Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers.

A detailed mechanism for heteroepitaxial diamond nucleation under ion bombardment in a microwave plasma enhanced chemical vapour deposition setup on the single crystal surface of iridium is presented. The novel mechanism of Ion Bombardment Induced Buried Lateral Growth (IBI-BLG) is based on the ion bombardment induced formation and lateral spread of epitaxial diamond within a ~1 nm thick carbon layer. Starting from one single primary nucleation event the buried epitaxial island can expand laterally over distances of several microns. During this epitaxial lateral growth typically thousands of isolated secondary nuclei are generated continuously. The unique process is so far only observed on iridium surfaces. It is shown that a diamond single crystal with a diameter of ~90 mm and a weight of 155 carat can be grown from such a carbon film which initially consisted of 2 · 1013 individual grains.

Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond.

Deterministic coupling of single solid-state emitters to nanocavities is the key for integrated quantum information devices. We here fabricate a photonic crystal cavity around a preselected single silicon-vacancy color center in diamond and demonstrate modification of the emitters internal population dynamics and radiative quantum efficiency. The controlled, room-temperature cavity coupling gives rise to a resonant Purcell enhancement of the zero-phonon transition by a factor of 19, coming along with a 2.5-fold reduction of the emitter's lifetime.

Graphene from fingerprints: exhausting the performance of liquid precursor deposition.

Epitaxial graphene is expected to be the only way to obtain large-area sheets of this two-dimensional material for applications on an industrial scale. So far, there are different recipes for epitaxial growth of graphene, using either intrinsic carbon, such as the selective desorption of silicon from a SiC surface, or extrinsic carbon, as via the chemical vapor deposition (CVD) of simple hydrocarbons on transition metal surfaces. In addition, even liquid precursor deposition (LPD) provides well-ordered graphene monolayers. It will be shown that graphene formation on transition metal surfaces by LPD synthesis is a very robust mechanism that even works if carbon is provided in a quite undefined way, namely by using a human fingerprint as a liquid precursor. Graphene growth from fingerprints provides well-ordered monolayers with the same quality as LPD grown graphene using ultrapure synthetic single precursors. The reliability of the self-assembly process of graphene growth on transition metals by LPD therefore offers a simple and extremely robust synthesis route for epitaxial graphene and may give access to production pathways for substrates for which the CVD method fails.

Optical signatures of silicon-vacancy spins in diamond.

Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to date. Recently, this toolbox has expanded to include novel colour centres to realize more efficient spin-photon quantum interfaces. Of these, the silicon-vacancy centre stands out with highly desirable photonic properties. The challenge for utilizing this centre is to realize the hitherto elusive optical access to its electronic spin. Here we report spin-tagged resonance fluorescence from the negatively charged silicon-vacancy centre. Our measurements reveal a spin-state purity approaching unity in the excited state, highlighting the potential of the centre as an efficient spin-photon quantum interface.

Increasing the wear resistance by interstitial alloying with boron via chemical vapor deposition.

The wear resistance of a Rh(111) surface can be strongly increased by interstitial alloying with boron atoms via chemical vapor deposition of trimethylborate [B(OCH3)3] at moderate temperatures of about 800 K. The fragmentation of the precursor results in single boron atoms that are incorporated in the fcc lattice of the substrate, as displayed by X-ray photoelectron diffraction. The penetration depth of the boron atoms is in the range of at least 100 nm with the boron distribution displaying a nearly homogeneous depth profile, as examined by combined X-ray photoelectron spectroscopy and Ar ion etching experiments. Compared to the bare Rh(111) surface, the wear resistance of the boron-doped Rh surface is increased to about 400%, as probed by the scratching experiments with atomic force microscopy. The presented synthesis route provides an easy method for case hardening of micro- or nanoelectromechanical devices (MEMS and NEMS, respectively) at moderate temperatures.

Epitaxial growth of graphene on transition metal surfaces: chemical vapor deposition versus liquid phase deposition.

