation-doped heterostructure-cantilever hybrid system, which realizes efficient cavity-less optomechanical transduction through excitons. The opto-piezoelectric backaction from the bound electron-hole pairs enables us to probe excitonic transition simply with a sub-nanowatt power of light, realizing high-sensitivity optomechanical spectroscopy. Detuning the photon energy from the exciton resonance results in self-feedback cooling and amplification of the thermomechanical motion. This cavity-less on-chip coupling enables highly tunable and addressable control of nanomechanical resonators, allowing high-speed programmable manipulation of nanomechanical devices and sensor arrays.

Bridging the Gap between the Nanometer-Scale Bottom-Up and Micrometer-Scale Top-Down Approaches for Site-Defined InP/InAs Nanowires.

This work presents a method that bridges the gap between the nanometer-scale bottom-up and micrometer-scale top-down approaches for site-defined nanostructures, which has long been a significant challenge for applications that require low-cost and high-throughput manufacturing processes. We realized the bridging by controlling the seed indium nanoparticle position through a self-assembly process. Site-defined InP nanowires were then grown from the indium-nanoparticle array in the vapor-liquid-solid mode through a "seed and grow" process. The nanometer-scale indium particles do not always occupy the same locations within the micrometer-scale open window of an InP exposed substrate due to the scale difference. We developed a technique for aligning the nanometer-scale indium particles on the same side of the micrometer-scale window by structuring the surface of a misoriented InP (111)B substrate. Finally, we demonstrated that the developed method can be used to grow a uniform InP/InAs axial-heterostructure nanowire array. The ability to form a heterostructure nanowire array with this method makes it possible to tune the emission wavelength over a wide range by employing the quantum confinement effect and thus expand the application of this technology to optoelectronic devices. Successfully pairing a controllable bottom-up growth technique with a top-down substrate preparation technique greatly improves the potential for the mass-production and widespread adoption of this technology.

Controlled 1.1-1.6 µm luminescence in gold-free multi-stacked InAs/InP heterostructure nanowires.

We report controlled 1.1-1.6 µm luminescence in gold-free multi-stacked InAs/InP heterostructure nanowires (NWs). We realized the NWs by using an indium-particle-assisted vapor-liquid-solid synthesis approach. The growth temperature, as low as 320 °C, enables the formation of an atomically abrupt InP/InAs interface by supressing the diffusion and weakening the reservoir effect in the indium droplet. The low growth temperature also enables us to grow multi-stacked InAs/InP NWs in the axial direction without any growth on the NW side face. The high controllability of the growth technology ensures that the luminescence can be tailored by the thickness of InAs segment in InP NWs and cover the 1.3-1.5 µm telecommunication window range. By using the nanoscale-spatial-resolution technology combing cathodoluminescence with scanning electron microscopy, we directly correlated the site of different-thickness InAs segments with its luminescence property in a single NW and demonstrate the InAs-thickness-controlled energy of optical emission in 1.1-1.6 µm.

Characterizing inner-shell with spectral phase interferometry for direct electric-field reconstruction.

In many atomic, molecular and solid systems, Lorentzian and Fano profiles are commonly observed in a broad research fields throughout a variety of spectroscopies. As the profile structure is related to the phase of the time-dependent dipole moment, it plays an important role in the study of quantum properties. Here we determine the dipole phase in the inner-shell transition using spectral phase interferometry for direct electric-field reconstruction (SPIDER) with isolated attosecond pulses (IAPs). In addition, we propose a scheme for pulse generation and compression by manipulating the inner-shell transition. The electromagnetic radiation generated by the transition is temporally compressed to a few femtoseconds in the extreme ultraviolet (XUV) region. The proposed pulse-compression scheme may provide an alternative route to producing attosecond pulses of light.

Topological Raman band in the carbon nanohorn.

Raman spectroscopy has been used in chemistry and physics to investigate the fundamental process involving light and phonons. The carbon nanohorn introduces a new subject to Raman spectroscopy, namely topology. We show theoretically that a photoexcited carrier with a nonzero winding number activates a topological D Raman band through the Aharonov-Bohm effect. The topology-induced D Raman band can be distinguished from the ordinary D Raman band for a graphene edge by its peak position.

Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface.

An ultrathin (one monolayer thick) InN single quantum well (SQW) formed on a step-free GaN surface shows very sharp violet PL emission. The size (16 µm in diameter) is large enough for state-of-the-art nanotechnology to handle. Longer wavelength emissions, such as green and red, are expected by increasing the thickness of the SQW through the utilization of the quantum size effect.

VLS growth of alternating InAsP/InP heterostructure nanowires for multiple-quantum-dot structures.

We investigated the Au-assisted growth of alternating InAsP/InP heterostructures in wurtzite InP nanowires on InP(111)B substrates for constructing multiple-quantum-dot structures. Vertical InP nanowires without stacking faults were obtained at a high PH(3)/TMIn mole flow ratio of 300-1000. We found that the growth rate changed largely when approximately 40 min passed. Ten InAsP layers were inserted in the InP nanowire, and it was found that both the InP growth rate and the background As level increased after the As supply. We also grew the same structure using TBAs/TBP and could reduce the As level in the InP segments. A simulation using a finite-difference time-domain method suggests that the nanowire growth was dominated by the diffusion of the reaction species with long residence time on the surface. For TBAs/TBP, when the source gases were changed, the formed surface species showed a short diffusion length so as to reduce the As background after the InAsP growth.

Vibration amplification, damping, and self-oscillations in micromechanical resonators induced by optomechanical coupling through carrier excitation.

Carrier-induced dynamic backaction in micromechanical resonators is demonstrated. Thermal vibration of an n-GaAs/i-GaAs bilayer cantilever is amplified by optical band-gap excitation, and for the excitation power above a critical value, self-oscillations are induced. These phenomena are found in the [1[over ¯]10]-oriented cantilever, whereas the damping (deamplification) is observed in the [1[over ¯]10] orientation. This optomechanical coupling does not require any optical cavities but is instead based on the piezoelectric effect that is generated by photoinduced carriers.

Parallel-aligned GaAs nanowires with 110 orientation laterally grown on [311]B substrates via the gold-catalyzed vapor-liquid-solid mode.

We report parallel aligned GaAs nanowires (NWs) with 110 orientation laterally grown on [311]B substrates via the vapor-liquid-solid mode and demonstrate their controllability and growth mechanism. We control the size, density, and site of the lateral NWs by using size- and density-selective Au colloidal particles and Au dot arrays defined by electron-beam lithography. The lateral NWs grow only along the [110] and [Formula: see text] directions and formation of the stable facets of (111)B and (001) on the sides of the lateral NWs is crucial for lateral NW growth. We clarify the growth mechanism by comparing the growth results on [311]B, (311)A, and (001) substrates and the surface energy change of lateral and freestanding NWs.