ABSTRACT
The structure of the title compound, barium lanthanum bromide (11/4/34), can be derived from the fluorite structure. The asymmetric unit contains two Ba sites (one with site symmetry 4/m..), one La site (site symmetry 4..), one mixed-occupied Ba and La site (ratio 1:1, site symmetry m..) and six Br sites (one with site symmetry \=4.., one with 2.., one with m.., the latter being disordered over two positions with a 0.86:0.14 ratio). The fundamental building units of the structure are edge-sharing polyhedral clusters made up of Ba and La bromide clusters inter-connected to BaBr(8) square prisms and BaBr(10) groups.
ABSTRACT
Single crystals of Ba(0.96)Eu(0.04)BrI (barium europium bromide iodide) were grown by the Bridgman technique. The title compound adopts the ordered PbCl(2) structure [Braekken (1932 â¶). Z. Kristallogr.83, 222-282]. All atoms occupy the fourfold special positions (4c, site symmetry m) of the space group Pnma with a statistical distribution of Ba and Eu. They lie on the mirror planes, perpendicular to the b axis at y = ±0.25. Each cation is coordinated by nine anions in a tricapped trigonal prismatic arrangement.
ABSTRACT
High-pressure structural behavior of silicon nanowires is investigated up to approximately 22 GPa using angle dispersive X-ray diffraction measurements. Silicon nanowires transform from the cubic to the beta-tin phase at 7.5-10.5 GPa, to the Imma phase at approximately 14 GPa, and to the primitive hexagonal structure at approximately 16.2 GPa. On complete release of pressure, it transforms to the metastable R8 phase. The observed sequence of phase transitions is the same as that of bulk silicon. Though the X-ray diffraction experiments do not reveal any size effect, the pressure dependence of Raman modes shows that the behavior of nanowires is in between that of the bulk crystal and porous Si.
Subject(s)
Crystallization/methods , Electric Wiring , Nanotechnology/methods , Nanotubes/chemistry , Nanotubes/ultrastructure , Silicon/chemistry , Crystallography , Materials Testing , Molecular Conformation , Phase Transition , Pressure , Silicon/analysisABSTRACT
Germanium oxide (GeO2) nanowires have been prepared by heating a mixture of Ge powder and carbon in an Ar + O2 mixture at 900 degrees C. The nanowires have been characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and spectroscopic measurements. The nanowires are single crystalline with diameters in the 15-250-nm range. They exhibit characteristic blue luminescence.
