Optical study of electron and acoustic phonon confinement in ultrathin-body germanium-on-insulator nanolayers.

Nanoelectronics require semiconductor nanomaterials with high electron mobility like Ge nanolayers. Phonon and electron states in nanolayers undergo size-dependent changes induced by confinement and surface effects. Confined electrons and acoustic phonons determine layer optical, electric and thermal properties. Despite scientific and practical significance, their experimental studies in individual nanolayers are still lacking. Thanks to recent progress in the fabrication of high-quality nanolayers, here, we report the thickness dependencies of Raman spectra of acoustic phonons and optical spectra of electrons confined in germanium-on-insulator (GeOI) nanolayers with thicknesses TGeOI = 1-20 nm. We show that for TGeOI > 5 nm, both GeOI acoustic phonon Raman spectra and the E1 electron energy gap display dependencies on TGeOI which are reasonably described by the corresponding phonon and electron confinement theories. Accordingly, TGeOI can be probed using acoustic phonon Raman spectra at TGeOI > 5 nm. However, both confinement theories fail to describe GeOI thickness dependencies at TGeOI < 5 nm. We attribute this discrepancy to an increased influence of the Ge-GeO2 interface disorder with TGeOI reduction. The acoustic phonon data suggest a decrease of Ge normal-to-the-layer longitudinal sound velocity. Generation of interface-disorder-induced dispersionless phonons might contribute to this. The change in GeOI phonon properties at TGeOI < 5 nm might influence E1(TGeOI) dependence via a change in the GeOI electron-phonon interaction. We demonstrate that the Al2O3 coating improves the agreement between experimental and confinement theories, probably, via reduction of disorder at the Ge-GeOx-Al2O3-interface. Our results are important for control of nanolayer-confined electrons and phonons with benefits for modern and future nanoelectronic devices.

Three dimensional design of silver nanoparticle assemblies embedded in dielectrics for Raman spectroscopy enhancement and dark-field imaging.

A strategy to design and fabricate hybrid metallic-dielectric substrates for optical spectroscopy and imaging is proposed. Different architectures consisting of three-dimensional patterns of metallic nanoparticles embedded in dielectric layers are conceived to simultaneously exploit the optical interference phenomenon in stratified media and localized surface plasmon resonances on metal nanoparticles. These structures are based on a simultaneous control of opto-electronic properties at three scales (3S) (~2/20/200 nm) and along three directions (3D). By ultralow energy ion implantation through a microfabricated stencil we precisely control the size, density, and location of silver nanoparticles embedded in silica/silicon thin films. Elastic (Rayleigh) and inelastic (Raman) scattering imaging assisted by simulations were used to analyze the optical response of these "3S-3D" patterned layers. The reflectance contrast is strongly enhanced when resonance conditions between the stationary electromagnetic field in the dielectric matrix and the localized plasmon resonance in the silver nanoparticles are realized. The potential of these 3S-3D metal-dielectric structures as surface-enhanced Raman scattering substrates is demonstrated. These novel kinds of plasmonic-photonic architectures are reproducible and stable; they preserve flat and chemically uniform surfaces, offering opportunities for the development of efficient and reusable substrates for optical spectroscopy and imaging enhancement.

Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application.

Ge nanocrystals (Ge-NCs) embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV) ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV) have been chosen for the evolution of Ge-NCs, which have been found to possess significant changes in structural and chemical properties of the Ge+-implanted dielectric films, and well reflected in the charge storage properties of the Al/SiN/Ge-NC + SiN/HfO2/SiO2/Si metal-insulator-semiconductor (MIS) memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV) sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample, indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of ± 6 V with good retention properties, indicating the feasibility of these stack structures for low operating voltage, non-volatile memory devices.