Farming on the Ocean via Desalination (FOOD).

Today, agricultural irrigation consumes the largest amount of freshwater globally, while humans are threatened by water scarcity. To eliminate the trade-off between hunger and thirst, here, we show off-grid maritime agriculture based on a floating solar-driven agro-desalination wooden dome. In this dome, part of the visible light is transmitted for photosynthesis, and the remaining solar energy drives solar desalination, providing enough water (>4 mm day-1) for irrigation. Based on this water-food synergy, the stages of germination and growth are demonstrated. This technology can, to a large extent, support food security and sustainable agriculture and, in principle, be used to create self-circulation systems at sea to help humans survive weather extremes such as floods and droughts.

An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics.

Avalanche and surge robustness involve fundamental carrier dynamics under high electric field and current density. They are also prerequisites of any power device to survive common overvoltage and overcurrent stresses in power electronics applications such as electric vehicles, electricity grids, and renewable energy processing. Despite tremendous efforts to develop the next-generation power devices using emerging ultra-wide bandgap semiconductors, the lack of effective bipolar doping has been a daunting obstacle for achieving the necessary robustness in these devices. Here we report avalanche and surge robustness in a heterojunction formed between the ultra-wide bandgap n-type gallium oxide and the wide-bandgap p-type nickel oxide. Under 1500 V reverse bias, impact ionization initiates in gallium oxide, and the staggered band alignment favors efficient hole removal, enabling a high avalanche current over 50 A. Under forward bias, bipolar conductivity modulation enables the junction to survive over 50 A surge current. Moreover, the asymmetric carrier lifetime makes the high-level carrier injection dominant in nickel oxide, enabling a fast reverse recovery within 15 ns. This heterojunction breaks the fundamental trade-off between robustness and switching speed in conventional homojunctions and removes a key hurdle to advance ultra-wide bandgap semiconductor devices for power industrial applications.

A comparative study of interfacial thermal conductance between metal and semiconductor.

To understand and control thermal conductance of interface between metal and semiconductor has now become a crucial task for the thermal design and management of nano-electronic and micro-electronic devices. The interfacial alignments and electronic characteristics of the interfaces between metal and semiconductor are studied using a first-principles calculation based on hybrid density functional theory. The thermal conductance of interfaces between metal and semiconductor were calculated and analyzed using diffuse mismatch model, acoustic mismatch model and nonequilibrium molecular dynamics methods. Especially, according to nonequilibrium molecular dynamics, the values of thermal conductance were obtained to be 32.55 MW m-2 K-1 and 341.87 MW m-2 K-1 at C-Cu and Si-Cu interfaces, respectively. These results of theoretical simulation calculations are basically consistent with the current experimental data, which indicates that phonon-phonon interaction play a more important role than electron-phonon interaction during heat transport. It may be effective way to improve the interfacial thermal conductance through enhancing the interface coupling strength at the metal-semiconductor interface because the strong interfacial scattering plays a role in suppressing in the weaker interface coupling heterostructure, leading to the lower thermal conductance of interfaces. This could provide a beneficial reference for the design of the Schottky diode and thermal management at the interfaces between metal and semiconductor.

Enhanced Contactless Salt-Collecting Solar Desalination.

Solar desalination is expected to solve the problem of global water shortage. Yet its stability is plagued by salt accumulation. Here, a paper-based thermal radiation-enabled evaporation system (TREES) is demonstrated to achieve sustainable and highly efficient salt-collecting desalination, featuring a dynamic evaporation front based on the accumulated salt layer where water serves as its own absorber via energy down-conversion. When processing 7 wt % brine, it continuously evaporates water at a high rate─2.25 L m-2 h-1 under 1 sun illumination─which is well beyond the input solar energy limit for over 366 h. It is revealed that such enhanced evaporation arises from the unique vertical evaporation wall of the paper-TREES, which captures the thermal energy from the heated bottom efficiently and gains extra energy from the warmer environment. These findings provide novel insights into the design of next-generation salt-harvesting solar evaporators and take a step further to advance their applications in green desalination.

Identification and Suppression of Majority Surface States in the Dry-Etched ß-Ga2O3.

