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1.
Deep-level transient spectroscopy study of narrow SiGe quantum wells with high Ge content.
Schmalz K; Yassievich IN; Collart EJ; Gravesteijn DJ.
Phys Rev B Condens Matter ; 54(23): 16799-16812, 1996 Dec 15.
Article in English | MEDLINE | ID: mdl-9985810
2.
Donor activation and electronic screening at an antimony delta layer in silicon.
Thornton JM; Cole RJ; Gravesteijn DJ; Weightman P.
Phys Rev B Condens Matter ; 54(11): 7972-7978, 1996 Sep 15.
Article in English | MEDLINE | ID: mdl-9984474
3.
Diffusion in strained Si(Ge).
Cowern NE; Zalm PC; van der Sluis P; Gravesteijn DJ; de Boer WB.
Phys Rev Lett ; 72(16): 2585-2588, 1994 Apr 18.
Article in English | MEDLINE | ID: mdl-10055921
4.
Experiments on atomic-scale mechanisms of diffusion.
Cowern NE; van de Walle GF; Gravesteijn DJ; Vriezema CJ.
Phys Rev Lett ; 67(2): 212-215, 1991 Jul 08.
Article in English | MEDLINE | ID: mdl-10044523
5.
Impurity diffusion via an intermediate species: The B-Si system.
Cowern NE; Janssen KT; van de Walle GF; Gravesteijn DJ.
Phys Rev Lett ; 65(19): 2434-2437, 1990 Nov 05.
Article in English | MEDLINE | ID: mdl-10042547
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