Dark Current Modeling for a Polyimide-Amorphous Lead Oxide-Based Direct Conversion X-ray Detector.

The reduction of the dark current (DC) to a tolerable level in amorphous selenium (a-Se) X-ray photoconductors was one of the key factors that led to the successful commercialization of a-Se-based direct conversion flat panel X-ray imagers (FPXIs) and their widespread clinical use. Here, we discuss the origin of DC in another X-ray photoconductive structure that utilizes amorphous lead oxide (a-PbO) as an X-ray-to-charge transducer and polyimide (PI) as a blocking layer. The transient DC in a PI/a-PbO detector is measured at different applied electric fields (5-20 V/µm). The experimental results are used to develop a theoretical model describing the electric field-dependent transient behavior of DC. The results of the DC kinetics modeling show that the DC, shortly after the bias application, is primarily controlled by the injection of holes from the positively biased electrode and gradually decays with time to a steady-state value. DC decays by the overarching mechanism of an electric field redistribution, caused by the accumulation of trapped holes in deep localized states within the bulk of PI. Thermal generation and subsequent multiple-trapping (MT) controlled transport of holes within the a-PbO layer governs the steady-state value at all the applied fields investigated here, except for the largest applied field of 20 V/µm. This suggests that a thicker layer of PI would be more optimal to suppress DC in the PI/a-PbO detector presented here. The model can be used to find an approximate optimal thickness of PI for future iterations of PI/a-PbO detectors without the need for time and labor-intensive experimental trial and error. In addition, we show that accounting for the field-induced charge carrier release from traps, enhanced by charge hopping transitions between the traps, yields an excellent fit between the experimental and simulated results, thus, clarifying the dynamic process of reaching a steady-state occupancy level of the deep localized states in the PI. Practically, the electric field redistribution causes the internal field to increase in magnitude in the a-PbO layer, thus improving charge collection efficiency and temporal performance over time, as confirmed by experimental results. The electric field redistribution can be implemented as a warm-up time for a-PbO-based detectors.

Comparative Analysis of Multilayer Lead Oxide-Based X-ray Detector Prototypes.

Lead oxide (PbO) photoconductors are proposed as X-ray-to-charge transducers for the next generation of direct conversion digital X-ray detectors. Optimized PbO-based detectors have potential for utilization in high-energy and dynamic applications of medical X-ray imaging. Two polymorphs of PbO have been considered so far for imaging applications: polycrystalline lead oxide (poly-PbO) and amorphous lead oxide (a-PbO). Here, we provide the comparative analysis of two PbO-based single-pixel X-ray detector prototypes: one prototype employs only a layer of a-PbO as the photoconductor while the other has a combination of a-PbO and poly-PbO, forming a photoconductive bilayer structure of the same overall thickness as in the first prototype. We characterize the performance of these prototypes in terms of electron-hole creation energy (W±) and signal lag-major properties that define a material's suitability for low-dose real-time imaging. The results demonstrate that both X-ray photoconductive structures have an adequate temporal response suitable for real-time X-ray imaging, combined with high intrinsic sensitivity. These results are discussed in the context of structural and morphological properties of PbO to better understand the preparation-fabrication-property relationships of this material.

The X-ray Sensitivity of an Amorphous Lead Oxide Photoconductor.

The photoconductor layer is an important component of direct conversion flat panel X-ray imagers (FPXI); thus, it should be carefully selected to meet the requirements for the X-ray imaging detector, and its properties should be clearly understood to develop the most optimal detector design. Currently, amorphous selenium (a-Se) is the only photoconductor utilized in commercial direct conversion FPXIs for low-energy mammographic imaging, but it is not practically feasible for higher-energy diagnostic imaging. Amorphous lead oxide (a-PbO) photoconductor is considered as a replacement to a-Se in radiography, fluoroscopy, and tomosynthesis applications. In this work, we investigated the X-ray sensitivity of a-PbO, one of the most important parameters for X-ray photoconductors, and examined the underlying mechanisms responsible for charge generation and recombination. The X-ray sensitivity in terms of electron-hole pair creation energy, W±, was measured in a range of electric fields, X-ray energies, and exposure levels. W± decreases with the electric field and X-ray energy, saturating at 18-31 eV/ehp, depending on the energy of X-rays, but increases with the exposure rate. The peculiar dependencies of W± on these parameters lead to a conclusion that, at electric fields relevant to detector operation (~10 V/µm), the columnar recombination and the bulk recombination mechanisms interplay in the a-PbO photoconductor.

Bilayer lead oxide X-ray photoconductor for lag-free operation.

Polycrystalline Lead Oxide (poly-PbO) was considered one of the most promising photoconductors for the direct conversion X-ray medical imaging detectors due to its previous success in optical imaging, i.e., as an optical target in so-called Plumbicon video pick-up tubes. However, a signal lag which accompanies X-ray excitation, makes poly-PbO inapplicable as an X-ray-to-charge transducer in real-time X-ray imaging. In contrast, the recently synthesized Amorphous Lead Oxide (a-PbO) photoconductor is essentially lag-free. Here, we report on our approach to a PbO detector where a thin layer of a-PbO is combined with a thick layer of poly-PbO for lag-free operation. In the presented a-PbO/poly-PbO bilayer structure, the poly-PbO layer serves as an X-ray-to-charge transducer while the a-PbO acts as a lag prevention layer. The hole mobility in the a-PbO/poly-PbO bilayer structure was measured by photo-Charge Extraction by Linearly Increasing Voltage technique at different temperatures and electric fields to investigate charge transport properties. It was found that the hole mobility is similar to that in a-Se-currently the only commercially viable photoconductor for the direct conversion X-ray detectors. Evaluation of the X-ray temporal performance demonstrated complete suppression of signal lag, allowing operation of the a-PbO/poly-PbO detector in real-time imaging.

A Probe of Valence and Conduction Band Electronic Structure of Lead Oxide Films for Photodetectors.

We investigate how the electronic structure of amorphous lead oxide (a-PbO) films deposited on ITO substrate is changed after annealing at various temperatures. Both experimental soft X-ray spectroscopic and density functional theory (DFT) based computational techniques are used to explore the electronic structure of this material. X-ray emission, resonant X-ray inelastic scattering, and X-ray absorption spectroscopic techniques are employed to directly probe the valence and conduction bands. We discover that the films are very stable and remain amorphous when exposed to temperatures below 300 °C. An amorphous-to-polycrystalline (α-PbO phase) transformation occurs during annealing at 400 °C. At 500 °C, an alpha to beta phase change is observed. These structural modifications are accompanied by the band gap value changing from 1.4±0.2 eV to 2.0±0.2 eV upon annealing at 400 °C and to 2.6±0.2 eV upon annealing at 500 °C. A difference between surface and bulk structural properties is found for all samples annealed at 500 °C and above; these samples also exhibit an unexpected suppression of O : 2p density of states (DOS) near the bottom of the conduction band, whereas additional electronic states appear well within the valence band. This study provides a significant step forward to understanding the electronic properties of two polymorphic forms of PbO needed for optimization of this material for use in X-ray sensors.