Liquid-Metal-Assisted Synthesis of Patterned GaN Thin Films for High-Performance UV Photodetectors Array.

GaN's outstanding physical characteristics allow for a wide range of applications in numerous industries. Although individual GaN-based ultraviolet (UV) photodetectors are the subject of in-depth research in recent decades, the demand for photodetectors array is rising as a result of advances in optoelectronic integration technology. However, as a prerequisite for constructing GaN-based photodetectors array, large-area, patterned synthesis of GaN thin films remains a certain challenge. This work presents a facile technique for pattern growing high-quality GaN thin films for the assembly of an array of high-performance UV photodetectors. This technique uses UV lithography, which is not only very compatible with common semiconductor manufacturing techniques, but also enables precise patterning modification. A typical detector has impressive photo-response performance under 365 nm irradiation, with an extremely low dark current of 40 pA, a high Ilight /Idark ratio over 105 , a high responsivity of 4.23 AW-1 , and a decent specific detectivity of 1.76 × 1012 Jones. Additional optoelectronic studies demonstrate the strong homogeneity and repeatability of the photodetectors array, enabling it to serve as a reliable UV image sensor with enough spatial resolution. These outcomes highlight the proposed patterning technique's enormous potential.

Mesitylated trityl radicals, a platform for doublet emission: symmetry breaking, charge-transfer states and conjugated polymers.

Neutral π-radicals have potential for use as light emitters in optoelectronic devices due to the absence of energetically low-lying non-emissive states. Here, we report a defect-free synthetic methodology via mesityl substitution at the para-positions of tris(2,4,6-trichlorophenyl)methyl radical. These materials reveal a number of novel optoelectronic properties. Firstly, mesityl substituted radicals show strongly enhanced photoluminescence arising from symmetry breaking in the excited state. Secondly, photoexcitation of thin films of 8 wt% radical in 4,4'-bis(carbazol-9-yl)-1,1'-biphenyl host matrix produces long lived (in the order of microseconds) intermolecular charge transfer states, following hole transfer to the host, that can show unexpectedly efficient red-shifted emission. Thirdly, covalent attachment of carbazole into the mesitylated radical gives very high photoluminescence yield of 93% in 4,4'-bis(carbazol-9-yl)-1,1'-biphenyl films and light-emitting diodes with maximum external quantum efficiency of 28% at a wavelength of 689 nm. Fourthly, a main-chain copolymer of the mesitylated radical and 9,9-dioctyl-9H-fluorene shows red-shifted emission beyond 800 nm.

Highly efficient modulation doping: A path toward superior organic thermoelectric devices.

We investigate the charge and thermoelectric transport in modulation-doped large-area rubrene thin-film crystals with different crystal phases. We show that modulation doping allows achieving superior doping efficiencies even for high doping densities, when conventional bulk doping runs into the reserve regime. Modulation-doped orthorhombic rubrene achieves much improved thermoelectric power factors, exceeding 20 µW m-1 K-2 at 80°C. Theoretical studies give insight into the energy landscape of the heterostructures and its influence on qualitative trends of the Seebeck coefficient. Our results show that modulation doping together with high-mobility crystalline organic semiconductor films is a previosly unexplored strategy for achieving high-performance organic thermoelectrics.

Miniaturized VIS-NIR Spectrometers Based on Narrowband and Tunable Transmission Cavity Organic Photodetectors with Ultrahigh Specific Detectivity above 1014 Jones.

Spectroscopic photodetection plays a key role in many emerging applications such as context-aware optical sensing, wearable biometric monitoring, and biomedical imaging. Photodetectors based on organic semiconductors open many new possibilities in this field. However, ease of processing, tailorable optoelectronic properties, and sensitivity for faint light are still significant challenges. Here, the authors report a novel concept for a tunable spectral detector by combining an innovative transmission cavity structure with organic absorbers to yield narrowband organic photodetection in the wavelength range of 400-1100 nm, fabricated in a full-vacuum process. Benefiting from this strategy, one of the best performed narrowband organic photodetectors is achieved with a finely wavelength-selective photoresponse (full-width-at-half-maximum of ≈40 nm), ultrahigh specific detectivity above 1014 Jones, the maximum response speed of 555 kHz, and a large dynamic range up to 168 dB. Particularly, an array of transmission cavity organic photodetectors is monolithically integrated on a small substrate to showcase a miniaturized spectrometer application, and a true proof-of-concept transmission spectrum measurement is successfully demonstrated. The excellent performance, the simple device fabrication as well as the possibility of high integration of this new concept challenge state-of-the-art low-noise silicon photodetectors and will mature the spectroscopic photodetection into technological realities.