The epitaxial growth of graphene on transition metal surfaces by ex situ deposition of liquid precursors (LPD, liquid phase deposition) is compared to the standard method of chemical vapor deposition (CVD). The performance of LPD strongly depends on the particular transition metal surface. For Pt(111), Ir(111) and Rh(111), the formation of a graphene monolayer is hardly affected by the way the precursor is provided. In the case of Ni(111), the growth of graphene strongly depends on the applied synthesis method. For CVD of propene on Ni(111), a 1 × 1 structure as expected from the vanishing lattice mismatch is observed. However, in spite of the nearly perfect lattice match, a multi-domain structure with 1 × 1 and two additional rotated domains is obtained when an oxygen-containing precursor (acetone) is provided ex situ.

One- and two-dimensional photonic crystal microcavities in single crystal diamond.

Diamond is an attractive material for photonic quantum technologies because its colour centres have a number of outstanding properties, including bright single photon emission and long spin coherence times. To take advantage of these properties it is favourable to directly fabricate optical microcavities in high-quality diamond samples. Such microcavities could be used to control the photons emitted by the colour centres or to couple widely separated spins. Here, we present a method for the fabrication of one- and two-dimensional photonic crystal microcavities with quality factors of up to 700 in single crystal diamond. Using a post-processing etching technique, we tune the cavity modes into resonance with the zero phonon line of an ensemble of silicon-vacancy colour centres, and we measure an intensity enhancement factor of 2.8. The controlled coupling of colour centres to photonic crystal microcavities could pave the way to larger-scale photonic quantum devices based on single crystal diamond.

STM, SECPM, AFM and Electrochemistry on Single Crystalline Surfaces.

Scanning probe microscopy (SPM) techniques have had a great impact on research fields of surface science and nanotechnology during the last decades. They are used to investigate surfaces with scanning ranges between several 100 mm down to atomic resolution. Depending on experimental conditions, and the interaction forces between probe and sample, different SPM techniques allow mapping of different surface properties. In this work, scanning tunneling microscopy (STM) in air and under electrochemical conditions (EC-STM), atomic force microscopy (AFM) in air and scanning electrochemical potential microscopy (SECPM) under electrochemical conditions, were used to study different single crystalline surfaces in electrochemistry. Especially SECPM offers potentially new insights into the solid-liquid interface by providing the possibility to image the potential distribution of the surface, with a resolution that is comparable to STM. In electrocatalysis, nanostructured catalysts supported on different electrode materials often show behavior different from their bulk electrodes. This was experimentally and theoretically shown for several combinations and recently on Pt on Au(111) towards fuel cell relevant reactions. For these investigations single crystals often provide accurate and well defined reference and support systems. We will show heteroepitaxially grown Ru, Ir and Rh single crystalline surface films and bulk Au single crystals with different orientations under electrochemical conditions. Image studies from all three different SPM methods will be presented and compared to electrochemical data obtained by cyclic voltammetry in acidic media. The quality of the single crystalline supports will be verified by the SPM images and the cyclic voltammograms. Furthermore, an outlook will be presented on how such supports can be used in electrocatalytic studies.

How does graphene grow? Easy access to well-ordered graphene films.

The selective formation of large-scale graphene layers on a Rh-YSZ-Si(111) multilayer substrate by a surface-induced chemical growth mechanism is investigated using low-energy electron diffraction, X-ray photoelectron spectroscopy, X-ray photoelectron diffraction, and scanning tunneling microscopy. It is shown that well-ordered graphene layers can be grown using simple and controllable procedures. In addition, temperature-dependent experiments provide insight into the details of the growth mechanisms. A comparison of different precursors shows that a mobile dicarbon species (e.g., C(2)H(2) or C(2)) acts as a common intermediate for graphene formation. These new approaches offer scalable methods for the large-scale production of high-quality graphene layers on silicon-based multilayer substrates.