Surface treatment after dry etching is vital to enhance the surface quality of the material and thus improve device performance. In this Letter, we identified the majority surface states induced by the dry etching of ß-Ga2O3 and optimized surface treatments to suppress these electrically active defects with the improved performance of Schottky barrier diodes. Transient spectroscopies suggested that the majority traps (EC-0.75 eV) related to divacancies (VGa-VO) were enhanced in the concentration of 3.37 × 1014 cm-3 by dry etching and reduced to 0.90 × 1014 cm-3 by the combined means of oxygen annealing and piranha solution treatment. The trap evolution is supported by the suppressed donor-acceptor pair radiative recombination related to oxygen vacancies, the improved carrier transport (negligible hysteresis current-voltage and unity ideality factor), and the reduced surface band bending. These findings provide a straightforward strategy to improve surface quality for the further performance improvement of Ga2O3 power diodes.

Solution for Mass Production of High-Throughput Digital Microfluidic Chip Based on a-Si TFT with In-Pixel Boost Circuit.

As one of the most popular research hotspot of lab-on-chip, digital microfluidic (DMF) technology based on the principle of electrowetting has unique advantages of high-precision, low cost and programmable control. However, due to the limitation of electrodes number, the throughput is hard to further upgrade. Therefore, active matrix electrowetting-on-dielectric (AM-EWOD) technology is a solution to acquire larger scale of driving electrodes. However, the process of manufacturing of AM-EWOD based on thin-film-transistor (TFT) is complex and expensive. Besides, the driving voltage of DMF chip is usually much higher than that of common display products.In this paper, a solution for mass production of AM-EWOD based on amorphous silicon (a-Si) is provided. Samples of 32 × 32 matrix AM-EWOD chips was designed and manufactured. A boost circuit was integrated into the pixel, which can raise the pixel voltage up by about 50%. Customized designed Printed Circuit Board (PCB) was used to supply the timing signals and driving voltage to make the motion of droplets programmable. The process of moving, mixing and generation of droplets was demonstrated.The minimum voltage in need was about 20 V and a velocity of up to 96 mm/s was achieved. Such an DMF device with large-scale matrix and low driving voltage will be very suitable for POCT applications.

Sustainable Solar Evaporation while Salt Accumulation.

Solar-driven water evaporation, as a cost-effective and eco-friendly way to produce high-quality freshwater from saline water, is a burgeoning and promising force in the battle against global thirst. However, unsustainable vapor generation caused by salt accumulation has always plagued researchers. Here, it is revealed that a solar thermal photo vapor generator (STPV), which utilizes infrared photons as a heat source, can evaporate water stably in the presence of salt accumulation. Thanks to the low reflection of the wet salt in the infrared band and the porous structure of the salt layer, the energy can be used effectively and the vapor escapes without hindrance. The STPV evaporates water at a stable rate of 1.04-1.19 kg m-2 h-1 under 2 sun illumination for 8 h in a highly concentrated sea salt solution (20 wt %). In contrast, the evaporation rate of conventional solar thermal vapor generators (STVs) decreased by >50% in 1 h and ≈70% in 8 h. This finding could inspire the future development of more advanced solar evaporators so as to ease the global water scarcity.

Sustainable Solar Evaporation from Solute Surface via Energy Downconversion.

Solar-powered interfacial evaporation, a cost-effective and ecofriendly way to obtain freshwater from contaminated water, provides a promising path to ease the global water crisis. However, solute accumulation has severely impacted efficient light-to-heat-to-vapor generation in conventional solar evaporators. Here, it is demonstrated that an interfacial solar thermal photo-vapor generator is an efficient light-to-heat photo-vapor generator that can evaporate water stably in the presence of solute accumulation. An energy downconversion strategy which shifts sunlight energy from visible-near infrared to mid infrared-far infrared bands turns water from transparent to its own absorber, thus changing the fixed evaporation surface (black absorber) in a traditional solar evaporator to a dynamic front (solute surface). Light reflected from the solute can be recycled to drive evaporation. The prototype evaporator can evaporate at a high speed of 1.94 kg m-2 h-1 during a persistent solute accumulation process for 32 h. Such an ability to produce purified water while recycle valuable heavy metals from waste water containing heavy metal ions can inspire more advanced solar-driven water treatment devices.

Carbonized Tree-Like Furry Magnolia Fruit-Based Evaporator Replicating the Feat of Plant Transpiration.

