ABSTRACT
Water soluble poly(1-vinyl-1,2,4-triazole) (PVT) as a novel dielectric layer for organic field effect transistor is studied. Dielectric spectroscopy characterization reveals it has low leakage current and rather high breakdown voltage. Both n-channel and p-channel organic field effect transistors are fabricated using pentacene and fullerene as active layers. Both devices show device performances with lack of hysteresis, very low threshold voltages and high on/off ratios. Excellent film formation property is utilized to make AlO x and thin PVT bilayer in order to decrease the operating voltage of the devices. All solution processed ambipolar device is fabricated with simple spin coating steps using poly(2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylenevinylene) (MEH-PPV) end capped with polyhedral oligomeric silsesquioxanes (POSS) as active layer. Our investigations show that PVT can be a very promising dielectric for organic field effect transistors.