Efficient and low-voltage vertical organic permeable base light-emitting transistors.

Organic light-emitting transistors, three-terminal devices combining a thin-film transistor with a light-emitting diode, have generated increasing interest in organic electronics. However, increasing their efficiency while keeping the operating voltage low still remains a key challenge. Here, we demonstrate organic permeable base light-emitting transistors; these three-terminal vertical optoelectronic devices operate at driving voltages below 5.0 V; emit in the red, green and blue ranges; and reach, respectively, peak external quantum efficiencies of 19.6%, 24.6% and 11.8%, current efficiencies of 20.6 cd A-1, 90.1 cd A-1 and 27.1 cd A-1 and maximum luminance values of 9,833 cd m-2, 12,513 cd m-2 and 4,753 cd m-2. Our simulations demonstrate that the nano-pore permeable base electrode located at the centre of the device, which forms a distinctive optical microcavity and regulates charge carrier injection and transport, is the key to the good performance obtained. Our work paves the way towards efficient and low-voltage organic light-emitting transistors, useful for power-efficient active matrix displays and solid-state lighting.

Vertical organic permeable dual-base transistors for logic circuits.

The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of <2.0 V. We believe that this work offers a compact and technologically simple hardware platform with excellent application potential for vertical-channel organic transistors in complex logic circuits.

Organic Thin-Film Red-Light Photodiodes with Tunable Spectral Response Via Selective Exciton Activation.

Red and near-infrared light detection is vital for numerous applications, including full-color imaging, optical communication, and machine vision. However, this development is hindered by a limited choice of small band gap and narrow-bandwidth materials. Here, we report a device principle with a simple organic planar heterojunction architecture that enables a selective activation of excitons for tuning the photoresponse spectra to fabricate thin-film, filterless, red-light organic photodiodes. A sequential solution-processed active layer is formed by depositing the top layer of PC71BM onto the predeposited bottom layer of doped P3HT. By adjusting the ratio of PTB7 in P3HT, an improved responsivity and a red-shift of the photoresponse peak from 645 to 745 nm are demonstrated simultaneously. Furthermore, the responsivity of 745 nm is enhanced over 5 times with a narrow full width at half-maximum of ∼50 nm at optimized doping ratio compared to the pristine PTB7 device. As a result, a high specific detectivity in excess of 1012 Jones and broad linear dynamic range of 103 dB are achieved. This design concept shows the possibility of realizing tunable red-light selectivity even at relatively thin-film thickness, which is intriguing for the implementation of high-resolution image sensors in the near future.

Vertical Organic Thin-Film Transistors with an Anodized Permeable Base for Very Low Leakage Current.

The organic permeable base transistor (OPBT) is currently the fastest organic transistor with a transition frequency of 40 MHz. It relies on a thin aluminum base electrode to control the transistor current. This electrode is surrounded by a native oxide layer for passivation, currently created by oxidation in air. However, this process is not reliable and leads to large performance variations between samples, slow production, and relatively high leakage currents. Here, for the first time it is demonstrated that electrochemical anodization can be conveniently employed for the fabrication of high-performance OPBTs with vastly reduced leakage currents and more controlled process parameters. Very large transmission factors of 99.9996% are achieved, while excellent on/off ratios of 5 × 105 and high on-currents greater than 300 mA cm-2 show that the C60 semiconductor layer can withstand the electrochemical anodization. These results make anodization an intriguing option for innovative organic transistor design.

Electrical Transport Properties of Au Nanoparticles and Thin Films on Ge Probed Using a Conducting Atomic Force Microscope.

In this work, gold nanoparticles (Au NPs) were distributed on an n-Ge substrate using the colloidal NP deposition method to form Au NP/Ge Schottky diodes (SDs), and the current transport properties of these nano-SDs were studied. The current density-voltage (J-V) characteristics were measured on each nanometer-sized Au particle using a conducting atomic force microscope (C-AFM). These Au NP/Ge diodes showed a rectifying behavior. According to the thermionic emission (TE) model, the effective Schottky barrier height (SBH) and ideality factors n were obtained. The SBH for the Au NP/Ge diodes ranges from 0.22 to 0.30 eV and the ideality factor ranges from 3.8 to 8.6. The current density and the barrier height increase while the ideality factor decreases with increasing Au NP diameters. This indicates that the tunneling effect is enhanced because of the narrowed depletion width and decreased size of the Au NP/Ge SDs. To compare the electrical behavior with Au NP/Ge diodes, the Au thin film/Ge diodes were also prepared and their SBHs were much larger because of the image-charge lowering effect and the tunneling effect in Au NP/Ge diodes.