It has long been an aspirational goal to create artificial evaporators that allow omnidirectional energy absorptance, adequate water supply, and fast vapor transportation, replicating the feat of plant transpiration, to solve the global water crisis. This work reveals that magnolia fruits, as a kind of tree-like living organism, can be outstanding 3D tree-like evaporators through a simple carbonization process. The arterial pumping, branched diffusion, and confined evaporation are achieved by the "trunk," "branches," and "leaves," respectively, of the mini tree. The mini tree possesses omnidirectional high light absorptance with minimized heat loss and gains energy from the environment. Water confined in the fruit possesses reduced vaporization enthalpy and transports quickly following the Murray's law. A record-high vapor generation rate of 1.22 kg m-2 h-1 in dark and 3.15 kg m-2 h-1 under 1 sun illumination is achieved under the assistance of the gully-like furry surface. The "absorption of nutrients" enables the fruit to recover valuable heavy metals as well as to produce clean water from wastewater efficiently. These findings not only reveal the hidden talent of magnolia fruits as cheap materials for vapor generation but also inspire future development of high-performance, full-time, and all-weather vapor generation and water treatment devices.

Highly Narrow-Band Polarization-Sensitive Solar-Blind Photodetectors Based on ß-Ga2O3 Single Crystals.

To suppress noise from full daylight background or environmental radiation, a spectrally selective solar-blind photodetector is widely required in many applications that need detection of light within a specific spectral range. Here, we present highly narrow-band solar-blind photodetectors by light polarization engineering of the anisotropic transitions in ß-Ga2O3 single crystals. The polarized transmittance characteristics reveal that direct transitions from valance subbands to the conduction band minimum are tuned between 4.53 and 4.76 eV for the light polarized E// c and E// b. The polarization-dependent photoresponsivity verifies that the order of fundamental band-to-band transitions obeys well the selection rules in terms of the valence-band splitting in the ß-Ga2O3 monoclinic crystal band structure. By combining an orthogonally aligned identical ß-Ga2O3 (100) single crystal filter with a detector measured at a chopper frequency of 17 Hz, a highly narrow-band detection is produced with a peak responsivity of 0.23 A/W at 262 nm, an EQE of 110%, a bandwidth of 10 nm, a light rejection ratio over 800, and a response time of 0.86 ms. This provides a new paradigm for a narrow-band solar-blind photodetector with broad applications where background noise emission needs to be suppressed.

Toward facile broadband photodetectors based on self-assembled ZnO nanobridge/rubrene heterointerface.

ZnO nanowire photodetectors have attracted much attention due to their excellent optoelectronic performance. However, operating speed remains a challenge, and scalability is also impeded by uncontrolled transfer methods and sophisticated fabrication process. In this paper, we have fabricated an excellent ZnO nanobridge ultraviolet photodetector array by using a simple one-step method. The faster photoresponse speed and a broader response wavelength (from UV to visible range) have been achieved by constructing a type-II ZnO/rubrene heterointerface. Performance enhancement is believed to arise from the well-matching band alignment and highly efficient separation of photogenerated electron-hole pairs at the heterointerface. Our strategy provides a simple and promising route to develop cost-effective and highly sensitive UV-vis photodetectors.

First-principles insights on the electronic and optical properties of ZnO@CNT core@shell nanostructure.

In recent years, various kinds of ZnO-based core@shell nanomaterials have been paid much attention due to their widespread applications in the fields of physics, chemistry and energy conversion. In this work, the electronic and optical properties of a new type of ZnO-based one-dimensional core@shell nanostructure, which is composed of inner ZnO nanowire and outer carbon nanotube (CNT), is calculated based on the first-principles density functional theory (DFT). Calculation results suggest that the ZnO nanowire encapsulated in (9, 9)-CNT is the most stable structure from the view of formation energy. The interaction between the inner ZnO nanowire and the outer (9, 9) CNT belongs to a weak van der Waals type. The complex structure is found to possess metallicity for the outer (9, 9) CNT and maintain the wide band gap nature for the inner ZnO nanowire. Under the different external strains, the charge redistribution between inner ZnO nanowire and outer CNT caused by electron tunneling leads to the shift of Dirac point and the band narrowing of inner ZnO nanowire. The inner ZnO nanowire only has light absorption in the UV region, which is consistent with its optical property originating from its wide bandgap nature.

Tailored Emission Properties of ZnTe/ZnTe:O/ZnO Core-Shell Nanowires Coupled with an Al Plasmonic Bowtie Antenna Array.

