Making Graphene Nanoribbons Photoluminescent.

We demonstrate the alignment-preserving transfer of parallel graphene nanoribbons (GNRs) onto insulating substrates. The photophysics of such samples is characterized by polarized Raman and photoluminescence (PL) spectroscopies. The Raman scattered light and the PL are polarized along the GNR axis. The Raman cross section as a function of excitation energy has distinct excitonic peaks associated with transitions between the one-dimensional parabolic subbands. We find that the PL of GNRs is intrinsically low but can be strongly enhanced by blue laser irradiation in ambient conditions or hydrogenation in ultrahigh vacuum. These functionalization routes cause the formation of sp3 defects in GNRs. We demonstrate the laser writing of luminescent patterns in GNR films for maskless lithography by the controlled generation of defects. Our findings set the stage for further exploration of the optical properties of GNRs on insulating substrates and in device geometries.

Effect of nematic ordering on electronic structure of FeSe.

Electronically driven nematic order is often considered as an essential ingredient of high-temperature superconductivity. Its elusive nature in iron-based superconductors resulted in a controversy not only as regards its origin but also as to the degree of its influence on the electronic structure even in the simplest representative material FeSe. Here we utilized angle-resolved photoemission spectroscopy and density functional theory calculations to study the influence of the nematic order on the electronic structure of FeSe and determine its exact energy and momentum scales. Our results strongly suggest that the nematicity in FeSe is electronically driven, we resolve the recent controversy and provide the necessary quantitative experimental basis for a successful theory of superconductivity in iron-based materials which takes into account both, spin-orbit interaction and electronic nematicity.

Atomically precise semiconductor--graphene and hBN interfaces by Ge intercalation.

The full exploration of the potential, which graphene offers to nanoelectronics requires its integration into semiconductor technology. So far the real-world applications are limited by the ability to concomitantly achieve large single-crystalline domains on dielectrics and semiconductors and to tailor the interfaces between them. Here we show a new direct bottom-up method for the fabrication of high-quality atomically precise interfaces between 2D materials, like graphene and hexagonal boron nitride (hBN), and classical semiconductor via Ge intercalation. Using angle-resolved photoemission spectroscopy and complementary DFT modelling we observed for the first time that epitaxially grown graphene with the Ge monolayer underneath demonstrates Dirac Fermions unaffected by the substrate as well as an unperturbed electronic band structure of hBN. This approach provides the intrinsic relativistic 2D electron gas towards integration in semiconductor technology. Hence, these new interfaces are a promising path for the integration of graphene and hBN into state-of-the-art semiconductor technology.

Observation of a universal donor-dependent vibrational mode in graphene.

Electron-phonon coupling and the emergence of superconductivity in intercalated graphite have been studied extensively. Yet, phonon-mediated superconductivity has never been observed in the 2D equivalent of these materials, doped monolayer graphene. Here we perform angle-resolved photoemission spectroscopy to try to find an electron donor for graphene that is capable of inducing strong electron-phonon coupling and superconductivity. We examine the electron donor species Cs, Rb, K, Na, Li, Ca and for each we determine the full electronic band structure, the Eliashberg function and the superconducting critical temperature Tc from the spectral function. An unexpected low-energy peak appears for all dopants with an energy and intensity that depend on the dopant atom. We show that this peak is the result of a dopant-related vibration. The low energy and high intensity of this peak are crucially important for achieving superconductivity, with Ca being the most promising candidate for realizing superconductivity in graphene.

Controlled assembly of graphene-capped nickel, cobalt and iron silicides.

The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace traditional silicon technology. This gave rise to the vast amount of researches on how to fabricate high-quality graphene and graphene nanocomposites that is currently going on. Here we show that graphene can be successfully integrated with the established metal-silicide technology. Starting from thin monocrystalline films of nickel, cobalt and iron, we were able to form metal silicides of high quality with a variety of stoichiometries under a Chemical Vapor Deposition grown graphene layer. These graphene-capped silicides are reliably protected against oxidation and can cover a wide range of electronic materials/device applications. Most importantly, the coupling between the graphene layer and the silicides is rather weak and the properties of quasi-freestanding graphene are widely preserved.

Nitrogen-doped graphene: efficient growth, structure, and electronic properties.

A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 80% of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of ∼8×10(12) electrons per cm2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoemission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.

Graphene epitaxy by chemical vapor deposition on SiC.

We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well-developed epitaxial graphene growth by Si sublimation that has been known for decades. (1) CVD growth is much less sensitive to SiC surface defects resulting in high electron mobilities of ∼1800 cm(2)/(V s) and enables the controlled synthesis of a determined number of graphene layers with a defined doping level. The high quality of graphene is evidenced by a unique combination of angle-resolved photoemission spectroscopy, Raman spectroscopy, transport measurements, scanning tunneling microscopy and ellipsometry. Our measurements indicate that CVD grown graphene is under less compressive strain than its epitaxial counterpart and confirms the existence of an electronic energy band gap. These features are essential for future applications of graphene electronics based on wafer scale graphene growth.

Tunable band gap in hydrogenated quasi-free-standing graphene.

We show by angle-resolved photoemission spectroscopy that a tunable gap in quasi-free-standing monolayer graphene on Au can be induced by hydrogenation. The size of the gap can be controlled via hydrogen loading and reaches approximately 1.0 eV for a hydrogen coverage of 8%. The local rehybridization from sp(2) to sp(3) in the chemical bonding is observed by X-ray photoelectron spectroscopy and X-ray absorption and allows for a determination of the amount of chemisorbed hydrogen. The hydrogen induced gap formation is completely reversible by annealing without damaging the graphene. Calculations of the hydrogen loading dependent core level binding energies and the spectral function of graphene are in excellent agreement with photoemission experiments. Hydrogenation of graphene gives access to tunable electronic and optical properties and thereby provides a model system to study hydrogen storage in carbon materials.

