Direct evidence of correlation between the second harmonic generation anisotropy patterns and the polarization orientation of perovskite ferroelectric.

For ferroelectric materials, where the polar state breaks the inversion symmetry, second harmonic generation is a useful tool to prove their ferroelectric properties. However, the correlation between the anisotropy patterns and the polarization orientation of the ferroelectric domains has not been clarified yet. In this work, we systematically investigated this correlation in a typical perovskite oxide ferroelectric, Barium Titanate (BaTiO3) crystal, by second harmonic generation and the piezoresponse force microscopy technique. The evolution of polarization-dependent anisotropy patterns proves that there is a linear relationship between the rotation angle of second harmonic generation anisotropy patterns and the polarization angle of BaTiO3 single crystals. It is a direct evidence illustrating that the polarization of BaTiO3 crystal can be qualitatively identified in 0°-180° by second harmonic generation technology. This work gives a glance at improving a nonintrusive and convenient method to identify the polarization of perovskite ferroelectric materials.

Evolution of structural distortion in BiFeO3 thin films probed by second-harmonic generation.

BiFeO3 thin films have drawn much attention due to its potential applications for novel magnetoelectric devices and fundamental physics in magnetoelectric coupling. However, the structural evolution of BiFeO3 films with thickness remains controversial. Here we use an optical second-harmonic generation technique to explore the phase-related symmetry evolution of BiFeO3 thin films with the variation of thickness. The crystalline structures for 60 and 180-nm-thick BiFeO3 thin films were characterized by high-resolution X-ray diffractometry reciprocal space mapping and the local piezoelectric response for 60-nm-thick BiFeO3 thin films was characterized by piezoresponse force microscopy. The present results show that the symmetry of BiFeO3 thin films with a thickness below 60 nm belongs to the point group 4 mm. We conclude that the disappearance of fourfold rotational symmetry in SHG s-out pattern implies for the appearance of R-phase. The fact that the thinner the film is, the closer to 1 the tensor element ratio χ31/χ15 tends, indicates an increase of symmetry with the decrease of thickness for BiFeO3 thin films.

Toward Switchable Photovoltaic Effect via Tailoring Mobile Oxygen Vacancies in Perovskite Oxide Films.

The defect chemistry of perovskite oxides involves the cause to most of their abundant functional properties, including interface magnetism, charge transport, ionic exchange, and catalytic activity. The possibility to achieve dynamic control over oxygen anion vacancies offers a unique opportunity for the development of appealing switchable devices, which at present are commonly based on ferroelectric materials. Herein, we report the discovery of a switchable photovoltaic effect, that the sign of the open voltage and the short circuit current can be reversed by inverting the polarity of the applied field, upon electrically tailoring the distribution of oxygen vacancies in perovskite oxide films. This phenomenon is demonstrated in lateral photovoltaic devices based on both ferroelectric BiFeO3 and paraelectric SrTiO3 films, under a reversed applied field whose magnitude is much smaller than the coercivity value of BiFeO3. The migration of oxygen vacancies was directly observed by employing an advanced annular bright-field scanning transmission electron microscopy technique with in situ biasing equipment. We conclude that the band bending induced by the motion of oxygen vacancies is the driving force for the reversible switching between two photovoltaic states. The present work can provide an active path for the design of novel switchable photovoltaic devices with a wide range of transition metal oxides in terms of the ionic degrees of freedom.

A new non-destructive readout by using photo-recovered surface potential contrast.

Ferroelectric random access memory is still challenging in the feature of combination of room temperature stability, non-destructive readout and high intensity storage. As a non-contact and non-destructive information readout method, surface potential has never been paid enough attention because of the unavoidable decay of the surface potential contrast between oppositely polarized domains. That is mainly due to the recombination of the surface movable charges around the domain walls. Here, by introducing a laser beam into the combination of piezoresponse force microscopy and Kelvin probe force microscopy, we demonstrate that the surface potential contrast of BiFeO3 films can be recovered under light illumination. The recovering mechanism is understood based on the redistribution of the photo-induced charges driven by the internal electric field. Furthermore, we have created a 12-cell memory pattern based on BiFeO3 films to show the feasibility of such photo-assisted non-volatile and non-destructive readout of the ferroelectric memory.