The ability to manipulate light-matter interaction in semiconducting nanostructures is fascinating for implementing functionalities in advanced optoelectronic devices. Here, we report the tailoring of radiative emissions in a ZnTe/ZnTe:O/ZnO core-shell single nanowire coupled with a one-dimensional aluminum bowtie antenna array. The plasmonic antenna enables changes in the excitation and emission processes, leading to an obvious enhancement of near band edge emission (2.2 eV) and subgap excitonic emission (1.7 eV) bound to intermediate band states in a ZnTe/ZnTe:O/ZnO core-shell nanowire as well as surface-enhanced Raman scattering at room temperature. The increase of emission decay rate in the nanowire/antenna system, probed by time-resolved photoluminescence spectroscopy, yields an observable enhancement of quantum efficiency induced by local surface plasmon resonance. Electromagnetic simulations agree well with the experimental observations, revealing a combined effect of enhanced electric near-field intensity and the improvement of quantum efficiency in the ZnTe/ZnTe:O/ZnO nanowire/antenna system. The capability of tailoring light-matter interaction in low-efficient emitters may provide an alternative platform for designing advanced optoelectronic and sensing devices with precisely controlled response.

Photo-assisted hysteresis of electronic transport for ZnO nanowire transistors.

Recently, ZnO nanowire field effect transistors (FETs) have received renewed interest due to their extraordinary low dimensionality and high sensitivity to external chemical environments and illumination conditions. These prominent properties have promising potential in nanoscale chemical and photo-sensors. In this article, we have fabricated ZnO nanowire FETs and have found hysteresis behavior in their transfer characteristics. The mechanism and dynamics of the hysteresis phenomena have been investigated in detail by varying the sweeping rate and range of the gate bias with and without light irradiation. Significantly, light irradiation is of great importance on charge trapping by regulating adsorption and desorption of oxygen at the interface of ZnO/SiO2. Carriers excited by light irradiation can dramatically promote trapping/detrapping processes. With the assistance of light illumination, we have demonstrated a photon-assisted nonvolatile memory which employs the ZnO nanowire FET. The device exhibits reliable programming/erasing operations and a large on/off ratio. The proposed proto-type memory has thus provided a possible novel path for creating a memory functionality to other low-dimensional material systems.

Low-threshold ultraviolet stimulated emissions from large-sized single crystalline ZnO transferable membranes.

Wide-bandgap inorganic semiconductors based ultraviolet lasers bring versatile applications with significant advantages including low-power consumption, high-power output, robustness and long-term operation stability. However, flexible membrane lasers remain challenging predominantly due to the need for a lattice matched supporting substrate. Here, we develop a simple laser liftoff process to make freestanding single crystalline ZnO membranes that demonstrate low-threshold ultraviolet stimulated emissions together with large sized dimension (> 2 mm), ultralow-weight (m/A<15 g/m2) and excellent flexibility. The 2.6 µm-thick crack-free ZnO membrane exhibits well-retained single crystallinity and enhanced excitonic emissions while the defect-related emissions are completely suppressed. The inelastic exciton-exciton scattering stimulated emissions with increased spontaneous emission rate is obtained with a reduced threshold of 0.35 MW/cm2 in the ZnO membrane transferred onto a flexible polyethylene naphthalate substrate. Theoretical simulations reveal that it is a synergetic effect of the increased quantum efficiency via Purcell effect and the improved optical gain due to vertical directional waveguiding of the membrane, which functions as a Fabry-Perot photonic resonator due to the refractive index contrast at ZnO-air boundaries. With simple architecture, efficient exciton recombination and easy fusion with waveguide system, the ZnO membranes provide an alternative platform to develop compact low-threshold ultraviolet excitonic lasers.

Solar-Blind Photodetector with High Avalanche Gains and Bias-Tunable Detecting Functionality Based on Metastable Phase α-Ga2O3/ZnO Isotype Heterostructures.

The metastable α-phase Ga2O3 is an emerging material for developing solar-blind photodetectors and power electronic devices toward civil and military applications. Despite its superior physical properties, the high quality epitaxy of metastable phase α-Ga2O3 remains challenging. To this end, single crystalline α-Ga2O3 epilayers are achieved on nonpolar ZnO (112̅0) substrates for the first time and a high performance Au/α-Ga2O3/ZnO isotype heterostructure-based Schottky barrier avalanche diode is demonstrated. The device exhibits self-powered functions with a dark current lower than 1 pA, a UV/visible rejection ratio of 103 and a detectivity of 9.66 × 1012 cm Hz1/2 W-1. Dual responsivity bands with cutoff wavelengths at 255 and 375 nm are observed with their peak responsivities of 0.50 and 0.071 A W-1 at -5 V, respectively. High photoconductive gain at low bias is governed by a barrier lowing effect at the Au/Ga2O3 and Ga2O3/ZnO heterointerfaces. The device also allows avalanche multiplication processes initiated by pure electron and hole injections under different illumination conditions. High avalanche gains over 103 and a low ionization coefficient ratio of electrons and holes are yielded, leading to a total gain over 105 and a high responsivity of 1.10 × 104 A W-1. Such avalanche heterostructures with ultrahigh gains and bias-tunable UV detecting functionality hold promise for developing high performance solar-blind photodetectors.