Accurate surface and adsorption energies from many-body perturbation theory.

Kohn-Sham density functional theory is the workhorse computational method in materials and surface science. Unfortunately, most semilocal density functionals predict surfaces to be more stable than they are experimentally. Naively, we would expect that consequently adsorption energies on surfaces are too small as well, but the contrary is often found: chemisorption energies are usually overestimated. Modifying the functional improves either the adsorption energy or the surface energy but always worsens the other aspect. This suggests that semilocal density functionals possess a fundamental flaw that is difficult to cure, and alternative methods are urgently needed. Here we show that a computationally fairly efficient many-electron approach, the random phase approximation to the correlation energy, resolves this dilemma and yields at the same time excellent lattice constants, surface energies and adsorption energies for carbon monoxide and benzene on transition-metal surfaces.

Second-order Møller-Plesset perturbation theory applied to extended systems. I. Within the projector-augmented-wave formalism using a plane wave basis set.

We present an implementation of the canonical formulation of second-order Møller-Plesset (MP2) perturbation theory within the projector-augmented-wave method under periodic boundary conditions using a plane wave basis set. To demonstrate the accuracy of our approach we show that our result for the atomization energy of a LiH molecule at the Hartree-Fock+MP2 level is in excellent agreement with well converged Gaussian-type-orbital calculations. To establish the feasibility of employing MP2 perturbation theory in its canonical form to systems that are periodic in three dimensions we calculated the cohesive energy of bulk LiH.

Electron-electron correlation in graphite: a combined angle-resolved photoemission and first-principles study.

The full three-dimensional dispersion of the pi bands, Fermi velocities, and effective masses are measured with angle-resolved photoemission spectroscopy and compared to first-principles calculations. The band structure by density-functional theory underestimates the slope of the bands and the trigonal warping effect. Including electron-electron correlation on the level of the GW approximation, however, yields remarkable improvement in the vicinity of the Fermi level. This demonstrates the breakdown of the independent electron picture in semimetallic graphite and points toward a pronounced role of electron correlation for the interpretation of transport experiments and double-resonant Raman scattering for a wide range of carbon based materials.

Effects of the reaction atmosphere composition on the synthesis of single and multiwalled nitrogen-doped nanotubes.

Single and multiwalled nitrogen-doped carbon nanotubes were grown by chemical vapor deposition varying the feedstock composition between pure acetonitrile and ethanol/acetonitrile mixtures. The advantage of using CN sources that develop close vapor pressure values has been used in order to elucidate the effects of the reaction atmosphere in the synthesis of N-doped nanotubes. Our findings show that the morphology of the nanotube material depends strongly on the composition of the reaction atmosphere. When carrying out the experiments in an atmosphere solely determined by the vapor pressure of the feedstock components, improved homogeneity is achieved with pure CN sources or low concentration of the foreign solute. Under these conditions the temperature has strong influence in the diameter distribution.

Strain-induced interference effects on the resonance Raman cross section of carbon nanotubes.

In this Letter, we report the effects of strain on the electronic properties of single-wall carbon nanotubes. When we normalize the electronic transition energies to the corresponding values obtained for unstrained tubes, we obtain that, regardless of the tube diameter, all the data collapse onto universal curves following an n - m = constant family pattern. In the case of metallic tubes, quantum interference effects on the Raman cross section are predicted for strained tubes when the energies of the lower and the upper components have nearly the same values. Experimental evidence for the strain-induced Raman cross section changes is observed in single nanotube spectroscopy.

Origin of the fine structure of the Raman D band in single-wall carbon nanotubes.

Experiments show that the D bands of bundles of single wall carbon nanotubes have a fine structure, apparently consisting of more than one subband. Using the double resonance theory, we calculate for the first time the D band for a sample of a given diameter distribution for seven different laser excitation energies in a wide range. In addition, a detailed theoretical explanation for the fine structure of the D band is provided. The calculated results agree well with experiments and show that the main factors in determining the fine structure are an enhanced trigonal warping of the phonon dispersion, the presence of a diameter distribution in the sample, and--most importantly--the resonance from the Van Hove singularities.

Phonon trigonal warping effect in graphite and carbon nanotubes.

The one-dimensional structure of carbon nanotubes leads to quantum confinement of the wave vectors for the electronic states, thus making the double resonance Raman process selective, not only of the magnitude, but also of the direction of the phonon wave vectors. This additional selectivity allows us to reconstruct the phonon dispersion relations of 2D graphite, by probing individual single wall carbon nanotubes of different chiralities by resonance Raman spectroscopy, and using different laser excitation energies. In particular, we are able to measure the anisotropy, or the trigonal warping effect, in the phonon dispersion relations around the hexagonal corner of the Brillouin zone of graphite.

The concept of cutting lines in carbon nanotube science.

A review is presented of one-dimensional cutting lines that are utilized to obtain the physical properties of carbon nanotubes from the corresponding properties of graphite by the zone-folding scheme. Quantization effects in general low-dimensional systems are briefly discussed, followed by a more detailed consideration of one-dimensional single-wall carbon nanotubes. The geometrical structure of the nanotube is described, from which quantum confined states are constructed. These allowed states in the momentum space of graphite are known as cutting lines. Different representations of the cutting lines in momentum space are introduced. Electronic and phonon dispersion relations for nanotubes are derived by using cutting lines and the zone-folding scheme. The relation between cutting lines and singularities in the electronic density of states is considered. The selection rules for carbon nanotubes are shown to be directly connected with the cutting lines. Different experimental techniques are considered that confirm the validity of cutting lines and the zone-folding approach.