ABSTRACT
The relation between crystal symmetries, electron correlations and electronic structure steers the formation of a large array of unconventional phases of matter, including magneto-electric loop currents and chiral magnetism1-6. The detection of such hidden orders is an important goal in condensed-matter physics. However, until now, non-standard forms of magnetism with chiral electronic ordering have been difficult to detect experimentally7. Here we develop a theory for symmetry-broken chiral ground states and propose a methodology based on circularly polarized, spin-selective, angular-resolved photoelectron spectroscopy to study them. We use the archetypal quantum material Sr2RuO4 and reveal spectroscopic signatures that, despite being subtle, can be reconciled with the formation of spin-orbital chiral currents at the surface of the material8-10. As we shed light on these chiral regimes, our findings pave the way for a deeper understanding of ordering phenomena and unconventional magnetism.
ABSTRACT
Point-contact spectroscopy was performed on bulk samples of electron-doped high temperature superconductor Nd2-xCexCuO4-δ. The samples were characterized using X-ray diffraction and scanning electron microscopy equipped with a wavelength-dispersive spectrometer and an electron backscatter diffraction detector. Samples with Ce content x = 0.15 showed the absence of spurious phases and randomly oriented grains, most of which had dimensions of approximately 220 µm2. The low-bias spectra in the tunneling regime, i.e., high-transparency interface, exhibited a gap feature at about ±5 meV and no zero-bias conductance, despite the random oriented grains investigated within our bulk samples, consistent with most of the literature data on oriented samples. High-bias conductance was also measured in order to obtain information on the properties of the barrier. A V-shape was observed in some cases, instead of the parabolic behavior expected for tunnel junctions.
ABSTRACT
The ability to form freestanding oxide membranes of nanoscale thickness is of great interest for enabling material functionality and for integrating oxides in flexible electronic and photonic technologies. Recently, a route has been demonstrated for forming conducting heterostructure membranes of LaAlO3 and SrTiO3, the canonical system for oxide electronics. In this route, the epitaxial growth of LaAlO3 on SrTiO3 resulted in a strained state that relaxed by producing freestanding membranes with random sizes and locations. Here, we extend the method to enable self-formed LaAlO3/SrTiO3 micromembranes with control over membrane position, their lateral sizes from 2 to 20 µm, and with controlled transfer to other substrates of choice. This method opens up the possibility to study and use the two-dimensional electron gas in LaAlO3/SrTiO3 membranes for advanced device concepts.