Extreme absorption enhancement in ZnTe:O/ZnO intermediate band core-shell nanowires by interplay of dielectric resonance and plasmonic bowtie nanoantennas.

Intermediate band solar cells (IBSCs) are conceptual and promising for next generation high efficiency photovoltaic devices, whereas, IB impact on the cell performance is still marginal due to the weak absorption of IB states. Here a rational design of a hybrid structure composed of ZnTe:O/ZnO core-shell nanowires (NWs) with Al bowtie nanoantennas is demonstrated to exhibit strong ability in tuning and enhancing broadband light response. The optimized nanowire dimensions enable absorption enhancement by engineering leaky-mode dielectric resonances. It maximizes the overlap of the absorption spectrum and the optical transitions in ZnTe:O intermediate-band (IB) photovoltaic materials, as verified by the enhanced photoresponse especially for IB states in an individual nanowire device. Furthermore, by integrating Al bowtie antennas, the enhanced exciton-plasmon coupling enables the notable improvement in the absorption of ZnTe:O/ZnO core-shell single NW, which was demonstrated by the profound enhancement of photoluminescence and resonant Raman scattering. The marriage of dielectric and metallic resonance effects in subwavelength-scale nanowires opens up new avenues for overcoming the poor absorption of sub-gap photons by IB states in ZnTe:O to achieve high-efficiency IBSCs.

Distinct enhancement of sub-bandgap photoresponse through intermediate band in high dose implanted ZnTe:O alloys.

The demand for high efficiency intermediate band (IB) solar cells is driving efforts in producing high quality IB photovoltaic materials. Here, we demonstrate ZnTe:O highly mismatched alloys synthesized by high dose ion implantation and pulsed laser melting exhibiting optically active IB states and efficient sub-gap photoresponse, as well as investigate the effect of pulsed laser melting on the structural and optical recovery in detail. The structural evolution and vibrational dynamics indicates a significant structural recovery of ZnTe:O alloys by liquid phase epitaxy during pulsed laser melting process, but laser irradiation also aggravates the segregation of Te in ZnTe:O alloys. A distinct intermediate band located at 1.8 eV above valence band is optically activated as evidenced by photoluminescence, absorption and photoresponse characteristics. The carrier dynamics indicates that carriers in the IB electronic states have a relatively long lifetime, which is beneficial for the fast separation of carriers excited by photons with sub-gap energy and thus the improved overall conversion efficiency. The reproducible capability of implantation and laser annealing at selective area enable the realization of high efficient lateral junction solar cells, which can ensure extreme light trapping and efficient charge separation.

The Luminescent Inhomogeneity and the Distribution of Zinc Vacancy-Related Acceptor-Like Defects in N-Doped ZnO Microrods.

Vertically aligned N-doped ZnO microrods with a hexagonal symmetry were fabricated via the chemical vapor transport with abundant N2O as both O and N precursors. We have demonstrated the suppression of the zinc interstitial-related shallow donor defects and have identified the zinc vacancy-related shallow and deep acceptor states by temperature variable photoluminescence in O-rich growth environment. Through spatially resolved cathodoluminescence spectra, we found the luminescent inhomogeneity in the sample with a core-shell structure. The deep acceptor-isolated VZn and the shallow acceptor VZn-related complex or clusters mainly distribute in the shell region.

Spin-polarized wide electron slabs in functionally graded polar oxide heterostructures.

We report on the high mobility wide electron slabs with enhanced correlation effects by tailoring the polarization effects in a functionally graded ZnMgO/ZnO heterostructures. The characteristics of three-dimensional (3D) spreading electrons are evidenced by the capacitance-voltage profiling and the quantization of 3D Fermi surface in magneto-transport measurements. Despite the weak spin-orbit interaction, such electron slabs are spin-polarized with a large zero-field spin splitting energy, which is induced by the carrier-mediated ferromagnetism. Our results suggest that the vast majority of electrons are localized at the surface magnetic moment which does not allow spin manipulations, and only in the region visited by the itinerant carriers that the ferromagnetic exchange interactions via coupling to the surface local moments contribute to the spin transport. The host ferromagnetism is likely due to the formation of Zn cation vacancies on the surface regime induced by the stabilization mechanism and strain-relaxation in ZnMgO polar ionic surface.